Abstract: Building-block antenna structures as well as systems and methods for implementing these antenna structures are disclosed. In one embodiment, the building-block antenna structure includes an outer antenna structure having one or more outer antenna feeds and an outer antenna radiator. The outer antenna structure further includes an inner antenna accommodating perimeter with the inner antenna accommodating perimeter further including one or more feed clearance areas that are configured to accommodate one or more inner antenna feeds. The building-block antenna structure also includes an inner antenna structure having a perimeter that is similar in shape to the inner antenna accommodating perimeter. The inner antenna structure also includes one or more inner antenna feeds and an inner antenna radiator. The outer antenna structure has a similar thickness as the inner antenna structure with the outer antenna structure also operating at a different frequency band than the inner antenna structure.

Abstract: Provided is a device for pulmonary rehabilitation. The device is configured to provide adjustable resistance for a patient during respiratory training on demands so as to improve rehabilitation efficiency. Moreover, the device is configured to adapt a variety of external parts to assist in medication dosing, information processing, and/or sputum removal for the patient during respiratory training. Therefore, optimal efficiency for pulmonary rehabilitation and smooth experience during respiratory training for the patient can be achieved.

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Abstract: A method of forming a semiconductor device includes removing a top portion of a dielectric layer surrounding a metal gate to form a recess in the dielectric layer; filling the recess with a capping structure; forming a patterned hard mask over the capping structure and over the metal gate, wherein a portion of the metal gate, a portion of the capping structure, and a portion of the dielectric layer are aligned vertically with an opening of the patterned hard mask; and performing an etch process on said portions of the metal gate, the capping structure, and the dielectric layer that are aligned vertically with the opening of the patterned hard mask, wherein the capping structure has an etch resistance higher than an etch resistance of the dielectric layer during the etch process.

Abstract: A method of forming a semiconductor device includes removing a top portion of a dielectric layer surrounding a metal gate to form a recess in the dielectric layer; filling the recess with a capping structure; forming a patterned hard mask over the capping structure and over the metal gate, wherein a portion of the metal gate, a portion of the capping structure, and a portion of the dielectric layer are aligned vertically with an opening of the patterned hard mask; and performing an etch process on said portions of the metal gate, the capping structure, and the dielectric layer that are aligned vertically with the opening of the patterned hard mask, wherein the capping structure has an etch resistance higher than an etch resistance of the dielectric layer during the etch process.

Abstract: A method of forming a semiconductor structure includes forming a metal gate stack over a shallow trench isolation (STI) material in a semiconductor substrate, forming an interlayer dielectric over the STI material, recessing the interlayer dielectric to a height lower than a top surface of the metal gate stack, forming a helmet structure over the recessed interlayer dielectric, and after forming the helmet structure, etching the metal gate stack until reaching the STI material.

Abstract: A surface-mounted signal transceiver module with multi-signal feed-in includes an antenna unit, a circuit board and a signal-integrating component. A radiation layer is arranged on a substrate-front face of the antenna unit. A ground layer is arranged on a substrate-back face. A first-feed-in line and a second-feed-in line are arranged on a substrate-side face. A first-ground face arranged on a circuit-board-front face of the circuit board is connected to the ground layer. A first contact and a second contact of the circuit board are connected to the first-feed-in line and the second-feed-in line respectively, and electrically connected to a fixing-connecting area arranged on a circuit-board-back face. The signal-integrating component is electrically connected to the fixing-connecting area, and connected to the first-feed-in line and the second-feed-in line through the first contact and the second contact respectively, to integrate signals sent through the first-feed-in line and the second-feed-in line.

Abstract: A method of forming a semiconductor structure includes forming a metal gate stack over a shallow trench isolation (STI) material in a semiconductor substrate, forming an interlayer dielectric over the STI material, recessing the interlayer dielectric to a height lower than a top surface of the metal gate stack, forming a helmet structure over the recessed interlayer dielectric, and after forming the helmet structure, etching the metal gate stack until reaching the STI material.

Abstract: A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Abstract: The invention relates to a stacked circularly polarized antenna structure (10). The stacked circularly polarized antenna structure (10) comprises a first antenna (1), a second antenna (2), and an adhesive element (3). The adhesive element (3) is adhered between the first antenna (1) and the second antenna (2) to stack and form a stacked circularly polarized antenna structure (10) having the first antenna (1) and the second antenna (2) made of ceramic material with the same dielectric constant, having two feeding elements to reach circular polarization and enhance antenna bandwidth, and stacking the two antennas (1, 2) together to form two resonance frequencies.

Abstract: The invention relates to a stacked circularly polarized antenna structure (10). The stacked circularly polarized antenna structure (10) comprises a first antenna (1), a second antenna (2), and an adhesive element (3). The adhesive element (3) is adhered between the first antenna (1) and the second antenna (2) to stack and form a stacked circularly polarized antenna structure (10) having the first antenna (1) and the second antenna (2) made of ceramic material with the same dielectric constant, having two feeding elements to reach circular polarization and enhance antenna bandwidth, and stacking the two antennas (1, 2) together to form two resonance frequencies.