Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A package structure, including: a first packaging member having oppositely arranged first surface and second surface; a control chip covered by the first packaging member; a plurality of conductors provided on and protruding from the control chip and electrically connected to electrical contacts of the control chip, the conductors being covered by the first packaging member, and ends of the conductors facing away from the control chip being flush with the first surface; a wire pattern layer disposed on the first surface and electrically connected to the conductors; a light emitting element located on the first surface and electrically connected to the control chip via the wire pattern layer; and a second packaging member covering the light emitting element and affixed to the first surface and the wire pattern layer, a light beam emitted by the light emitting element being allowed to travel outward through the second packaging member.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A semiconductor device includes a gate structure on a substrate and a dielectric film stack over the gate structure and the substrate, where the dielectric film stack includes a first inter layer dielectric (ILD) over the substrate and the gate structure, a barrier layer over the first ILD, a second ILD over the barrier layer, and a contact extending through the dielectric film stack. An upper portion of a contact sidewall has a first slope, a lower portion of the contact sidewall has a second slope different from the first slope, and a transition from the first slope to the second slope occurs at a portion of the contact extending through the barrier layer.

Abstract: An springback compensation method for on-line real-time metal sheet roll bending includes the steps of using multiple rollers to bend a continuous metal sheet of multiple sections having different materials or different thickness respectively; using a first position sensor to individually measure springback angles of the multiple sections of the bent metal sheet, and feeding back to a programmable logic controller; using the programmable controller to control a bending roller to compensate the multiple sections of the bent metal sheet respectively; using a second position sensor to individually measure compensated angles of the multiple sections of the bent metal sheet; and comparing a difference between the compensated angles and standard angles of the multiple sections of the bent metal sheet after compensating bending.

Abstract: An springback compensation method for on-line real-time metal sheet roll bending includes the steps of using multiple rollers to bend a continuous metal sheet of multiple sections having different materials or different thickness respectively; using a first position sensor to individually measure springback angles of the multiple sections of the bent metal sheet, and feeding back to a programmable logic controller; using the programmable controller to control a bending roller to compensate the multiple sections of the bent metal sheet respectively; using a second position sensor to individually measure compensated angles of the multiple sections of the bent metal sheet; and comparing a difference between the compensated angles and standard angles of the multiple sections of the bent metal sheet after compensating bending.

Abstract: A method for manufacturing a clad type electromagnetic shielding material includes step as follows: a first electrically conductive metallic layer, a magnetically conductive metallic layer, a second electrically conductive metallic layer and a shock-absorbing insulation layer, which are stacked in order, are one-time continuously rolled by a clad type rolling process, so as to finish a clad plate applied to an electromagnetic shielding field, wherein the surface of the shock-absorbing insulation layer provided with a binder faces the second electrically conductive metallic layer.

Abstract: A method for manufacturing a clad type electromagnetic shielding material includes step as follows: a first electrically conductive metallic layer, a magnetically conductive metallic layer, a second electrically conductive metallic layer and a shock-absorbing insulation layer, which are stacked in order, are one-time continuously rolled by a clad type rolling process, so as to finish a clad plate applied to an electromagnetic shielding field, wherein the surface of the shock-absorbing insulation layer provided with a binder faces the second electrically conductive metallic layer.

Abstract: In one embodiment of a controllable prosody re-estimation system, a TTS/STS engine consists of a prosody prediction/estimation module, a prosody re-estimation module and a speech synthesis module. The prosody prediction/estimation module generates predicted or estimated prosody information. And then the prosody re-estimation module re-estimates the predicted or estimated prosody information and produces new prosody information, according to a set of controllable parameters provided by a controllable prosody parameter interface. The new prosody information is provided to the speech synthesis module to produce a synthesized speech.

Abstract: A method of operating presentation through a multi-touch panel, comprises steps of providing a presenting module having a format transformation module, user interface generator and presenting/reading mode switching module to a system; activating the presenting module and display interface generated by the user interface generator on a multiple-touch panel of the system, wherein the interface generated by the user interface generator includes a shrinkage image area to display the non-activated file, an operation area to display file which is activated and a buffer zoon to allow a user drag file in the shrinkage image area to the operation area, thereby activating the dragged file.

Abstract: In one embodiment of a controllable prosody re-estimation system, a TTS/STS engine consists of a prosody prediction/estimation module, a prosody re-estimation module and a speech synthesis module. The prosody prediction/estimation module generates predicted or estimated prosody information. And then the prosody re-estimation module re-estimates the predicted or estimated prosody information and produces new prosody information, according to a set of controllable parameters provided by a controllable prosody parameter interface. The new prosody information is provided to the speech synthesis module to produce a synthesized speech.