Patents by Inventor Chien-Liang Wu

Chien-Liang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220202990
    Abstract: A tissue scaffold for use in a tendon and/or ligament is provided, which includes a weave formed by interlacing warp yarns and weft yarns, wherein the warp yarns include a plurality of fibers with an alternative shaped cross section structure, and the weave includes: a main body area with a bioactive component formed on the fiber surface, and a fixed area comprises the weft yarn having a bioceramic material. The tissue scaffold prepared in the present disclosure has the characteristics of stimulating the growth of tissues and inducing tissue repair, effectively improving the ability of tissue regeneration and bone healing, and is beneficial to the reconstruction of the tendon and/or ligament.
    Type: Application
    Filed: December 29, 2020
    Publication date: June 30, 2022
    Inventors: Hsin-Hsin Shen, Pei-I Tsai, Chih-Chieh Huang, Chien-Cheng Tai, Yi-Hung Wen, Jeng-Liang Kuo, Chun-Hsien Ma, Lih-Tao Hsu, Shin-I Huang, Kuo-Yi Yang, Tsung-Hsien Wu
  • Publication number: 20220181478
    Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).
    Type: Application
    Filed: February 22, 2022
    Publication date: June 9, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Hsing Lee, Yi-Chung Sheng, Sheng-Yuan Hsueh, Chih-Kai Kang, Guan-Kai Huang, Chien-Liang Wu
  • Publication number: 20220173236
    Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. A fluoride ion doped region is formed right below the main gate in the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).
    Type: Application
    Filed: February 21, 2022
    Publication date: June 2, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Hsing Lee, Yi-Chung Sheng, Sheng-Yuan Hsueh, Chih-Kai Kang, Guan-Kai Huang, Chien-Liang Wu
  • Patent number: 11296214
    Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: April 5, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Hsing Lee, Yi-Chung Sheng, Sheng-Yuan Hsueh, Chih-Kai Kang, Guan-Kai Huang, Chien-Liang Wu
  • Publication number: 20220093584
    Abstract: A resistor-transistor-logic (RTL) circuit with GaN structure, including a GaN layer, a AlGaN barrier layer on the GaN layer, multiple p-type doped GaN capping layers on the AlGaN barrier layer, wherein parts of the p-type doped GaN capping layers in a high-voltage region and in a low-voltage region convert the underlying GaN layer into gate depletion areas, the GaN layer not covered by the p-type doped GaN capping layers in a resistor region becomes a 2DEG resistor.
    Type: Application
    Filed: October 21, 2020
    Publication date: March 24, 2022
    Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Chien-Liang Wu, Te-Wei Yeh, Yi-Chun Chen
  • Publication number: 20220059528
    Abstract: A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.
    Type: Application
    Filed: November 2, 2021
    Publication date: February 24, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yung-Chen Chiu, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chien-Liang Wu, Chih-Kai Kang, Guan-Kai Huang
  • Publication number: 20220029005
    Abstract: A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.
    Type: Application
    Filed: August 16, 2020
    Publication date: January 27, 2022
    Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Chien-Liang Wu, Kuo-Yu Liao
  • Publication number: 20210391383
    Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).
    Type: Application
    Filed: July 8, 2020
    Publication date: December 16, 2021
    Inventors: Kuo-Hsing Lee, Sheng-Yuan Hsueh, Te-Wei Yeh, Chien-Liang Wu
  • Patent number: 11195831
    Abstract: A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: December 7, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yung-Chen Chiu, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chien-Liang Wu, Chih-Kai Kang, Guan-Kai Huang
  • Publication number: 20210082911
    Abstract: A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.
    Type: Application
    Filed: October 9, 2019
    Publication date: March 18, 2021
    Inventors: Yung-Chen Chiu, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chien-Liang Wu, Chih-Kai Kang, Guan-Kai Huang
  • Publication number: 20210020769
    Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).
