Patents by Inventor Chien-Han CHIU

Chien-Han CHIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bonding structure and method for manufacturing the same
    Patent number: 11538756
    Abstract: A bonding structure is provided. The bonding structure includes a conductive layer, a seed layer, and a nanotwinned copper (NT-Cu) layer. The seed layer is disposed on the conductive layer. The NT-Cu layer is disposed on the seed layer. The NT-Cu layer has anisotropic crystal structure.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: December 27, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Shun-Tsat Tu, Pei-Jen Lo, Chien-Han Chiu
  • BONDING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20220084951
    Abstract: A bonding structure is provided. The bonding structure includes a conductive layer, a seed layer, and a nanotwinned copper (NT-Cu) layer. The seed layer is disposed on the conductive layer. The NT-Cu layer is disposed on the seed layer. The NT-Cu layer has anisotropic crystal structure.
    Type: Application
    Filed: September 16, 2020
    Publication date: March 17, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Shun-Tsat TU, Pei-Jen LO, Chien-Han CHIU
  • Passive element, electronic device and method for manufacturing the same
    Patent number: 11031382
    Abstract: An electronic device includes: a first insulation layer and a first conductive pillar. The first insulation layer has a first surface and a second surface opposite to the first surface, and the first conductive pillar comprises a first portion and a second portion. The first portion of the first conductive pillar is surrounded by the first insulation layer. The second portion of the first conductive pillar is disposed on the first surface of the first insulation layer. A height of the second portion of the first conductive pillar is equal to or greater than 10% of a height of the first portion of the conductive pillar.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: June 8, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Pei-Jen Lo, Chien-Han Chiu, Wen Hung Huang
  • PASSIVE ELEMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20200111774
    Abstract: An electronic device includes: a first insulation layer and a first conductive pillar. The first insulation layer has a first surface and a second surface opposite to the first surface, and the first conductive pillar comprises a first portion and a second portion. The first portion of the first conductive pillar is surrounded by the first insulation layer. The second portion of the first conductive pillar is disposed on the first surface of the first insulation layer. A height of the second portion of the first conductive pillar is equal to or greater than 10% of a height of the first portion of the conductive pillar.
    Type: Application
    Filed: October 3, 2018
    Publication date: April 9, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Pei-Jen LO, Chien-Han CHIU, Wen Hung HUANG