Patents by Inventor Chien-Hsiung Tai

Chien-Hsiung Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170344432
    Abstract: Data synchronization method and device without redundant replication are used for providing real-time data accessing service and synchronizing valid data stored in a target storage apparatus to a backup storage apparatus at the same time. The target storage apparatus checks update statuses of the valid data. The valid data of the target storage apparatus is at least classified into a cold data group and a hot data group in accordance with the update statuses. In a first synchronization period, based on address information of the data block without valid data in the target storage apparatus, the data block without valid data is correspondingly established in the backup storage apparatus. At the first synchronization period, the valid data in the cold data group are synchronized from the target storage apparatus to the backup storage apparatus, and the valid data in the hot data group are not synchronized.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 30, 2017
    Applicant: QNAP SYSTEMS, INC.
    Inventors: Chih-Hung Wu, Chien-Hsiung Tai
  • Patent number: 6905970
    Abstract: A method for making a thin film bulk acoustic-wave resonator (FBAR). First, define the cavity area on a substrate. Secondly, partially etch the patterned cavity area as a presacrificial layer. Thirdly, modify the nature of the presacrificial layer as a sacrificial layer, for example, using oxidization. Fourthly, polish the upper surface of the substrate and form the FBAR structure. Finally, remove the sacrificial layer to form the reflection cavity.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: June 14, 2005
    Assignee: Industrial Technology Research Institute
    Inventors: Tai-Kang Shing, Chih-Chen Lee, Chien-Hsiung Tai
  • Patent number: 6739180
    Abstract: An intelligent gas identification system and method of gas identification in a specific environment. The intelligent gas identification system has a sensor, a pulse power supply module, and a processing device in which a plurality of chemical matter characteristics signals is stored. When the sensor is disposed in the specific environment, the pulse power supply module sends a variable pulse-amplitude-modulated voltage to the sensor, so that the sensor outputs a signal to the processing device. The processing device compares the outgoing signal to the chemical matter characteristics signals to determine an identification result for the gas.
    Type: Grant
    Filed: March 10, 2003
    Date of Patent: May 25, 2004
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Shiao Huang, I-Cherng Chen, Chien-Hsiung Tai, Wen-Yuan Tsai
  • Publication number: 20040040371
    Abstract: An intelligent gas identification system and method of gas identification in a specific environment. The intelligent gas identification system has a sensor, a pulse power supply module, and a processing device in which a plurality of chemical matter characteristics signals is stored. When the sensor is disposed in the specific environment, the pulse power supply module sends a variable pulse-amplitude-modulated voltage to the sensor, so that the sensor outputs a signal to the processing device. The processing device compares the outgoing signal to the chemical matter characteristics signals to determine an identification result for the gas.
    Type: Application
    Filed: March 10, 2003
    Publication date: March 4, 2004
    Applicant: Industrial Technology Research Institute
    Inventors: Yi-Shiao Huang, I-Cherng Chen, Chien-Hsiung Tai, Wen-Yuan Tsai
  • Publication number: 20030094431
    Abstract: A method for making a thin film bulk acoustic-wave resonator (FBAR). First, define the cavity area on a substrate. Secondly, partially etch the patterned cavity area as a presacrificial layer. Thirdly, modify the nature of the presacrificial layer as a sacrificial layer, for example, using oxidization. Fourthly, polish the upper surface of the substrate and form the FBAR structure. Finally, remove the sacrificial layer to form the reflection cavity.
    Type: Application
    Filed: November 15, 2002
    Publication date: May 22, 2003
    Inventors: Tai-Kang Shing, Chih-Chen Lee, Chien-Hsiung Tai