Abstract: A memory device includes a memory controller and a non-volatile memory communicatively coupled to the memory controller and storing a mapping table and a journal table. The memory controller is configured to write data and a logical address of the data into the non-volatile memory, load mapping information related to the logical address of the data from the mapping table of the non-volatile memory into a mapping cache of the memory controller, update the mapping cache with an updated mapping relationship between the logical address of the data and a physical address of the data, and perform a journaling operation to write the updated mapping relationship into the journal table.

Abstract: A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.

Abstract: An apparatus for vehicle management and control is provided. The apparatus includes a processing unit, a vehicle lock controller and a non-contactable radio frequency (RF) reader. When an identification (ID) tag approaches to the non-contactable RF reader in a predetermined distance, the non-contactable RF reader reads ID information in the ID tag, and transmits the ID information to the processing unit. The processing unit executes a task according to an interaction relationship between the non-contactable RF reader and the ID tag or a user.

Abstract: A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.

Abstract: A manufacturing method of a touch panel is provided. The method includes the following steps. A conductive layer is formed on a substrate, and a dielectric layer is formed to cover the conductive layer. The conductive layer and the dielectric layer are then patterned to respectively form several sensing wires and several dielectric blocks by using a first mask, which is a half-tone mask. Next, a transparent conductive layer is first formed to cover the conductive layer and the dielectric layer, and is then patterned to form a touch sensing structure by using a second mask.

Abstract: An antenna structure is provided, comprising: a first conductive layer, wherein the first conductive layer is formed by vacuum sputtering; and a second conductive layer formed over the first conductive layer, wherein the second conductive layer is formed by chemical plating, electroplating or printing.

Abstract: A manufacturing method of a touch panel is provided. The method includes the following steps. A conductive layer is formed on a substrate, and a dielectric layer is formed to cover the conductive layer. The conductive layer and the dielectric layer are then patterned to respectively form several sensing wires and several dielectric blocks by using a first mask, which is a half-tone mask. Next, a transparent conductive layer is first formed to cover the conductive layer and the dielectric layer, and is then patterned to form a touch sensing structure by using a second mask.