Patents by Inventor Chien-Han Wu

Chien-Han Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10847218
    Abstract: A band-gap reference start-up circuit includes a pull-up unit, a bias current unit, and a start-up unit. The pull-up unit and the bias current unit are coupled to a control node. The start-up unit is coupled to a trigger terminal of the band-gap voltage reference circuit and the control node. During a start-up process of the band-gap voltage reference circuit, the bias current unit is enabled to generate a bias current for pulling down a voltage of the control node, the start-up unit is enabled to generate a start-up current for raising a voltage of the trigger terminal to enable the band-gap voltage reference circuit when the voltage of the control node is pulled down by the bias circuit unit, and the pull-up unit is enabled to generate the pull-up current for raising the voltage of the control node when the band-gap voltage reference circuit is enabled.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: November 24, 2020
    Assignee: eMemory Technology Inc.
    Inventor: Chien-Han Wu
  • Patent number: 10700080
    Abstract: A random bit cell includes a random bit cell. The random bit cell includes a volatile memory unit, a first non-volatile memory unit, a second non-volatile memory unit, a first select transistor, and a second select transistor. The first non-volatile memory unit is coupled to a first data terminal of the volatile memory unit, and the second non-volatile memory unit is coupled to a second data terminal of the volatile memory unit. The first select transistor has a first terminal coupled to the first data terminal of the volatile memory unit, a second terminal coupled to a first bit line, and a control terminal coupled to a word line. The second select transistor has a first terminal coupled to the second data terminal of the volatile memory unit, a second terminal coupled to a second bit line, and a control terminal coupled to a word line.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: June 30, 2020
    Assignee: eMemory Technology Inc.
    Inventors: Chien-Han Wu, Chun-Hung Lu, Chun-Hung Lin, Cheng-Da Huang
  • Publication number: 20200159271
    Abstract: A band-gap reference start-up circuit includes a pull-up unit, a bias current unit, and a start-up unit. The pull-up unit and the bias current unit are coupled to a control node. The start-up unit is coupled to a trigger terminal of the band-gap voltage reference circuit and the control node. During a start-up process of the band-gap voltage reference circuit, the bias current unit is enabled to generate a bias current for pulling down a voltage of the control node, the start-up unit is enabled to generate a start-up current for raising a voltage of the trigger terminal to enable the band-gap voltage reference circuit when the voltage of the control node is pulled down by the bias circuit unit, and the pull-up unit is enabled to generate the pull-up current for raising the voltage of the control node when the band-gap voltage reference circuit is enabled.
    Type: Application
    Filed: September 9, 2019
    Publication date: May 21, 2020
    Inventor: Chien-Han Wu
  • Publication number: 20200090748
    Abstract: A random bit cell incudes a random bit cell. The random bit cell includes a volatile memory unit, a first non-volatile memory unit, a second non-volatile memory unit, a first select transistor, and a second select transistor. The first non-volatile memory unit is coupled to a first data terminal of the volatile memory unit, and the second non-volatile memory unit is coupled to a second data terminal of the volatile memory unit. The first select transistor has a first terminal coupled to the first data terminal of the volatile memory unit, a second terminal coupled to a first bit line, and a control terminal coupled to a word line. The second select transistor has a first terminal coupled to the second data terminal of the volatile memory unit, a second terminal coupled to a second bit line, and a control terminal coupled to a word line.
    Type: Application
    Filed: July 17, 2019
    Publication date: March 19, 2020
    Inventors: Chien-Han Wu, Chun-Hung Lu, Chun-Hung Lin, Cheng-Da Huang
  • Patent number: 9871390
    Abstract: A battery protection IC applied to a battery charging system is provided, where the battery charging system includes a charger and a switch, the switch is coupled between the charger and a battery when the battery is put into the battery charging system, and the battery protection IC includes a voltage divider, a comparator and a controller. The voltage divider is coupled to a first node of the switch, and is utilized for dividing a voltage of the first node to generate a divided voltage, whereat least one resistor of the voltage divider is formed by two different types of fuses. The comparator is utilized for comparing the voltage with a reference voltage to generate a comparison result. The controller is utilized for generating a control signal according to the comparison result, where the control signal is utilized for switching on or switching off the switch.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: January 16, 2018
    Assignee: Silergy Corp.
    Inventor: Chien-Han Wu
  • Publication number: 20160064974
    Abstract: A battery protection IC applied to a battery charging system is provided, where the battery charging system includes a charger and a switch, the switch is coupled between the charger and a battery when the battery is put into the battery charging system, and the battery protection IC includes a voltage divider, a comparator and a controller. The voltage divider is coupled to a first node of the switch, and is utilized for dividing a voltage of the first node to generate a divided voltage, whereat least one resistor of the voltage divider is formed by two different types of fuses. The comparator is utilized for comparing the voltage with a reference voltage to generate a comparison result. The controller is utilized for generating a control signal according to the comparison result, where the control signal is utilized for switching on or switching off the switch.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 3, 2016
    Inventor: Chien-Han Wu
  • Publication number: 20160064240
    Abstract: A method includes forming a resist over a substrate, resulting in a layer of resist scum between the resist and the substrate. The method further includes forming trenches in the resist, wherein at least a portion of the layer of resist scum remains between the trenches and the substrate. The method further includes forming a first material layer in the trenches, wherein the first material layer has a higher etch resistance than the resist in an etching process. The method further includes performing the etching process to the first material layer, the resist, and the layer of resist scum, thereby forming a patterned first material layer over a patterned layer of resist scum over the substrate.
    Type: Application
    Filed: November 6, 2015
    Publication date: March 3, 2016
    Inventors: Tsung-Min Huang, Chien-Han Wu, Chung-Ju Lee, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu