Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on the substrate along a predetermined direction for being electrically coupled to each other, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer is formed with at least one type of a buffering cavity, wave-shaped slots, and rectangular slots, which penetrate therethrough along the predetermined direction. The buffering cavity can be located in the adhesive layer, and any one type of the wave-shaped slots and the rectangular slots can be respectively recessed in an inner side and an outer side of the adhesive layer. A minimum width of the adhesive layer is greater than or equal to 50% of a predetermined width between the inner side and the outer side.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a light-permeable layer, an adhesive layer having a ring-shape and sandwiched between the sensor chip and the light-permeable layer, and an encapsulant formed on the substrate. The adhesive layer has two adhering surfaces having a same area and a middle cross section located at a middle position between the two adhering surfaces. An area of the middle cross section is 115% to 200% of an area of any one of the two adhering surfaces. The adhesive layer can provide for light to travel therethrough, and enables the light therein to change direction and to attenuate. The sensor chip, the adhesive layer, and the light-permeable layer are embedded in the encapsulant, and an outer surface of the light-permeable layer is at least partially exposed from the encapsulant.

Abstract: A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a fixing adhesive layer disposed on the substrate, a sensor chip adhered to the fixing adhesive layer, an annular adhering layer disposed on the sensor chip, a light-permeable sheet adhered to the annular adhering layer, and a plurality of metal wires that are electrically coupled to the substrate and the sensor chip. The size of the light-permeable sheet is smaller than that of the sensor chip.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: A security lock has a fixing element and at least one hook. The fixing element is mounted in a security slot of an electronic device. The hook is capable of moving axially with respect to the fixing element, and the hook moves radially outward along a guiding structure of the fixing element to engage with the security slot, the fixing element stays static, i.e., without moving and rotating as the hook is moving. Therefore, the security lock won't press the security slot, and further prevents damage to the security slot caused by frequently or constantly loaded with the security lock. Furthermore, without moving and rotating in a mounting process of the security lock, the fixing element holds the hook to steadily engage with the security slot, and thus an overall anti-pulling and anti-pushing performances are enhanced.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: An electronic device includes a metal back cover, a metal frame, a first antenna module and a second antenna module. The metal frame includes a first and a second disconnection portion, a first and a second connection portion. The first and the second connection portion are connected to the metal back cover. The first disconnection portion is separated from the first connection portion, the metal back cover and the second disconnection portion to form a first slot. The second disconnection portion is connected to the second connection portion and is separated from the metal back cover to form a second slot. The first antenna module is connected to the first disconnection portion, and forms a first antenna path. The second antenna module is connected to the second disconnection portion, and forms a second and a third antenna path with the second disconnection portion and the metal back cover.

Abstract: A method includes mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe. An electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water. A mixture of the first DI water and the second DI water is applied from the merging pipe onto a wafer.

Abstract: A drainage device includes a tank, a pipe and an air duct. The tank has a base plate and at least one first wall. The first wall is disposed on the base plate. The base plate and the first wall define a space. The pipe defines a channel. The pipe connects with the base plate. The channel communicates with the space. The air duct is disposed partially in the space and partially in the channel. There exists at least one gap between an outer surface of the air duct and an inner surface of the pipe.

Abstract: A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists.

Abstract: A drippage prevention system including: a first automatic control valve (ACV), an input of the first ACV fluidically connected to a source of fluid to be dispensed, the first ACV having a position ranging from fully closed to fully open; a second ACV, an input of the second ACV being fluidically connected to the output of the first ACV, and an output of the second ACV being fluidically connected to a nozzle, the second ACV having positions ranging from fully closed to fully open; a proxy sensor configured to generate a proxy signal representing an indirect measure of a position of the first ACV; and a controller electrically connected to the first and second ACVs and the proxy sensor, the controller being configured to cause the second ACV to close based on the proxy signal and thereby stop flow of the liquid to the nozzle.

Abstract: A method includes mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe. An electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water. A mixture of the first DI water and the second DI water is applied from the merging pipe onto a wafer.

Abstract: A system for providing deionized (DI) water with a dynamic electrical resistivity is provided. The system includes plural DI water sources, source pipes, flow control devices, a merging pipe and a flow controller. The DI water sources respectively have different electrical resistivities. The source pipes are respectively connected to the DI water sources in a one-to-one manner. The flow control devices are respectively disposed in the source pipes in a one-to-one manner. The merging pipe joins the source pipes. The flow controller includes a resistivity sensor disposed in the merging pipe, and the flow controller is configured to control a flowrate of the DI water through the source pipes.

Abstract: A drippage prevention system including: a first automatic control valve (ACV), an input of the first ACV fluidically connected to a source of fluid to be dispensed, the first ACV having a position ranging from fully closed to fully open; a second ACV, an input of the second ACV being fluidically connected to the output of the first ACV, and an output of the second ACV being fluidically connected to a nozzle, the second ACV having positions ranging from fully closed to fully open; a proxy sensor configured to generate a proxy signal representing an indirect measure of a position of the first ACV; and a controller electrically connected to the first and second ACVs and the proxy sensor, the controller being configured to cause the second ACV to close based on the proxy signal and thereby stop flow of the liquid to the nozzle.

Abstract: A system for providing deionized (DI) water with a dynamic electrical resistivity is provided. The system includes plural DI water sources, source pipes, flow control devices, a merging pipe and a flow controller. The DI water sources respectively have different electrical resistivities. The source pipes are respectively connected to the DI water sources in a one-to-one manner. The flow control devices are respectively disposed in the source pipes in a one-to-one manner. The merging pipe joins the source pipes. The flow controller includes a resistivity sensor disposed in the merging pipe, and the flow controller is configured to control a flowrate of the DI water through the source pipes.

Abstract: A drainage device includes a tank, a pipe and an air duct. The tank has a base plate and at least one first wall. The first wall is disposed on the base plate. The base plate and the first wall define a space. The pipe defines a channel. The pipe connects with the base plate. The channel communicates with the space. The air duct is disposed partially in the space and partially in the channel. There exists at least one gap between an outer surface of the air duct and an inner surface of the pipe.