Patents by Inventor Chien-Hsing Lu
Chien-Hsing Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240004318Abstract: To improve EUV emission stability, bumps and eaves are added to the interior wall of a rotating crucible that produces EUV light by vaporizing a pre-heated metal, such as tin, using a laser. The bumps and eaves prevent migration of debris and control liquid metal flow, which is otherwise distributed over time by the centrifugal forces generated as the crucible rotates. The bumps and eaves stabilize EUV emissions by changing turbulent liquid metal flow to a predominately laminar flow. Tin catchers of various designs are available to collect and recycle a significant portion of the debris and unused liquid metal. A closed crucible chamber design alleviates non-uniform heating issues.Type: ApplicationFiled: March 6, 2023Publication date: January 4, 2024Inventors: Tzu Jeng HSU, Shy-Jay LIN, Chih-Wei WEN, Hsin-Fu TSENG, Chien-Hsing LU, Chih-Chiang TU
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Patent number: 9656278Abstract: A jet spray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jet spray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jet spray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jet spray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jet spray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jet spray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.Type: GrantFiled: May 15, 2014Date of Patent: May 23, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kun-Lung Hsieh, Chien-Hsing Lu
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Publication number: 20150146186Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.Type: ApplicationFiled: January 29, 2015Publication date: May 28, 2015Inventors: Chien-Hsing Lu, Chung-Hung Lin, Chih-Wei Wen
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Patent number: 8999610Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.Type: GrantFiled: December 31, 2012Date of Patent: April 7, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Hsing Lu, Chung-Hung Lin, Chih-Wei Wen
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Publication number: 20140291416Abstract: A jet spray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jet spray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jet spray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jet spray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jet spray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jet spray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.Type: ApplicationFiled: May 15, 2014Publication date: October 2, 2014Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kun-Lung HSIEH, Chien-Hsing LU
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Publication number: 20140186750Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.Type: ApplicationFiled: December 31, 2012Publication date: July 3, 2014Inventors: Chien-Hsing Lu, Chung-Hung Lin, Chih-Wei Wen
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Patent number: 8758523Abstract: A method of cleaning a photolithographic mask or semiconductor wafer involves mixing a gas and water in a jetspray nozzle and discharging the gas and water jetspray stream from a nozzle onto the photolithographic mask or wafer. The water jetspray stream is made up of a cluster of micro water droplets entrained in the gas having a predetermined size sufficient to dislodge contaminant particles adhered to the surface of the mask. The step of mixing the gas and water includes radially injecting the gas from a first plurality of circumferentially spaced apart gas nozzles into a stream of the water and radially injecting the gas from a second plurality of circumferentially spaced apart gas nozzles into the stream of the water, wherein the second plurality of gas nozzles are spaced above or below the first plurality of gas nozzles and radially offset from the first plurality of gas nozzles.Type: GrantFiled: October 4, 2011Date of Patent: June 24, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kun-Long Hsieh, Chien-Hsing Lu
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Publication number: 20120037192Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals.Type: ApplicationFiled: October 4, 2011Publication date: February 16, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kun-Long Hsieh, Chien-Hsing Lu
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Patent number: 8056832Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.Type: GrantFiled: October 30, 2008Date of Patent: November 15, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kun-Long Hsieh, Chien-Hsing Lu
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Publication number: 20100108104Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.Type: ApplicationFiled: October 30, 2008Publication date: May 6, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kun-Long Hsieh, Chien-Hsing Lu