Abstract: A measuring equipment and a measuring method for measuring electronic properties and optical properties are disclosed. The measuring equipment is used to measure electronic and optical properties. The measuring equipment includes a test socket, a light-emitting element circuit, an optical device, a signal conversion circuit, and a control host. The test socket has measuring probes. The test socket tests the electronic properties of the semiconductor device through the measuring probes. The light-emitting element circuit has a light-emitting element. The optical device measures the optical properties of the light-emitting element. The signal conversion circuit converts the electronic properties to an electronic signal. The control host analyzes and stores the electronic signal and the optical properties.

Abstract: The invention relates to methods and kits for determining a SARS-CoV-2 strain in a sample. The invention further provides methods and kits for detecting a single nucleotide polymorphism (SNP) in a target nucleic acid, wherein the target nucleic acid is a SARS-CoV-2 nucleic acid. The invention further provides methods and kits for detecting one or more antibody biomarkers in a sample.

Abstract: A method of removing copper oxide from copper surfaces is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

Abstract: A method of removing copper oxide from copper surfaces is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

Abstract: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

Abstract: A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

Abstract: A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (?) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.

Abstract: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

Abstract: A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

Abstract: A method of rejuvenating a Ru plating seed layer during write pole fabrication in a PMR head is disclosed that involves forming an opening in a mold forming layer. A Ru seed layer is deposited by CVD within the opening and on a top surface of the mold forming layer. The substrate with the Ru seed layer is immersed in an acidic solution and an electric potential is applied for 1 to 2 minutes such that hydrogen is generated to reduce ruthenium oxides to Ru metal on the seed layer surface in an activation step. One or more surfactants are used to improve wettability of the Ru layer. The substrate is transferred directly to an electroplating solution without drying following the activation step to minimize exposure to oxygen that could regenerate oxides on the surface of the Ru layer. As a result, write pole voids and delamination are significantly reduced.

Abstract: A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (?) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.

Abstract: A longitudinal bias structure for use in a GMR device is described. Improved magnetic properties of the bias structure are achieved by inserting an extra layer between the seed layer and the bias layer. This layer has lattice constants that are intermediate between those of the seed and bias layers thereby improving the crystallinity of the latter. Specifically, a layer of chromium-cobalt-tantalum is inserted between a seed layer of chromium, or chromium-titanium, and a hard magnetic (bias) layer of cobalt-chromium-platinum or cobalt-platinum. About 20 Angstroms is optimum for the thickness of this layer. Data is presented showing that significant improvements in coercivity and hysteresis loop squareness are obtained.

Abstract: Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.

Abstract: A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.