Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: In this patent, a high energy and power density supercapacitor was invented. A coin cell with supercapacitor includes a spring lamination, a working electrode, a counter electrode, a separator, and an Organic electrolyte. The working and counter electrodes were Activated carbon/N-doping porous graphene/binder coated on Aluminum substrate. The separator was from Nippon Kodoshi Corporation. The Organic electrolyte was 1M TEABF4/PC. The method of producing N-doping porous graphene included the following steps: Step 1: Graphite oxide (GO) was transferred into the furnace. Step 2: Inject 50 c.c./min gas flow of Nitrous oxides for one hour. Step 3: Intensify 40 Celsius degrees/min to 900 Celsius degrees and after holding for one hour, lower the temperature naturally to the room temperature, it can be prepared into N-doping porous graphene. In this patent, the capacitance of the supercapacitor is 122 F/g and the power density is 31 kW/Kg.

Abstract: A high volumetric energy and power density supercapacitor is provided. This supercapacitor includes a coin cell, a spring lamination, a working electrode, a counter electrode, a separator, and an ionic liquid electrolyte. The working and counter electrodes are N—P doping porous graphene coated on Al substrate. The ionic liquid electrolyte is EMI-FSI. The method of producing N—P doping porous graphene includes following steps: S1: Graphite oxide is quickly transferred into the furnace, which had been held at 300° C. and the porous graphene can be produced. S2: The porous graphene and red phosphorus are put together in the evacuated tube furnace and heated to 700° C. for 1 hr. S3: Heated to 800° C. for 30 min in a mixed argon and ammoniac atmosphere and then the N—P doping porous graphene can be made. The capacitance of the supercapacitor is 105 F/g and the volumetric power density is 1.19 kW/L.

Abstract: Conductive carbon adhesive is an active technology researched in the world, and its application is quite wide, such as liquid crystal display (TFTLCD), organic light emitting diode (OLED), radio frequency identification system (RFID), antenna, solar cell, sensing and electronic components for devices. Since the two-dimensional carbon material used for the conductive carbon adhesive is easily stacked and agglomerated in the polymer, the present invention adds nano-fillers to the carbon material to prepare a three-dimensional conductive carbon adhesive to prevent carbon material agglomeration.

Abstract: Conductive carbon adhesive is an active technology researched in the world, and its application is quite wide, such as liquid crystal display (TFTLCD), organic light emitting diode (OLED), radio frequency identification system (RFID), antenna, solar cell, sensing and electronic components for devices. Since the two-dimensional carbon material used for the conductive carbon adhesive is easily stacked and agglomerated in the polymer, the present invention adds nano-fillers to the carbon material to prepare a three-dimensional conductive carbon adhesive to prevent carbon material agglomeration.

Abstract: In this patent, a high energy and power density supercapacitor was invented. A coin cell with supercapacitor includes a spring lamination, a working electrode, a counter electrode, a separator, and an Organic electrolyte. The working and counter electrodes were Activated carbon/N-doping porous graphene/binder coated on Aluminum substrate. The separator was from Nippon Kodoshi Corporation. The Organic electrolyte was 1M TEABF4/PC. The method of producing N-doping porous graphene included the following steps: Step 1: Graphite oxide (GO) was transferred into the furnace. Step 2: Inject 50 c.c./min gas flow of Nitrous oxides for one hour. Step 3: Intensify 40 Celsius degrees/min to 900 Celsius degrees and after holding for one hour, lower the temperature naturally to the room temperature, it can be prepared into N-doping porous graphene. In this patent, the capacitance of the supercapacitor is 122 F/g and the power density is 31 kW/Kg.

Abstract: A high volumetric energy and power density supercapacitor is provided. This supercapacitor includes a coin cell, a spring lamination, a working electrode, a counter electrode, a separator, and an ionic liquid electrolyte. The working and counter electrodes are N-P doping porous graphene coated on Al substrate. The ionic liquid electrolyte is EMI-FSI. The method of producing N-P doping porous graphene includes following steps: S1: Graphite oxide is quickly transferred into the furnace, which had been held at 300° C. and the porous graphene can be produced. S2: The porous graphene and red phosphorus are put together in the evacuated tube furnace and heated to 700° C. for 1 hr. S3: Heated to 800° C. for 30 min in a mixed argon and ammoniac atmosphere and then the N-P doping porous graphene can be made. The capacitance of the supercapacitor is 105 F/g and the volumetric power density is 1.19 kW/L.

Abstract: A silver particles manufacturing method comprises following steps: providing a silver containing compound; providing an organic solution; adding the silver containing compound into the organic solution, to perform ultrasonic vibrations or a heating process until the silver containing compound is dissolved completely into the organic solution, to form a silver ion solution; performing the ultrasonic vibrations or the heating process, and then let the solution settle down for a period, to form a silver particles synthesized solution; and placing the silver particles synthesized solution into a centrifuge to perform centrifugation and separation, to obtain ?m-scale silver particles and nm-scale silver particles. The silver particles manufacturing method has the advantages of low pollution, low cost, high yield, and mass production.

Abstract: A copper-silver dual-component metal electroplating solution includes copper methanesulfonate, silver methanesulfonate, methanesulfonic acid, chlorine ions, and water. An electroplating method for forming a copper-silver dual-component metal by using such an electroplating solution, the steps of which includes (a) contacting the copper-silver dual-component metal electroplating solution with a substrate; (b) applying an operating voltage, the current density of which is controlled to be between 0.1 and 2 ASD in order to carry out electroplating on the substrate. Therefore, the electroplating solution has environmental characteristics, such as less poisoning hazards, through the design of methanesulfonic acid and methanesulfonate electroplating solution. Also, the potential and the current are adjusted during the electroplating in order to obtain a copper-silver dual-component metal plating layer with a specific silver content.

