Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: The present invention is an automated optical inspection method using deep learning, comprising the steps of: providing a plurality of paired image combinations, wherein each said paired image combination includes at least one defect-free image and at least one defect-containing image corresponding to the defect-free image; providing a convolutional neural network to start a training mode of the convolutional neural network; inputting the plurality of paired image combinations into the convolutional neural network, and adjusting a weight of at least one fully connected layer of the convolutional neural network through backpropagation to complete the training mode of the convolutional neural network; and performing an optical inspection process using the trained convolutional neural network.

Abstract: An electronic device includes a first body, a second body, two hinges, and at least one electronic assembly. The two hinges are connected between the first body and the second body, and the first body and the second body are adapted to rotate relatively through the two hinges. The electronic assembly is connected to the second body and is located between the two hinges.

Abstract: A memory data management method includes the following steps: reading a plurality of data of a plurality of memory cells of a memory block; determining whether error bits of the data exceed an error correction code (ECC) threshold; if the error bits of the data exceed the ECC threshold, a programming process being executed to enhance a first state data of the data for exceeding a first threshold, to enhance a second state data of the data for exceeding a second threshold, and to enhance a third state data of the data for exceeding a third threshold.

Abstract: A casing of an electronic device including a metallic housing, a first non-conductive spacer and a second non-conductive spacer is provided. The metallic housing has an inner surface and an outer surface opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first non-conductive spacer is disposed the first gap, and the second non-conductive spacer is disposed in the second gap.

Abstract: A metallic housing of an electronic device including an inner surface, an outer surface and a first non-conductive spacer is provided. The outer surface is opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first gap and the second gap each communicates the inner surface and the outer surface. The first non-conductive spacer is disposed the first gap of the metallic housing.

Abstract: The present disclosure provides a method for manufacturing semiconductor structure, including forming an insulation layer, forming a first via trench in the insulation layer, forming a barrier layer in the first via trench, forming a bottom electrode via in the first via trench, forming a magnetic tunneling junction (MTJ) layer above the bottom electrode via, and performing an ion beam etching operation, including patterning the MTJ layer to form an MTJ and removing a portion of the insulation layer from a top surface.

Abstract: An illumination system and a projection device are provided. The illumination system includes at least one laser light source providing at least one laser beam and a polarizing rotation module including a first axle, a first driving element, and a polarizing element. The first axle has a first revolution frequency. The polarizing element is disposed on a transmission path of the laser beam. The first driving element causes the polarizing element to rotate in a temporally sequenced manner. When the polarizing element is rotated, the laser beam is transmitted to the polarizing element at a specific frequency in a plurality of first time periods. The laser beam passing through the polarizing element has different polarizing states at different times. The specific frequency and the first revolution frequency of the first axle are not exactly divisible by each other. The invention can generate an image with uniform polarizing direction.

Abstract: Provided is a rapid over-the-air (OTA) production line test platform, including a device under test (DUT), an antenna array and two reflecting plates. The DUT has a beamforming function. The antenna array is arranged opposite to the DUT, and emits beams with beamforming. Two reflecting plates are disposed opposite to each other, and are arranged between the DUT and the antenna array. The beam OTA test of the DUT is carried out by propagation of the beams between the antenna array, the DUT and the two reflecting plates. Accordingly, the test time can be greatly shortened and the cost of test can be effectively reduced. In addition to the above-mentioned rapid OTA production line test platform, platforms for performing the OTA production line test by using horn antenna arrays together with bending waveguides and using a 3D elliptic curve are also provided.

Abstract: A cursor image detection comparison and feedback status determination method is disclosed. The method is based on a non-invasive data-extraction system architecture, and uses an image processing unit to perform detection comparison on a cursor image shown on an operation screen outputted from a machine controller. The method includes steps of obtaining cursor foreground and background images set by a user, and selecting an algorithm to process the cursor foreground and background images to generate a cursor mask, and reading a cursor image and applying the cursor mask on the cursor image for pattern comparison, transmitting information of a comparison result and a cursor feedback status to a software control system, so as to provide a correction system to perform a cursor process program and check whether the movement of the cursor meet a position controlled by a feedback and correction system, thereby completing closed-loop control for the cursor.

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

Abstract: A method for evaluating an efficiency of a manual inspection for a defect pattern is provided according to an embodiment of the disclosure, which comprises: enabling an evaluation program; loading a test image automatically by the enabled evaluation program and displaying the test image in a user interface; detecting a user behavior of a user after the user watches the test image; generating original data according to the user behavior, wherein the original data reflects at least one of whether the user identifies the defect pattern in the test image and a type of the defect pattern identified by the user; and performing a quantitative operation on the original data to generate evaluation data corresponding to the efficiency of the manual inspection, wherein the evaluation data reflects an evaluation result corresponding to the efficiency of the manual inspection.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: An electronic device includes a first body, a second body, two hinges, and at least one electronic assembly. The two hinges are connected between the first body and the second body, and the first body and the second body are adapted to rotate relatively through the two hinges. The electronic assembly is connected to the second body and is located between the two hinges.

Abstract: The present disclosure provides a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.

Abstract: The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate and a first conductive pad arranged over the substrate. A boundary structure is on an upper surface of the substrate around the first conductive pad. The boundary structure has one or more sidewalls defining an opening with a round shape over the first conductive pad.

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.