Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: Disclosed is a contact lens comprising an optical region including a first area, a second area and a third area, concentrically arranged in such order from a lens center. The first area includes a correction zone having a nearsightedness correcting power. The second and third areas each include at least two defocusing zones and at least one correction zone, wherein the at least two defocusing zones and the at least one correction zone are alternatively arranged. The second area has a first power difference of ?2.00 to ?5.00 D, the third area has a second power difference of ?3.00 to ?10.00 D, and the second power difference is equal to or more negative than the first power difference.