    Type: Application
    Filed: July 29, 2019
    Publication date: January 21, 2021
    Inventors: Kuo-Hsing Lee, Yi-Chung Sheng, Sheng-Yuan Hsueh, Chih-Kai Kang, Guan-Kai Huang, Chien-Liang Wu
  • Publication number: 20210016029
    Abstract: Disclosed herein is a portable ventilator and a method for providing an oscillatory flow to a subject in need thereof. The method comprises: (a) forming a gas mixture comprising pure oxygen and air; (b) converting the gas mixture into the oscillatory flow by applying thereto a predetermined oscillatory frequency and a predetermined ventilatory duration; (c) outputting the oscillatory flow of the step (b) at a first jet pressure, in which the outputted oscillatory flow has a first flow rate; and (d) modulating the outputted oscillatory flow of the step (c) by, (i) varying the respective amounts of the pure oxygen and the air in the gas mixture; or (ii) varying the predetermined ventilatory duration of the step (b), in which if the fist jet pressure is smaller than the predetermined jet pressure, then decreases the predetermined ventilatory duration; or if the first jet pressure is greater than the predetermined jet pressure, then increases the predetermined ventilatory duration.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 21, 2021
    Applicants: MacKay Memorial Hospital, National Chiao Tung University
    Inventors: Hsu-Tah KUO, Chien-Liang WU, Wen-Jui WU, Yu-Te LIAO, Shao-Yung LU
  • Patent number: 10459245
    Abstract: A flexible temple structure includes a lens surface, a frame and two temples. The structure further includes two first connecting portions respectively provided on each of two corresponding ends of the frame, and two second connecting portions individually provided at one end of each of the temple. Each of the first connecting portion includes a main body, a projecting block, and a shaft post. Each second connecting portion includes an embedded mouth, an accommodating space, and a guide slot. The guide slot includes a fastening section, and a securing section connected with the fastening section. The projecting block/the shaft post are allowed to enter the accommodating space/the guide slot through the embedded mouth, and an appropriate resistance force is provided by the fastening section to allow the shaft post being operably retained into the securing section and the shaft post being pivoted in the securing section.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: October 29, 2019
    Inventor: Chien-Liang Wu
  • Patent number: 10429668
    Abstract: A screwless eyeglasses frame includes a lens, a rim and two temples. The screwless eyeglasses frame further includes two first connecting portions respectively disposed at two ends of the rim, and two second connecting portions individually disposed at one end of each of the temples. Each of the first connecting portions includes a first body, an accommodating slot, a pivotal rotation channel, a sliding channel, and a positioning groove. Each of the second connecting portions includes a second body, a protruding block, a pivotal rotation axis and a sliding block. The pivotal rotation axis is able to sequentially enter the sliding channel, the pivotal rotation channel and the positioning groove. When the pivotal rotation axis is abutted against a lower end of the positioning groove, the second connecting portion is able to pivotally rotate correspondingly to the first connecting portion.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: October 1, 2019
    Inventor: Chien-Liang Wu
  • Publication number: 20190212576
    Abstract: A screwless eyeglasses frame includes a lens, a rim and two temples. The screwless eyeglasses frame further includes two first connecting portions respectively disposed at two ends of the rim, and two second connecting portions individually disposed at one end of each of the temples. Each of the first connecting portions includes a first body, an accommodating slot, a pivotal rotation channel, a sliding channel, and a positioning groove. Each of the second connecting portions includes a second body, a protruding block, a pivotal rotation axis and a sliding block. The pivotal rotation axis is able to sequentially enter the sliding channel, the pivotal rotation channel and the positioning groove. When the pivotal rotation axis is abutted against a lower end of the positioning groove, the second connecting portion is able to pivotally rotate correspondingly to the first connecting portion.
    Type: Application
    Filed: January 8, 2018
    Publication date: July 11, 2019
    Inventor: CHIEN-LIANG WU
  • Publication number: 20180335644
    Abstract: A flexible temple structure includes a lens surface, a frame and two temples. The structure further includes two first connecting portions respectively provided on each of two corresponding ends of the frame, and two second connecting portions individually provided at one end of each of the temple. Each of the first connecting portion includes a main body, a projecting block, and a shaft post. Each second connecting portion includes an embedded mouth, an accommodating space, and a guide slot. The guide slot includes a fastening section, and a securing section connected with the fastening section. The projecting block/the shaft post are allowed to enter the accommodating space/the guide slot through the embedded mouth, and an appropriate resistance force is provided by the fastening section to allow the shaft post being operably retained into the securing section and the shaft post being pivoted in the securing section.
    Type: Application
    Filed: May 17, 2017
    Publication date: November 22, 2018
    Inventor: CHIEN-LIANG WU
  • Patent number: 9721514
    Abstract: A method for driving a reflective LCD panel is provided. The driving method includes following steps: the reflective LCD panel is driven by a driving signal with alternate positive and negative polarities, wherein the driving signal has positive polarity for a first driving duration and the driving signal has negative polarity for a second driving duration; a color beam is provided to irradiate the reflective LCD panel during a partial time period of the first driving duration; and the color beam is provided to irradiate the reflective LCD panel during a partial time period of the second driving duration.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: August 1, 2017
    Assignee: Himax Display, Inc.
    Inventors: Yuet-Wing Li, Chien-Liang Wu, Kuan-Hsu Fan-Chiang
  • Patent number: 8930623
    Abstract: After a file is stored in a storage device, the file is segmented into a first segment and a second segment, the latter of which is relocated to a removable security device only when the removable security device is connected to the storage device. After the removable security device is removed from the storage device, as long as the removable security device is kept by the owner of the file, the file cannot be accessible for someone other than the owner even if said someone takes the storage device. Security of the file is thus assured.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: January 6, 2015
    Assignee: Transcend Information, Inc.
    Inventors: Chien-Liang Wu, Kuan-Jen Chen
  • Patent number: 8772071
    Abstract: A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: July 8, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Jun-Chin Liu, Yu-Hung Chen, Chien-Liang Wu, Yu-Ru Chen, Yu-Ming Wang
  • Publication number: 20130346691
    Abstract: After a file is stored in a storage device, the file is segmented into a first segment and a second segment, the latter of which is relocated to a removable security device only when the removable security device is connected to the storage device. After the removable security device is removed from the storage device, as long as the removable security device is kept by the owner of the file, the file cannot be accessible for someone other than the owner even if said someone takes the storage device. Security of the file is thus assured.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 26, 2013
    Inventors: Chien-Liang Wu, Kuan-Jen Chen