Patents by Inventor Chien-Chung Jao

Chien-Chung Jao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8246765
    Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, forming a tin layer to cover the surface of the metal substrate, and treating the metal substrate covered the tin layer by an annealing process, wherein the annealing process is performed at 400° C.-600° C. and the surface of the tin layer is subsequently inhibited from growing tin whiskers.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: August 21, 2012
    Assignee: National Taiwan University of Science & Technology
    Inventors: Yee-Wen Yen, Meng-Yu Tsou, Chien-Chung Jao
  • Publication number: 20110094634
    Abstract: A method for inhibiting growth of tin whiskers is provided. The method includes providing a metal substrate, forming a tin layer to cover the surface of the metal substrate, and treating the metal substrate covered the tin layer by an annealing process, wherein the annealing process is performed at 400° C.-600° C. and the surface of the tin layer is subsequently inhibited from growing tin whiskers.
    Type: Application
    Filed: February 9, 2010
    Publication date: April 28, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY OF SCIENCE & TECHNOLOGY
    Inventors: Yee-Wen YEN, Meng-Yu TSOU, Chien-Chung JAO
  • Publication number: 20080166835
    Abstract: A method of bonding a solder ball and a base plate and a method of manufacturing a packaging structure using the same are provided. The method of bonding a solder ball and a base plate includes the following steps. First, a base plate including an electrode layer and a base material layer is provided. The electrode layer is disposed on the base material layer. Next, a barrier layer is formed on the electrode layer. Then, a metal layer is formed on the barrier layer. The thickness of the metal layer is about 10˜18 micrometers. Further, a solder ball is disposed on the metal layer. Afterwards, the solder ball, the metal layer, the barrier layer and the electrode layer are heated to a reacting temperature and kept for a holding time.
    Type: Application
    Filed: April 10, 2007
    Publication date: July 10, 2008
    Applicant: National Taiwan University of Science and Technology
    Inventors: Yee-Wen Yen, Hong-Yao Wei, Wei-Kai Liou, Chien-Chung Jao, Chia-Pyng Lee