Abstract: A copper-silver dual-component metal electroplating solution includes copper methanesulfonate, silver methanesulfonate, methanesulfonic acid, chlorine ions, and water. An electroplating method for forming a copper-silver dual-component metal by using such an electroplating solution, the steps of which includes (a) contacting the copper-silver dual-component metal electroplating solution with a substrate; (b) applying an operating voltage, the current density of which is controlled to be between 0.1 and 2 ASD in order to carry out electroplating on the substrate. Therefore, the electroplating solution has environmental characteristics, such as less poisoning hazards, through the design of methanesulfonic acid and methanesulfonate electroplating solution. Also, the potential and the current are adjusted during the electroplating in order to obtain a copper-silver dual-component metal plating layer with a specific silver content.

Abstract: A device for producing a continuous-growth type large-area transparent and conductive graphene film, comprising: a heating unit, used to heat a substrate; a feed-in unit, used to transform a rolling type substrate into a plane type substrate, while the substrate is transported from the feed-in unit to the heating unit; a receiving unit, used to transform the plane type substrate into the rolling type substrate; an atmosphere unit, used to control input gas flow ratio; and a plasma unit, used to turn the input gas into plasma, while a carbon source gas flows from the atmosphere unit, to the heating unit, through the plasma unit. As such, when the plane type substrate is transported through the heating unit, the transparent and conductive graphene film can be formed on the plane type substrate.

Abstract: A thermal conductive plastic material, comprising: a plastic solution; a first thermal conductive material, filled and distributed in the plastic solution, being processed by an Atmospheric Pressure Plasma (APP) technology, and having its surface provided with hydrophilic functional groups; and a second thermal conductive material, filled and distributed in the plastic solution, being processed by the Atmospheric Pressure Plasma (APP) technology or chemical modification, and having its surface provided with hydrophilic functional groups. Wherein, the first thermal conductive material is formed by ceramic powders, the second thermal conductive material is formed by carbon-containing ingredient, while the first thermal conductive material and the second thermal conductive material are in touch with each other.

Abstract: A silver particles manufacturing method comprises following steps: providing a silver containing compound; providing an organic solution; adding the silver containing compound into the organic solution, to perform ultrasonic vibrations or a heating process until the silver containing compound is dissolved completely into the organic solution, to form a silver ion solution; performing the ultrasonic vibrations or the heating process, and then let the solution settle down for a period, to form a silver particles synthesized solution; and placing the silver particles synthesized solution into a centrifuge to perform centrifugation and separation, to obtain ?m-scale silver particles and nm-scale silver particles. The silver particles manufacturing method has the advantages of low pollution, low cost, high yield, and mass production.

Abstract: A system in package (SIP) structure, an electroplating module thereof and a memory storage device are provided. The SIP structure includes a first layout layer, a second layout layer and a rewritable non-volatile memory module. The first layout layer includes a first pad and a wire. The first pad is close to a first side of the first layout layer, and the first pad is configured to couple to a ground voltage. One terminal of the wire is coupled to the first pad, and another terminal of the wire is coupled to an opening of the SIP structure, wherein the opening is located at a second side of the first layout layer opposite to the first side, and the opening is configured to couple to an external voltage.

Abstract: A system in package (SIP) structure, an electroplating module thereof and a memory storage device are provided. The SIP structure includes a first layout layer, a second layout layer and a rewritable non-volatile memory module. The first layout layer includes a first pad and a wire. The first pad is close to a first side of the first layout layer, and the first pad is configured to couple to a ground voltage. One terminal of the wire is coupled to the first pad, and another terminal of the wire is coupled to an opening of the SIP structure, wherein the opening is located at a second side of the first layout layer opposite to the first side, and the opening is configured to couple to an external voltage.

Abstract: The invention discloses a processing method and device for image encryption and decryption. The processing method is first to obtain at least one main film and at least one subsidiary film. Then, when the at least one main film and the at least one subsidiary film are playing, the video signals will be synchronously inputted into the composite video-signal processing unit for processing composite video signals. Next, when the video signals of the at least one main film and at least one subsidiary film are executing the composite video signal process, a markup signal is added into each field of the main film synchronously. Thus, an encrypted composite film is completed. In addition, after the analog video signal in the encrypted composite film has been converted into a digital video signal output through the analog/digital converter, the digital video signal output will be stored in the memory unit. Then, the detection control unit will determine whether the data in the memory should be updated.

Abstract: An automatic radio frequency signal switching circuit is equipped with a plurality of AV input terminals and adopts an analog/digital adapter to transform all respective input analog signals into high level digital signals and a central processor is used to memorize the sequential orders of the respective AV signals which are sequentially output in a last-in-first-out manner to a television. At the same time, the central processor shuts off the ANT/CATV signal amplifier and the RF switch thereof so as to effect automatic switching operation. When no AV signals from AV equipment are being input, the central processor will instantly transmit another set of high electric level signals to the ANT/CATV signal amplifier and a power source of the RF switch thereof and the ANT/CATV signals are delivered to a television via the RF amplifier and the RF switch thereof whereby effect automatic RF switching operation.