Abstract: A tin (Sn) auto-filling device and system provided to provide new liquid Sn to an inner sidewall surface of a rotation crucible. A laser is exposed to the liquid Sn at the inner sidewall surface of the rotation crucible to generate extreme-ultraviolet-light (EUV) that is utilized to process workpieces within a semiconductor manufacturing plant (FAB). The auto-filling device automatically refills as the liquid Sn at the inner sidewall surface of the rotation crucible is consumed due to the liquid Sn at the inner sidewall surface of the rotation crucible being exposed to the laser.

Abstract: A laser produced plasma (LPP)-extreme ultraviolet (EUV) light source includes a vacuum chamber, a rotatable crucible disposed in the vacuum chamber with an annular inner surface for carrying a liquid metal, and a laser arranged to apply laser light to the liquid metal carried on the annular inner surface of the rotatable crucible to cause the liquid metal to emit EUV light. The LPP-EUV light source further includes a stationary component disposed in the vacuum chamber and positioned proximate to the annular inner surface of the rotatable crucible or surrounding the rotatable crucible, a coolant fluid delivery inlet or nozzle, and a cooling element secured with the stationary component and including a feature configured to operatively couple with coolant fluid delivered by the coolant fluid delivery inlet or nozzle.

Abstract: An EUV radiation source apparatus includes an EUV source vessel including a chamber; a crucible disposed in the chamber; a tin layer disposed on the crucible; a catcher disposed in the chamber and configured to collect fuel debris generated from a collision of the tin layer and a laser beam; a heat dissipation structure disposed over the catcher; and a venting system coupled to the EUV source vessel and communicable with the chamber. A method for generating EUV radiation includes: collecting fuel debris on a catcher disposed in a chamber of an EUV source vessel; dissipating heat from the catcher to the chamber; and venting a gas out of the EUV source vessel to cool the chamber to a decreased temperature through an opening disposed on the EUV source vessel.

Abstract: An EUV radiation source apparatus includes an EUV source vessel; a tin layer disposed in the EUV source vessel; a chamber disposed adjacent to the EUV source vessel; and a first filter disposed in the chamber, wherein the first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are integrally formed. A method for generating EUV radiation includes: forming a first filter including a membrane and a mesh integrally formed with the membrane; disposing the first filter in a chamber adjacent to an EUV source vessel; and collecting fuel debris on the first filter in the chamber.

Abstract: To improve EUV emission stability, bumps and eaves are added to the interior wall of a rotating crucible that produces EUV light by vaporizing a pre-heated metal, such as tin, using a laser. The bumps and eaves prevent migration of debris and control liquid metal flow, which is otherwise distributed over time by the centrifugal forces generated as the crucible rotates. The bumps and eaves stabilize EUV emissions by changing turbulent liquid metal flow to a predominately laminar flow. Tin catchers of various designs are available to collect and recycle a significant portion of the debris and unused liquid metal. A closed crucible chamber design alleviates non-uniform heating issues.

Abstract: A jet spray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jet spray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jet spray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jet spray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jet spray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jet spray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.

Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

Abstract: A jet spray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jet spray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jet spray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jet spray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jet spray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jet spray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.

Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.

Abstract: A method of cleaning a photolithographic mask or semiconductor wafer involves mixing a gas and water in a jetspray nozzle and discharging the gas and water jetspray stream from a nozzle onto the photolithographic mask or wafer. The water jetspray stream is made up of a cluster of micro water droplets entrained in the gas having a predetermined size sufficient to dislodge contaminant particles adhered to the surface of the mask. The step of mixing the gas and water includes radially injecting the gas from a first plurality of circumferentially spaced apart gas nozzles into a stream of the water and radially injecting the gas from a second plurality of circumferentially spaced apart gas nozzles into the stream of the water, wherein the second plurality of gas nozzles are spaced above or below the first plurality of gas nozzles and radially offset from the first plurality of gas nozzles.

Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals.

Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.

Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.