Abstract: A wafer grinding parameter optimization method and an electronic device are provided. The method includes the following. A natural frequency of a grinding wheel spindle of wafer processing equipment is obtained, and a grinding stability lobe diagram is generated accordingly. A grinding speed is selected based on a speed range of the grinding wheel spindle. Multiple grinding parameter combinations are determined based on the grinding speed. Multiple grinding simulation result combinations corresponding to the grinding parameter combinations are generated. A specific grinding parameter combination is selected based on each of the grinding simulation result combinations, and the wafer processing equipment is set accordingly.

Abstract: A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.

Abstract: A battery charger includes a first housing for holding a battery pack of a power hand tool to be charged, a second housing pivoted to the first housing and provided with a connector connectable to a power socket of a vehicle, a charging unit installed in the first housing and electrically connected to the connector for charging the inserted battery pack, a fastening device for locking the second housing to the first housing after adjustment of the angular position of the second housing relative to the first housing, and a spring member for holding the fastening device in the locking position.