Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.

Abstract: An antenna module including a first radiator and a second radiator is provided. The first radiator includes a first segment to a fifth segment connected in sequence. A first slot is formed between the second segment and the fourth segment. The second radiator has an edge. A first retracting distance is between the second segment and an extension line. A second retracting distance is between the fourth segment and the extension line. The first segment resonates at a first high frequency band. The first radiator and the first slot resonate at a low frequency band and a second high frequency band. The first retracting distance, the second retracting distance, the second segment, the fourth segment, the fifth segment and the first slot resonate at a third high frequency band. The first segment and the second radiator resonate at a fourth high frequency band. In addition, an electronic device is provided.

Abstract: A system, an apparatus, and a method for cloud resource allocation are provided. The cloud resource allocation system includes a plurality of worker nodes and a master node. The master node includes: an orchestrator configured to: obtain multiple node resource information respectively reported by a plurality the worker nodes through a resource manager; and parse a job profile of a job request obtained from the waiting queue through the job scheduler and decide to execute a direct resource allocation or a preemptive indirect resource allocation for a job to be handled requested by the job request based on the node resource information and the job profile.

Abstract: A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.

Abstract: Provided herein are acute myeloid leukemia antigen targets for chimeric receptors and methods of using same.

Abstract: The present disclosure provides a substrate structure including a substrate, a first electrode, a second electrode, a first signal line, and a second signal line. The substrate includes a functional region and a peripheral region, and the peripheral region is adjacent to the functional region. The first electrode and the second electrode are disposed on the substrate and arranged along a first direction. The first signal line and the second signal line are arranged on the substrate and along the first direction and extend along a second direction perpendicular to the first direction. The first signal line is electrically connected to the first electrode, and the second signal line is electrically connected to the second electrode. The first signal line and the second signal line are electrically connected to each other in the peripheral region.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

Abstract: A wafer grinding parameter optimization method and an electronic device are provided. The method includes the following. A natural frequency of a grinding wheel spindle of wafer processing equipment is obtained, and a grinding stability lobe diagram is generated accordingly. A grinding speed is selected based on a speed range of the grinding wheel spindle. Multiple grinding parameter combinations are determined based on the grinding speed. Multiple grinding simulation result combinations corresponding to the grinding parameter combinations are generated. A specific grinding parameter combination is selected based on each of the grinding simulation result combinations, and the wafer processing equipment is set accordingly.

Abstract: The present invention discloses a port district sea line multiple vessel monitoring system and operating method thereof. Specifically, the port district sea line multiple vessel monitoring system comprises a processing module, a storage module, a camera and a floating object information receiving module. The port district sea line multiple vessel monitoring system may automatically recognize image classification of water surface object, therefore to determine operation of patrol mode, monitor mode or auxiliary recognizing mode for satisfying the needs of monitoring of port district sea line.

Abstract: The present application discloses a beamforming antenna device and a method for operating a beamforming antenna device. The beamforming antenna device includes a plurality of antenna elements and a plurality of sub-arrays. The plurality of sub-arrays are coupled to the plurality of antenna elements. Each of the sub-arrays is coupled to its adjacent sub-arrays of the plurality of sub-arrays, and at least a portion of the plurality of sub-arrays form a sub-array chain.

Abstract: Methods for making semiconductor device having improve contact structures including the operations of depositing a first dielectric material, depositing a barrier material over the first dielectric material, depositing a second dielectric material over the barrier material, etching a two-slope contact opening with an upper sidewall angle of the opening through the second dielectric material that is less than a lower sidewall angle of the opening through the first dielectric material, and filling the two-slope contact opening with a conductive material, the conductive material.

Abstract: A display device is provided and includes a display panel, a light source, a light source controller, and a timing controller. The light source is adjacent to the display panel. The light source controller is electrically connected to the light source. The timing controller is electrically connected to the light source controller and the display panel. The timing controller includes a decoding unit and first and second processing units. The first processing unit is electrically connected to the decoding unit and the display panel. The second processing unit is electrically connected to the decoding unit and the light source controller. The decoding unit provides a refresh signal to the first and second processing units so that the display panel refreshes displayed content in a first refresh sequence according to first refresh rates, and the light source refreshes brightness in a second refresh sequence according to second refresh rates.

Abstract: A device includes a semiconductor substrate, a channel layer, a gate structure, source/drain epitaxial structures, and a dielectric isolation layer. The channel layer is over the semiconductor substrate. The gate structure is over the semiconductor substrate and surrounds the channel layer. The source/drain epitaxial structures are connected to the channel layer and arranged in a first direction. The dielectric isolation layer is between the gate structure and the semiconductor substrate. The dielectric isolation layer is wider than the gate structure but narrower than the channel layer in the first direction.

Abstract: A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a spacer layer along a first fin structure and a second fin structure, etching a first portion of the spacer layer and the first fin structure to form first fin spacers and a first recess between the first fin spacers, etching a second portion of the spacer layer and the second fin structure to form second fin spacers and a second recess between the second fin spacers, and forming a first source/drain feature in the first recess and a second source/drain feature in the second recess. The second fin structure is wider than the first fin structure. The first fin spacers have a first height, and the second fin spacers have a second height that is greater than the first height.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: The invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a first substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer, each of the first sub-layer and the second sub-layer includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer, and the third sub-layer includes silver or silver alloy; performing an etching process, an etching solution is used to etch the first sub-layer, the second sub-layer and the third sub-layer to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer, and the etching solution includes 1 to 2.6 wt % of nitric acid, 35 to 45 wt % of acetic acid, 35 to 45 wt % of phosphoric acid and a remaining amount of water.

Abstract: A noise measuring device is provided. The noise measuring device includes a soundproof box, a sound receiving device, a holding device, and a driving device. The sound receiving device is disposed in the soundproof box. The holding device is disposed in the soundproof box and configured to hold a testing object. The driving device is connected with the soundproof box and configure to drive the soundproof box to rotate.

Abstract: A display device is provided. The display device includes a first electrode and a second electrode. The first electrode includes a first main portion, a first peripheral portion, and a plurality of first extending portions. Part of the first extending portions extend into the first peripheral portion and are connected to each other via a first vertically-extending portion. Other part of the first extending portions do not extend into the first peripheral portion and are separated from each other. The second electrode includes a second main portion, a second peripheral portion, and a plurality of second extending portions. Part of the second extending portions extend into the second peripheral portion and are connected to each other via a second vertically-extending portion. Other part of the second extending portions do not extend into the second peripheral portion and are separated from each other.