Patents by Inventor Chien-Jen Lai
Chien-Jen Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230367228Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.Type: ApplicationFiled: July 28, 2023Publication date: November 16, 2023Inventors: Kenneth Lik Kin Ho, Chien-Jen Lai, Kenji Yamazoe, Xin Zhou, Danping Peng
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Patent number: 11754930Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.Type: GrantFiled: July 26, 2022Date of Patent: September 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kenneth Lik Kin Ho, Chien-Jen Lai, Kenji Yamazoe, Xin Zhou, Danping Peng
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Publication number: 20230274063Abstract: A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.Type: ApplicationFiled: May 8, 2023Publication date: August 31, 2023Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Patent number: 11645443Abstract: A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.Type: GrantFiled: June 1, 2020Date of Patent: May 9, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Publication number: 20220390854Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.Type: ApplicationFiled: July 26, 2022Publication date: December 8, 2022Inventors: Kenneth Lik Kin HO, Chien-Jen LAI, Kenji YAMAZOE, Xin ZHOU, Danping PENG
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Patent number: 11435670Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.Type: GrantFiled: February 26, 2021Date of Patent: September 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kenneth Lik Kin Ho, Chien-Jen Lai, Kenji Yamazoe, Xin Zhou, Danping Peng
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Publication number: 20220276567Abstract: A method of enhancing a layout pattern includes determining a vector transmission cross coefficient (vector-TCC) operator of an optical system of a lithographic system based on an illumination source of the optical system and an exit pupil of the optical system of the lithographic system. The method also includes performing an optical proximity correction (OPC) operation of a layout pattern of a photo mask to generate an OPC corrected layout pattern. The OPC operation uses the vector-TCC operator to determine a projected pattern of the layout pattern of the photo mask on a wafer. The method includes producing the OPC corrected layout pattern on a mask blank to create a photo mask.Type: ApplicationFiled: February 26, 2021Publication date: September 1, 2022Inventors: Kenneth Lik Kin HO, Chien-Jen LAI, Kenji YAMAZOE, Xin ZHOU, Danping PENG
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Publication number: 20220026812Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.Type: ApplicationFiled: October 12, 2021Publication date: January 27, 2022Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Patent number: 11143955Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.Type: GrantFiled: October 17, 2019Date of Patent: October 12, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Publication number: 20200293709Abstract: A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Patent number: 10671786Abstract: A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.Type: GrantFiled: May 10, 2017Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Publication number: 20200050101Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.Type: ApplicationFiled: October 17, 2019Publication date: February 13, 2020Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Patent number: 10466586Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on a set of processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.Type: GrantFiled: August 2, 2017Date of Patent: November 5, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Publication number: 20180149967Abstract: A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on a set of processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.Type: ApplicationFiled: August 2, 2017Publication date: May 31, 2018Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Publication number: 20180150578Abstract: A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.Type: ApplicationFiled: May 10, 2017Publication date: May 31, 2018Inventors: Chien-Jen Lai, Xin Zhou, Danping Peng
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Patent number: 8704198Abstract: Extreme ultraviolet radiation is generated based on high-order harmonic generation. First, a driver pulse is generated from a drive laser. Second, the infrared driver pulse is passed through a second harmonic generator with an output wavelength in the range from 400 to 700 nm. Third, the pulse is then passed through a gas medium, which can be inside a resonant cavity, to generate a high-order harmonic in the form of extreme ultraviolet radiation.Type: GrantFiled: December 13, 2010Date of Patent: April 22, 2014Assignee: Massachusetts Institute of TechnologyInventors: Franz X. Kaertner, Edilson L. Falcao-Filho, Chien-Jen Lai, Kyung-Han Hong, Tso Yee Fan
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Publication number: 20110140009Abstract: Extreme ultraviolet radiation is generated based on high-order harmonic generation. First, a driver pulse is generated from a drive laser. Second, the infrared driver pulse is passed through a second harmonic generator with an output wavelength in the range from 400 to 700 nm. Third, the pulse is then passed through a gas medium, which can be inside a resonant cavity, to generate a high-order harmonic in the form of extreme ultraviolet radiation.Type: ApplicationFiled: December 13, 2010Publication date: June 16, 2011Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Franz X. Kaertner, Edilson L. Falcao-Filho, Chien-Jen Lai, Kyung-Han Hong, Tso Yee Fan