Abstract: An LED driver for driving a light-emitting device (LED) includes a bridge rectifier, a current driver, and a protection circuit. The bridge rectifier includes a rectifying diode, and the bridge rectifier receives and converts an AC input power source to a DC power source having a DC current and a DC voltage. The current driver includes a constant current source. The bridge rectifier, the current driver, and the protection circuit are connected in series, and the constant current source is used to limit the magnitude of the direct current to drive the LED. The protection circuit includes a protection unit. The protection circuit connects the current driver and the LED. The LED includes a substrate and the rectifying diode, the constant current source, and the protection unit are formed together on the substrate.

Abstract: An III-nitride HEMT, including a substrate; a semiconductor epitaxial stack, formed on the substrate, including a buffer structure, a channel layer formed on the buffer structure and a barrier layer formed on the channel layer, wherein a two-dimensional electron gas is formed between the channel layer and the barrier layer; and a first electrode, a third electrode and a second electrode located in between, respectively formed on the barrier layer, wherein the semiconductor epitaxial stack includes a sheet resistance greater than 500 ?/sq, wherein there is a first minimum space between the first electrode and the second electrode, a second minimum space between the second electrode and the third electrode, and the ratio of the first minimum space to the sum of first minimum space and the second minimum space is between 0.77 and 1, wherein the second electrode includes a length greater than or equal to 9 ?m.

Abstract: An III-nitride HEMT, including a substrate; a semiconductor epitaxial stack, formed on the substrate, including a buffer structure, a channel layer formed on the buffer structure and a barrier layer formed on the channel layer, wherein a two-dimensional electron gas is formed between the channel layer and the barrier layer; and a first electrode, a third electrode and a second electrode located in between, respectively formed on the barrier layer, wherein the semiconductor epitaxial stack includes a sheet resistance greater than 500 ?/sq, wherein there is a first minimum space between the first electrode and the second electrode, a second minimum space between the second electrode and the third electrode, and the ratio of the first minimum space to the sum of first minimum space and the second minimum space is between 0.77 and 1, wherein the second electrode includes a length greater than or equal to 9 ?m.

Abstract: An LED driver for driving a light-emitting device (LED) includes a bridge rectifier, a current driver, and a protection circuit. The bridge rectifier includes a rectifying diode, and the bridge rectifier receives and converts an AC input power source to a DC power source having a DC current and a DC voltage. The current driver includes a constant current source. The bridge rectifier, the current driver, and the protection circuit are connected in series, and the constant current source is used to limit the magnitude of the direct current to drive the LED. The protection circuit includes a protection unit. The protection circuit connects the current driver and the LED. The LED includes a substrate and the rectifying diode, the constant current source, and the protection unit are formed together on the substrate.

Abstract: A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.

Abstract: A field effect transistor includes a substrate; a first semiconductor layer, disposed over the substrate; a second semiconductor layer, disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas; a p+ III-V semiconductor layer, disposed over the second semiconductor layer; and a depolarization layer, disposed between the second semiconductor layer and the p+ III-V semiconductor layer, wherein the depolarization layer includes a metal oxide layer.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.

Abstract: A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.

Abstract: A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.