Abstract: A semiconductor memory apparatus and a testing method thereof are provided. The semiconductor memory apparatus includes a memory chip and a memory controller. The memory controller is configured to detect an initial test voltage of a target memory cell corresponding to a tailing bit in a main array of the memory chip. After the memory chip is idle for a first time, the memory controller detects a first test voltage of the target memory cell and compares it with a current comparison voltage to determine whether a first stage test is passed. In a case of passing the first stage test, after the memory chip is idle for a second time, the memory controller detects a second test voltage of the target memory cell and compares it with the current comparison voltage to determine whether a second stage test is passed. The comparison voltage is dynamically updated in response to the time the memory chip is idle.

Abstract: This disclosure provides a hand tracking device. The hand tracking device includes a storage circuit and a processor. The storage circuit stores a program code. The processor is coupled to the storage circuit and accesses the program code. The processor is configured to obtain a hand motion curve of a hand during a period of time. The processor is configured to obtain an object motion curve of an object during the period of time. The processor is configured to determine whether the hand is holding the object based on the hand motion curve and the object motion curve.

Abstract: A semiconductor memory apparatus and a testing method thereof are provided. The semiconductor memory apparatus includes a memory chip and a memory controller. The memory controller is configured to detect an initial test voltage of a target memory cell corresponding to a tailing bit in a main array of the memory chip. After the memory chip is idle for a first time, the memory controller detects a first test voltage of the target memory cell and compares it with a current comparison voltage to determine whether a first stage test is passed. In a case of passing the first stage test, after the memory chip is idle for a second time, the memory controller detects a second test voltage of the target memory cell and compares it with the current comparison voltage to determine whether a second stage test is passed. The comparison voltage is dynamically updated in response to the time the memory chip is idle.

Abstract: A hand pose construction method is disclosed. The hand pose construction method includes the following operations: capturing an image of a hand of a user from a viewing angle of a camera, wherein a hand image of the hand of the user is occluded within the image; obtaining a wrist position and a wrist direction of a wrist of the user according to a movement data of a tracking device wear on the wrist of the user; obtaining several visible feature points of the hand of the user from the image; and constructing a hand pose of the hand of the user according to the several visible feature points, the wrist position, the wrist direction, and a hand pose model.

Abstract: A tracking system is provided. The tracking system includes a three degree-of-freedom (3DoF) device, a camera, and a processor. The 3DoF device is adapted to be mounted on a control device worn or hold on a body portion of a user. The 3DoF device is configured to obtain sensor data from a 3DoF sensor of the 3DoF device. The camera is configured to obtain camera data. The camera data comprises an image of the body portion of the user or the control device as a tracking target. The processor is configured to: track the tracking target to generate a tracking result based on the sensor data and the camera data; determine the tracking target being static or not based on the tracking result; determine a target pose of the tracking target based on the tracking result; and calibrate an accumulative error of the 3DoF sensor in background.

Abstract: The embodiments of the disclosure provide a method for improving quality of a visual content, a host, and a computer readable storage medium. The method includes: determining a first gesture of a first hand and accordingly providing a first hand object in the visual content; determining a second gesture of a second hand and accordingly providing a second hand object in the visual content; in response to determining that the first gesture and the second gesture respectively correspond to a first predetermined gesture and a second predetermined gesture, determining a specific distance between the first gesture and the second gesture; and in response to determining that the specific distance is smaller than a distance threshold, refining the first hand object and the second hand object.

Abstract: A write method for a resistive memory including a storage array, a control circuit and an access circuit is provided. The control circuit receives an external command to activate the access circuit to access the storage array. The write method includes determining whether the external command is ready to perform a write operation for the storage array; generating a first operation voltage group to the access circuit when the external command does not perform the write operation for the storage array; reading a count value of a block that corresponds to a write address when the external command performs the write operation for the storage array, wherein the count value indicates the number of times that the block corresponding to the write address performs the write operation; and generating a second operation voltage group to the access circuit according to the count value of the block.

Abstract: A composite filament artificial leather includes a composite filament textile and an elastomer film. The composite filament textile includes a plurality of composite filaments. One of the composite filaments includes at least one core portion, a sheath portion and at least one gap structure. The sheath portion is disposed around the core portion. The gap structure is between the core portion and the sheath portion. The elastomer film is bonded with the composite filament textile.

Abstract: A memory device includes: a resistive switching layer, a conductive pillar, a barrier layer, a word line, a plurality of resistive layers, and a plurality of bit lines. The resistive switching layer is shaped as a cup and has an inner surface to define an opening. The conductive pillar is disposed in the opening. The barrier layer is disposed between the resistive switching layer and the conductive pillar. The word line is electrically connected to the conductive pillar. The resistive layers are respectively distributed on an outer surface of the resistive switching layer. The bit lines are electrically connected to the resistive layers, respectively.

Abstract: A memory device includes: a resistive switching layer, a conductive pillar, a barrier layer, a word line, a plurality of resistive layers, and a plurality of bit lines. The resistive switching layer is shaped as a cup and has an inner surface to define an opening. The conductive pillar is disposed in the opening. The barrier layer is disposed between the resistive switching layer and the conductive pillar. The word line is electrically connected to the conductive pillar. The resistive layers are respectively distributed on an outer surface of the resistive switching layer. The bit lines are electrically connected to the resistive layers, respectively.

