Abstract: An advertisement system applicable for multiple portable devices is provided. The system is capable of performing slot machine game method using advertisement data streaming which includes: inputting user raw data of at least one portable device and advertisement data of at least one advertisement provider to a data mining module of a data analyzing module of a remote server to generate selected users and advertisement symbols; a data streaming module streaming the selected advertisement symbols to generate multiple sets of streaming advertisement symbols; matching the selected users with the multiple sets of streaming advertisement symbols in a slot machine generator; and displaying process and outcome of the slot game on a display unit of the portable device.

Abstract: A system for placement marketing includes a remote server, at least one message provider and at least one portable device. The remote server includes a memory, a data analyzer module, a data classifying module, a combination type generator and a first combination type game module. The at least one portable device transmits wirelessly a user information to the remote server. The at least one message provider transmits its message to the remote server. The portable device includes a second combination type game module for facilitating process and result of the combination type game displaying on a display of the portable device, and therefore the delivered message of the at least one message provider is shown.

Abstract: A slot machine game method using advertisement data streaming includes: inputting user raw data of at least one portable device and advertisement data of at least one advertisement provider to a data mining module of a data analyzing module of a remote server to generate selected users and advertisement symbols; a data streaming module streaming the selected advertisement symbols to generate multiple sets of streaming advertisement symbols; matching the selected users with the multiple sets of streaming advertisement symbols in a slot machine generator; and performing a slot game in a slot game module based on a result of the matching and displaying process and outcome of the slot game on a display unit of the portable device.

Abstract: The communication device(such as mobiles, computers etc.) comprises: a processor, a storage media, a communication software, a conversation content processing module, wherein said storage media, such as cloud storages or general hard disks, is coupled with the processor; a communication software including a conversation content and a input dialog is coupled with the processor and the storage media for inputting some messages into the input dialog as the conversation content and storing the conversation content provided by the communication software in the storage media; a display coupled with the processor to display a scene of communication software. The conversation content processing module further includes four modules, and the four modules are web access module, interpose module, scheduling module and filing module, respectively.

Abstract: A semiconductor programmable device is provided. The semiconductor programmable device comprises a P-type substrate, an N-well, an NMOS capacitor and a PMOS transistor. The N-well is formed in the P-type substrate. The NMOS capacitor is configured on the P-type substrate. The PMOS transistor is configured on the N-well. A source/drain of the PMOS transistor is electrically connected to a gate of the NMOS capacitor. A control voltage is applied to a gate of the PMOS transistor. A programming voltage is applied to the source/drain of the PMOS transistor. The programming voltage is large enough to cause a breakdown of a gate oxide layer of the NMOS capacitor. The gate oxide layer of the NMOS capacitor has a thickness identical to the gate oxide layer of the PMOS transistor.

Abstract: A method for forming silicon oxide layers on silicon wafers by a wet oxidation process that utilizes a dual-stage pyrolysis is described. The process can be carried out by flowing a first H2/O2 mixture that has a first H2/O2 gas mixture ratio into a torch and then feeding water vapor generated into the wet oxidation chamber to form a first layer of silicon oxide, and then flowing a second H2/O2 mixture that has a second H2/O2 gas mixture ratio into the torch and feeding water vapor generated into the wet oxidation chamber for forming a second thickness of the silicon oxide layer. The second H2/O2 ratio is smaller than the first H2/O2 ratio by at least ⅓ of the value of the first H2/O2 ratio. For instance, when the first H2/O2 ratio used is large than 1.5, the second H2/O2 ratio used is less than 1.2. In one example, the first H2/O2 gas mixture ratio utilized is 1.8, while the second H2/O2 gas mixture ratio utilized is 1.0. It has been found that by reducing the hydrogen content, i.e.

Abstract: An apparatus and a method for oxidizing silicon substrates by either a wet oxidation or a dry oxidation process in the same oxidation chamber are provided. In the apparatus, an additional conduit is provided for evacuating any residual water vapor trapped in a conduit section between an external torch and the oxidation chamber such that residual water vapor does not flow into the oxidation chamber and cause problems for a dry oxidation process subsequently conducted. The present invention novel apparatus therefore allows thin silicon oxide films such as those used in gate oxides to be formed with high quality in the same oxidation chamber. The present invention novel apparatus further allows high quality tri-layered silicon oxide films to be formed in a dry-wet-dry oxidation process for achieving satisfactory deposition rates and high quality oxide films on the substrate.

Abstract: A method for fabricating polycide gate electrodes wherein voids at the silicide/polysilicon interface are eliminated by ion implantation is described. A layer of gate silicon oxide is grown over the surface of a semiconductor substrate. A polysilicon layer is deposited overlying the gate silicon oxide layer. A silicide layer is formed overlying the polysilicon layer. Silicon ions are implanted into the silicide layer. A hard mask layer is deposited over the silicide layer. Because of the presence of the silicon ions in the silicide layer, silicon atoms from the polysilicon layer do not diffuse into the silicide layer causing voids to form in the polysilicon layer. Therefore, the formation of silicon pits in the semiconductor substrate is prevented. The silicide, polysilicon and gate silicon oxide layers are patterned to complete fabrication of a gate electrode in the manufacture of an integrated circuit device.