Patents by Inventor Chien-Hua FU

Chien-Hua FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LITHOGRAPHY SYSTEM WITH FUEL CELL AND METHODS
    Publication number: 20250102927
    Abstract: A method includes: forming a mask layer on a semiconductor wafer; generating light by a tin droplet by a lithography exposure system; exposing the mask layer by the light; cleaning tin debris accumulated in the lithography exposure system by hydrogen gas; pumping the hydrogen gas from the lithography exposure system to a fuel cell; and generating electric power by the fuel cell.
    Type: Application
    Filed: September 22, 2023
    Publication date: March 27, 2025
    Inventors: Chien-Hua FU, Che-Chang HSU, Kai-Fa HO, Li-Jui CHEN
  • Semiconductor device having high-? dielectric layer and method for manufacturing the same
    Patent number: 11201055
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: December 14, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chien-Hua Fu, Keng-Yung Lin, Yen-Hsun Lin, Kuanhsiung Chen, Juei-Nai Kwo, Minghwei Hong
  • SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20180151356
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.
    Type: Application
    Filed: September 15, 2017
    Publication date: May 31, 2018
    Inventors: Chien-Hua FU, Keng-Yung LIN, Yen-Hsun LIN, Kuanhsiung CHEN, Juei-Nai KWO, Minghwei HONG