Abstract: A terahertz field effect non-invasive biofeedback diagnosis system comprises a trigger sensor, a terahertz wave source field unit, and a central processing & telemetry unit. The central processing and telemetry unit (CP&T) is used to generate different types of stimulus signals to patients and system operation units. The biofeedback diagnosis system is used to form two biofeedback loops: one loop is through a CP&T-patient-trigger sensor loop and the other loop is through a CP&T-operation unit-trigger sensor loop. The trigger sensor can remotely obtain the biofeedback signal of the patient, and process the feedback signal into a digital signal and send it back to the central processing and telemetry unit. In order to improve the feedback signal of patients, the terahertz wave source field unit is placed near the patient, so as to trigger the feedback signals of biological cells, tissues, organs and brain waves of patients for diagnosis.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: A terahertz field effect non-invasive biofeedback diagnosis system comprises a trigger sensor, a terahertz wave source field unit, and a central processing & telemetry unit. The central processing and telemetry unit (CP&T) is used to generate different types of stimulus signals to patients and system operation units. The biofeedback diagnosis system is used to form two biofeedback loops: one loop is through a CP&T-patient-trigger sensor loop and the other loop is through a CP&T-operation unit-trigger sensor loop. The trigger sensor can remotely obtain the biofeedback signal of the patient, and process the feedback signal into a digital signal and send it back to the central processing and telemetry unit. In order to improve the feedback signal of patients, the terahertz wave source field unit is placed near the patient, so as to trigger the feedback signals of biological cells, tissues, organs and brain waves of patients for diagnosis.

Abstract: Methods are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: Methods are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.

Abstract: A vibration ring includes a vibration module and a latex ring. The vibration module is provided with at least a battery, a circuit board and a vibration motor that are connected electrically in a spherical shell, along with a switch that is exposed out of the shell. The latex ring includes an annular wearing part that is processed with latex, and a spherical vibration part that encloses the shell of the vibration module. The spherical vibration part and the enclosed vibration module act onto a female's clitoris without pressing on other parts of the body, so as to increase the comfortableness in wearing the vibration ring and form a better exciting effect in vibration.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: A method for detecting the presence and location of defects over a substrate is disclosed. In an embodiment, the method may include: forming a semiconductor material in a plurality of openings in a reference wafer using an epitaxial growth process; performing one or more measurements on the reference wafer to obtain a baseline signal; forming a plurality of gate stacks and stressor regions in a plurality of substrates; after forming the plurality of gate stacks, forming the semiconductor material in a plurality of openings in a batch wafer; performing the one or more measurements on the batch wafer to obtain a batch signal; comparing the batch signal to the baseline signal; and determining whether a defect in present in the plurality of substrates based on the comparison.

Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.

Abstract: A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Abstract: The present disclosure provides a method forming a semiconductor device in accordance with some embodiments. The method includes receiving a substrate having a fin protruding through the substrate, wherein the fin is formed of a first semiconductor material, exposing the substrate in an environment including hydrogen radicals, thereby passivating the protruded fin using the hydrogen radicals, and epitaxially growing a cap layer of a second semiconductor material to cover the protruded fin.