Abstract: A finger-gesture detection device adapted for a control handle includes a grip portion. The finger-gesture detection device includes a first wearing portion, a plurality of second wearing portions, and a plurality of first sensors. The first wearing portion is adapted to detachably surround the grip portion of the control handle. When the grip portion connects the first wearing portion, the grip portion is positioned on one side of the first wearing portion. The second wearing portions are each independently connected to the first wearing portion. When a force is applied to one of the second wearing portions, the corresponding second wearing portion moves toward the grip portion. The first sensors are respectively disposed on the second wearing portions for detecting positions or movements of the second wearing portions relative to the grip portion. A control assembly and a correction method are also proposed.

Abstract: The present invention is related to a high frequency easy melting multiple layered structure, which includes a high frequency easy melting coating layer; a high frequency easy melting adhesive layer installed below the high frequency easy melting coating layer and a high frequency easy melting thermoplastic polyurethane (TPU) substrate placed below the high frequency easy melting adhesive layer. They serve to reduce the energy and time period in the high frequency melting and connection so as to promote producing speed and capacity effectively.

Abstract: A write method for a resistive memory including a storage array, a control circuit and an access circuit is provided. The control circuit receives an external command to activate the access circuit to access the storage array. The write method includes determining whether the external command is ready to perform a write operation for the storage array; generating a first operation voltage group to the access circuit when the external command does not perform the write operation for the storage array; reading a count value of a block that corresponds to a write address when the external command performs the write operation for the storage array, wherein the count value indicates the number of times that the block corresponding to the write address performs the write operation; and generating a second operation voltage group to the access circuit according to the count value of the block.

Abstract: A resistive memory including a storage array, a storage circuit, a control circuit, a voltage generation circuit and an access circuit is provided. The storage array includes a plurality of blocks. Each block includes a plurality of memory cells. The storage circuit stores a plurality of count values. Each of the count values indicates the number of times that a corresponding block performs a write operation. The control circuit generates a control signal according to the count values when an external command is a write command. The voltage generation circuit provides an operation voltage group according to the control signal. The access circuit accesses the storage array according to the operation voltage group.

Abstract: A computer-implement operating method includes periodically generating sensing data by determining a triggered area of each of the sensors of a surface on which each of the sensors disposed; grouping effective sensors among the sensors into a plurality of sensor groups respectively corresponding to the fingers; obtaining a bending angle of one finger among the fingers according to the sensing values of the sensing data of all effective sensors in one sensor group corresponding to the said one finger among the sensor groups; and bending one virtual finger corresponding to the said one finger among virtual fingers of a virtual hand rendered in a virtual space corresponding to the electronic system according to the obtained bending angle of the said one finger, so as to render the virtual hand having a gesture matching to a gesture of the hand sensed by the controller.

Abstract: A finger-gesture detection device adapted for a control handle includes a grip portion. The finger-gesture detection device includes a first wearing portion, a plurality of second wearing portions, and a plurality of first sensors. The first wearing portion is adapted to detachably surround the grip portion of the control handle. When the grip portion connects the first wearing portion, the grip portion is positioned on one side of the first wearing portion. The second wearing portions are each independently connected to the first wearing portion. When a force is applied to one of the second wearing portions, the corresponding second wearing portion moves toward the grip portion. The first sensors are respectively disposed on the second wearing portions for detecting positions or movements of the second wearing portions relative to the grip portion. A control assembly and a correction method are also proposed.

Abstract: A resistive memory and a method for writing data thereof are provided. The method for writing data includes: receiving a write-in data and generating an inverted write-in data; reading a current data in a plurality of selected memory cells; comparing the current data with the write-in data and the inverted write-in data; selecting the write-in data or the inverted write-in data to generate a final data according to a comparison result; and writing the final data into the selected memory cells.

Abstract: A finger-gesture detection device adapted for a control handle includes a grip portion. The finger-gesture detection device includes a first wearing portion, a plurality of second wearing portions, and a plurality of first sensors. The first wearing portion is adapted to detachably surround the grip portion of the control handle. When the grip portion connects the first wearing portion, the grip portion is positioned on one side of the first wearing portion. The second wearing portions are each independently connected to the first wearing portion. When a force is applied to one of the second wearing portions, the corresponding second wearing portion moves toward the grip portion. The first sensors are respectively disposed on the second wearing portions for detecting positions or movements of the second wearing portions relative to the grip portion. A control assembly and a correction method are also proposed.

Abstract: A resistive memory and a method for writing data thereof are provided. The method for writing data includes: receiving a write-in data and generating an inverted write-in data; reading a current data in a plurality of selected memory cells; comparing the current data with the write-in data and the inverted write-in data; selecting the write-in data or the inverted write-in data to generate a final data according to a comparison result; and writing the final data into the selected memory cells.

Abstract: A power on reset method for a resistive memory storage device is provided and includes performing a forming procedure on a memory cell of the resistive memory storage device. The forming procedure includes applying at least one forming voltage and at least one reset voltage to the memory cell. The forming procedure further includes a thermal step. The step of applying at least one reset voltage to the memory cell may be preformed before or after the thermal step. After one forming voltage is applied, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. After the thermal step, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. In addition, after one reset voltage is applied, if the memory cell passes verification, the next reset voltage is not applied to the memory cell.