Abstract: A monolithic merged PIN Schottky (MPS) diode including a chip, at least one PIN diode, at least one Schottky diode and a termination structure is provided. The chip has a first active area, a second active area and a termination area. The PIN diode is disposed in the first active area. The Schottky diode is disposed in the second active area. The termination structure is disposed in the termination area. The first active area and the second active area are separated by the termination area. The PIN diode and the Schottky diode share the termination structure.

Abstract: An integrated light source driving circuit including a power transistor, a driving chip and a diode and a light source module using the same are provided. The power transistor includes a substrate, first and second active regions, a gate region and an isolation region. The first and second active regions are disposed on two opposite sides of the substrate. The second active region and the gate region are disposed on the same side of the substrate. The isolation region is electrically connected to the first active region and electrically independent with/from the second active region and the gate region. The driving chip is stacked on the second active region and electrically connected to the gate region. The diode is disposed in the isolation region of the power transistor, where an anode of the diode is disposed toward the isolation region to be electrically connected to the first active region.

Abstract: A trench gate MOSFET is provided. An N-type epitaxial layer is disposed on an N-type substrate. An N-type source region is disposed in the N-type epitaxial layer. The N-type epitaxial layer has at least one trench therein. An insulating layer serving as a gate insulating layer is disposed in the trench. A conductive layer serving as a gate fills up the trench. Two isolation structures are disposed in the N-type source region beside the trench and contact the trench. Two conductive plugs are disposed in the N-type epitaxial layer beside the trench and penetrate through the N-type source region. A dielectric layer is disposed on the N-type epitaxial layer. A metal layer is disposed on the dielectric layer and electrically connected to the N-type source region.

Abstract: A trench gate MOSFET is provided. An N-type epitaxial layer on an N-type substrate has a wider first trench and a narrower second trench below the first trench. A first insulating layer is in the second trench. First and second conductive layers are respectively in lower and upper portions of the first trench. A thicker second insulating layer is between the first conductive layer and N-type epitaxial layer and between the first insulating layer and first conductive layer, and a thinner third insulating layer is between the second conductive layer and N-type epitaxial layer. A P-type first doped region is in the N-type epitaxial layer below the first trench and surrounds the top of the second trench. A P-type second doped region is in the N-type epitaxial layer below the second trench. A source region is in the N-type epitaxial layer and surrounds the top of the first trench.

Abstract: A monolithic metal oxide semiconductor field effect transistor (MOSFET)-Schottky diode device including a chip, a MOSFET, a Schottky diode and a termination structure is provided. The chip is divided into a transistor region, a diode region and a termination region. The MOSFET is disposed on the transistor region. The Schottky diode is disposed on the diode region. The termination structure is disposed on the termination region. The transistor region and the diode region are divided by the termination region. The MOSFET and Schottky diode share the termination structure.

Abstract: A monolithic metal oxide semiconductor field effect transistor (MOSFET)-Schottky diode device including a chip, a MOSFET, a Schottky diode and a termination structure is provided. The chip is divided into a transistor region, a diode region and a termination region. The MOSFET is disposed on the transistor region. The Schottky diode is disposed on the diode region. The termination structure is disposed on the termination region. The transistor region and the diode region are divided by the termination region. The MOSFET and Schottky diode share the termination structure.

Abstract: A transistor having a start-up control element is provided. The transistor includes an N-type depletion mode transistor and an N-type enhancement mode transistor. The N-type depletion mode transistor includes a drain for electrically connecting to an external power supply, and a gate normally grounded. The N-type enhancement mode transistor includes a drain electrically connected to the external power supply, and a gate electrically connected to a source of the depletion mode transistor.

Abstract: The present invention discloses a charging circuit for charging a bootstrap capacitor from a supply voltage, the charging circuit comprising: a depletion mode transistor, having a first end of its source/drain electrically connected with the supply voltage, a gate electrically connected to the supply voltage, and a second end of its source/drain electrically connected with the bootstrap capacitor. Preferably, a diode is provided between the supply voltage and the depletion mode transistor.

Abstract: A transistor having a start-up control element is provided. The transistor includes an N-type depletion mode transistor and an N-type enhancement mode transistor. The N-type depletion mode transistor includes a drain for electrically connecting to an external power supply, and a gate normally grounded. The N-type enhancement mode transistor includes a drain electrically connected to the external power supply, and a gate electrically connected to a source of the depletion mode transistor.