Abstract: A modular multilayer deposition system includes a plurality of modular deposition chambers, including at least one parylene deposition chamber and at least one ALD deposition chamber. The parylene deposition chamber is connected in series with the ALD deposition chamber. Substrates are automatically moved from within the parylene deposition chamber to within the ALD deposition chamber or from within the ALD deposition chamber to the parylene deposition chamber.

Abstract: Described herein is a composite coating on a substrate including a parylene layer deposited on a substrate surface of a substrate, a metal oxide layer covering the parylene layer, and a metal oxide, parylene hybrid layer formed between the metal oxide layer and the parylene layer.

Abstract: A modular multilayer deposition system includes a plurality of modular deposition chambers, including at least one parylene deposition chamber and at least one ALD deposition chamber. The parylene deposition chamber is connected in series with the ALD deposition chamber. Substrates are automatically moved from within the parylene deposition chamber to within the ALD deposition chamber or from within the ALD deposition chamber to the parylene deposition chamber.

Abstract: Described herein is a multi-layer thin film stack including a first ALD layer of a first metal oxide deposited on a substrate surface of a substrate, a first parylene layer covering the first ALD layer, and a second ALD layer of a second metal oxide covering the first parylene layer. The multi-layer thin film stack further includes a second parylene layer covering the second ALD layer.

Abstract: Described herein is a composite coating on a substrate including a parylene layer deposited on a substrate surface of a substrate, a metal oxide layer covering the parylene layer, and a metal oxide, parylene hybrid layer formed between the metal oxide layer and the parylene layer.

Abstract: Described herein is a composite coating on a substrate including a first parylene layer deposited on a substrate surface of a substrate, a first metal oxide layer covering the first parylene layer, a first metal oxide, parylene hybrid layer formed between the first metal oxide layer and the first parylene layer. The composite coating further includes a second parylene layer covering the first metal oxide layer, with the first metal oxide layer interposed between the first and second parylene layers.

Abstract: Metal silicon nitride nanolaminates are formed at temperatures of 200-400 C by alternating ALD monolayers or thin CVD layers of metal nitride and silicon nitride. The silicon nitride layers are formed from a silicon halide precursor, causing nitrogen bonds to replace the halogen bonds, which is a lower-energy reaction than bonding nitrogen to elemental silicon. The silicon content, and thereby the resistivity, of the nanolaminate can be tuned by either a sub-saturation dose of the silicon halide precursor (forming ALD sub-monolayers) or by the relative number of metal nitride and silicon nitride layers. Resistivities between 1 and 500 ?·cm, suitable for ReRAM embedded resistors, can be achieved. Some of the nanolaminates can function as combination embedded resistors and electrodes.

Abstract: Steps are taken to ensure that the bulk dielectric layer exhibits a crystalline phase before the deposition of a second electrode layer. The crystalline phase of the bulk dielectric layer facilitates the crystallization of the second electrode layer at lower temperature during a subsequent anneal treatment. In some embodiments, one or more interface layers are inserted between the bulk dielectric layer and the first electrode layer and/or the second electrode layer. The interface layers may act as an oxygen sink, facilitate the crystallization of the electrode layer at lower temperature during a subsequent anneal treatment, or provide barriers to leakage current through the film stack.

Abstract: Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.

Abstract: Apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods are described. An apparatus includes a showerhead and two or more pressure-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The pressure-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such pressure-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these pressure-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

Abstract: Compound layers, such as metal silicon nitrides, are formed by ALD or CVD from precursors with incompatible reaction temperature ranges. The substrate is held at a temperature within the lower reaction temperature range (e.g., that of a metal precursor). The low-temperature precursor and its reactant react to form an ALD monolayer or thin CVD layer. The high-temperature precursor and its reactant are pulsed in the chamber, and the substrate is irradiated with ultraviolet light. The ultraviolet light adds energy to the system to overcome the reaction barrier despite the substrate temperature being below the minimum reaction temperature of the high-temperature precursor.

Abstract: A protective coating for an electronic device, such as a coating that is substantially impermeable to moisture and oxygen, comprises an ultra-thin film comprising a plurality of sub-layers formed by atomic layer deposition (ALD) processes. Low temperature ALD processes may be used to form the sub-layers of the protective coating. The density of the protective film may be enhanced with energy, to which the protective coating or sub-layers thereof may be exposed during deposition or intermittently during the deposition process. ALD apparatuses that are equipped to perform the disclosed processes are also disclosed, as are electronic devices that include the disclosed protective coatings.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor.

Abstract: Embodiments described herein provide systems and methods for performing vapor deposition processes on substrates. A housing defining a processing chamber is provided. A substrate support is positioned within the processing chamber and configured to support a substrate. A fluid supply system including a plurality precursor sources is included. A fluid conduit assembly is coupled to the fluid supply system and configurable to selectively expose a first site-isolated region defined on the substrate to the respective precursors of a first and a second of the plurality of precursor sources and selectively expose a second site-isolated region defined on the substrate to the respective precursors of a third and a fourth of the plurality of precursor sources.

Abstract: Ternary oxides, nitrides and oxynitrides of the form (a)(b)OxNy are formed by ALD or CVD when the reaction temperature ranges of the (a) precursor and the (b) precursor do not overlap. Chemically-reacted sub-layers, e.g., (a)OxNy, are formed by reacting the lower-temperature precursor with O and/or N at a temperature within its reaction range. Physisorbed sub-layers (e.g., (b) or (b)+ligand) are formed between the chemically-reacted sub-layers by allowing the higher-temperature precursor to physically adsorb to the low-temperature surface. When the desired sub-layers are formed, the substrate is heated to a temperature at which the higher-temperature precursor reacts (optionally in the presence of more O and/or N) to form (a)(b)OxNy. Quarternary and more complex compounds can be similarly formed.

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor.

Abstract: Provided are methods of forming nitrides at low substrate temperatures, such as less than 500° C. or even less than 400° C. The nitrides can be formed using atomic layer deposition (ALD), chemical vapor deposition (CVD), and other like techniques. The low substrate temperatures allow using various temperature sensitive precursors, such as Tetrakis(DiMethylAmino)Hafnium (i.e., TDMAHf) or TertiaryButylimido-Tris(DiEthylamino)Tantalum (i.e., TBTDET), to form nitrides of components provided by these precursors. Furthermore, the low temperatures preserve other structures present on the substrate prior to forming the nitride layers. Nitrogen-containing precursors with low dissociation energy are used in these methods. Some examples of such nitrogen-containing precursors include hydrazine (N2H4), diazene (N2H2), triazene (N3H3), triazane (N3H5), alkyl-substituted variations thereof, and salts thereof. Also provided are methods of forming oxy-nitrides using low substrate temperatures.

Abstract: A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon.

Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.