Abstract: A method for generating a three-dimensional (3D) global pose includes: receiving an image and performing a detection operation to detect a human body in the image; obtaining a two-dimensional (2D) heatmap that is related to a skeleton structure of the human body and that includes a plurality of human keypoints, and obtaining a plurality of 2D coordinate sets each indicating a position of a corresponding one of the human keypoints; performing a 3D human pose estimation operation on the plurality of 2D coordinate sets to obtain a 3D human pose that is related to the skeleton structure in a local coordinate system, and that includes a plurality of 3D keypoints corresponding to the plurality of human keypoints, respectively; and based on the 3D human pose, using a numerical optimization solver to generate a 3D global pose in a world coordinate system.

Abstract: A method of motion capture includes: by multiple positioning devices located on a user, receiving scanning signals emitted by signal emitting devices to obtain detected coordinates, determining angular information, and generating and transmitting to a processor position signals that contain the angular information and the detected coordinates of the positioning devices; by the processor based on the position signals and data of a skeleton related to the user, determining estimated coordinates of a position of a body portion of the user; and generating an image of a virtual object based on the position signals, the estimated coordinates, the data of the skeleton related to the user and data of a skeleton related to a virtual object, and controlling a display to display the image.

Abstract: A method of fabricating a semiconductor device. A wafer having a front side and a back side opposite to the front side is prepared. A plurality of through substrate vias (TSVs) is formed on the front side. A redistribution layer (RDL) is then formed on the TSVs. The wafer is bonded to a carrier. A wafer back side grinding process is performed to thin the wafer on the back side. An anneal process is performed to recrystallize the TSVs. A chemical-mechanical polishing (CMP) process is performed to polish the back side.

Abstract: A method of fabricating a semiconductor device. A wafer having a front side and a back side opposite to the front side is prepared. A plurality of through substrate vias (TSVs) is formed on the front side. A redistribution layer (RDL) is then formed on the TSVs. The wafer is bonded to a carrier. A wafer back side grinding process is performed to thin the wafer on the back side. An anneal process is performed to re-crystallize the TSVs. A chemical mechanical polishing (CMP) process is performed to polish the back side.