Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.

Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.

Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A system configured to detect defects on a wafer is provided. The system includes an inspection subsystem configured to acquire scan data of a target region on the wafer. The target region comprises a plurality of circuit layout streaming data on the wafer and the defects in proximity to the circuit layout streaming data or in the circuit layout streaming data. A graphic design subsystem (GDS) is configured to store a map of circuit layout streaming data of the wafer. A software tool for designing electronic systems is configured to label the scan data with attributes from the map of circuit layout streaming data. A decision subsystem is configured to qualify the process based on a predetermined defect level from the labeled scan data by using a multi-dimension clustering method, wherein the predetermined defect level is an accumulated defect formed on the semiconductor wafer during processing.

Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.

Abstract: A method for semiconductor wafer inspection is provided. The method includes the following operations. The semiconductor wafer is scanned to acquire a scanned map, wherein the semiconductor wafer is patterned according to a design map having a programmed defect. The design map and the scanned map are transformed to a transformed inspection map according to the location of the programmed defect on the design map and the location of the programmed defect on the scanned map. The system of semiconductor wafer inspection is also provided.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A defect detecting method, a defect detecting system, and a non-transitory computer-readable medium are provided. The defect detecting method includes applying a rank filter to multiple scan images of consecutive dies of a reference wafer scanned by a wafer inspection tool to obtain multiple reference die images; collecting multiple target die images of a target die of a target wafer scanned by the wafer inspection tool; comparing the target die images with the reference die images to detect multiple defects according to differences of pixel values of corresponding pixels in the target die images and the reference die images; and excluding multiple common defects from the detected defects to detect at least one mask defect printed on the target wafer, where the common defects are obtained by the wafer inspection tool performing a wafer inspection on the target wafer.

Abstract: A method for semiconductor wafer inspection is provided. The method includes the following operations. The semiconductor wafer is scanned to acquire a scanned map, wherein the semiconductor wafer is patterned according to a design map having a programmed defect. The design map and the scanned map are transformed to a transformed inspection map according to the location of the programmed defect on the design map and the location of the programmed defect on the scanned map. The system of semiconductor wafer inspection is also provided.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A defect inspection method and a defect inspection system are provided. In the method, a plurality of candidate defect images are retrieved from inspection images obtained by at least one optical inspection tool performing hot scans on at least one wafer and a plurality of attributes are extracted from the inspection images. A random forest classifier including a plurality of decision trees for classifying the candidate defect images is created, wherein the decision trees are built with different subset of the attributes and the candidate defect images. A plurality of candidate defect images are retrieved from the optical inspection tool in runtime and applied to the decision trees, and classified into nuisance images and real defect images according to votes of the decision trees in which the nuisance images are filtered out. The real defect images with the votes over a confidence value are sampled for microscopic review.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A defect inspection method and a defect inspection system are provided. In the method, a plurality of candidate defect images are retrieved from inspection images obtained by at least one optical inspection tool performing hot scans on at least one wafer and a plurality of attributes are extracted from the inspection images. A random forest classifier including a plurality of decision trees for classifying the candidate defect images is created, wherein the decision trees are built with different subset of the attributes and the candidate defect images. A plurality of candidate defect images are retrieved from the optical inspection tool in runtime and applied to the decision trees, and classified into nuisance images and real defect images according to votes of the decision trees in which the nuisance images are filtered out. The real defect images with the votes over a confidence value are sampled for microscopic review.

Abstract: A defect detecting method, a defect detecting system, and a non-transitory computer-readable medium are provided. The defect detecting method includes applying a rank filter to multiple scan images of consecutive dies of a reference wafer scanned by a wafer inspection tool to obtain multiple reference die images; collecting multiple target die images of a target die of a target wafer scanned by the wafer inspection tool; comparing the target die images with the reference die images to detect multiple defects according to differences of pixel values of corresponding pixels in the target die images and the reference die images; and excluding multiple common defects from the detected defects to detect at least one mask defect printed on the target wafer, where the common defects are obtained by the wafer inspection tool performing a wafer inspection on the target wafer.

Abstract: One embodiment relates to a method of inspecting an array of cells on a substrate. A reference image is generated using a cell image that was previously determined to be defect free. A reference contour image which includes contours of the reference image is also generated. The reference contour image is used to detect defects in the array of cells on the substrate. Another embodiment relates to a system for detecting defects in an array on a substrate. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to a method of inspecting an array of cells on a substrate. A reference image is generated using a cell image that was previously determined to be defect free. A reference contour image which includes contours of the reference image is also generated. The reference contour image is used to detect defects in the array of cells on the substrate. Another embodiment relates to a system for detecting defects in an array on a substrate. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to a method of inspecting a site location on a target substrate. Contours are obtained, the contours having been generated from a reference image using a design clip. A target image of the site location is acquired. The contours are aligned to the target image, and contrast values are computed for pixels on the contours. A threshold is applied to the contrast values to determine contour-based defect blobs. Another embodiment relates to a method of generating contours for use in inspecting a site location for defects. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to a method of classifying a defect on a substrate surface. The method includes scanning a primary electron beam over a target region of the substrate surface causing secondary electrons to be emitted therefrom, wherein the target region includes the defect. The secondary electrons are detected from the target region using a plurality of at least two off-axis sensors so as to generate a plurality of image frames of the target region, each image frame of the target region including data from a different off-axis sensor. The plurality of image data frames are processed to generate a surface height map of the target region, and surface height attributes are determined for the defect. The surface height attributes for the defect are input into a defect classifier. Other embodiments, aspects and features are also disclosed.