Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: A device includes first and second dies and a seal ring. The first die includes a top dielectric layer. The second die is over the first die. The second die includes a bottom dielectric layer bonded to the top dielectric layer of the first die at an interface between the first die and the second die. The seal ring extends from the first die to the second die through the interface. A portion of the top dielectric layer of the first die and a portion of the bottom dielectric layer of the second die are separated by a gap outside the seal ring.

Abstract: A device includes first and second dies and a seal ring. The first die includes a top dielectric layer. The second die is over the first die. The second die includes a bottom dielectric layer bonded to the top dielectric layer of the first die at an interface between the first die and the second die. The seal ring extends from the first die to the second die through the interface. A portion of the top dielectric layer of the first die and a portion of the bottom dielectric layer of the second die are separated by a gap outside the seal ring.

Abstract: A hydroponic device includes a water tank, a drain pan, a hydroponic module and a light emitting diode module. The water tank delivers water to the drain pan via a drain pump. The water is then dispensed to each pot body of the hydroponic module. Each pot body includes an inner pot and an outer pot. Water inside the inner pot will flow to the outer pot through the draining hole. Water will flow out of an overflow outlet and re-enter the water tank if the water level is higher than the overflow outlet. The light emitting diode module is disposed above the hydroponic module.

Abstract: A semiconductor manufacturing line includes an inert environment selected from the group consisting essentially of an inert airtight wafer holder, an inert wafer transport channel, an inert production tool, an inert clean room, and combinations thereof.

Abstract: The present invention discloses a high electrochemical performance silicon/graphene composite anode structure. The electrochemical properties of silicon in the composite anode structure can be improved by graphene thin films. The thickness of the silicon thin film and the graphene thin films is less than 50 nm to prevent the composite anode structure from any volumetric change during the charge/discharge process. The manufacturing procedure starts with the formation of a Si/graphene unit layer, which includes an amorphous phase upper silicon thin film and a lower graphene thin film, on a copper foil current collector, so as to decrease the difference of conductivity between the silicon thin film and the copper foil current collector. Finally, the deposition is concluded with the formation of a graphene thin film on the topmost surface of the silicon thin film to prevent the surface of the anode structure from oxidation.

Abstract: A portable computer includes a monitor, a base, and a hinge. The hinge includes a shaft sleeve, a rotary shaft, a driven element, and a resistance structure. The shaft sleeve is fixed to the base. The rotary shaft is fixed to the monitor and disposed in the shaft sleeve. The driven element is connected to and driven by the rotary shaft. The resistance structure is disposed adjacent to the driven element, wherein the driven element does not contact the resistance structure when the rotary shaft is rotated in a first angular range, and the driven element contacts the resistance structure and sustains a resistance when the rotary shaft is rotated in a second angular range.

Abstract: A semiconductor manufacturing line includes an inert environment selected from the group consisting essentially of an inert airtight wafer holder, an inert wafer transport channel, an inert production tool, an inert clean room, and combinations thereof.

Abstract: A supporting device is described. The supporting device includes a shell, a release mechanism, a rotational mechanism, and a support frame. The shell includes a release chamber disposed at the central position of the shell and a rotational chamber through the shell and perpendicular to the release chamber. The release mechanism is disposed in the release chamber for operating the support frame. The rotational mechanism is disposed in the rotational chamber and protrudes to move correlatively with the release mechanism. The support frame is coupled to the rotational mechanism and is unfolded outwardly for supporting an apparatus. The support frame is closed into the equipment by operating the release mechanism.

Abstract: A portable computer includes a monitor, a base, and a hinge. The hinge includes a shaft sleeve, a rotary shaft, a driven element, and a resistance structure. The shaft sleeve is fixed to the base. The rotary shaft is fixed to the monitor and disposed in the shaft sleeve. The driven element is connected to and driven by the rotary shaft. The resistance structure is disposed adjacent to the driven element, wherein the driven element does not contact the resistance structure when the rotary shaft is rotated in a first angular range, and the driven element contacts the resistance structure and sustains a resistance when the rotary shaft is rotated in a second angular range.

Abstract: Polishing tools and associated methods are disclosed. In one aspect, a tool for polishing a work piece is provided. Such a tool may include a solid substrate with a polymer matrix infiltrated with a conductive material sufficient to allow the substrate to carry an electrical bias. The solid substrate may have a working surface which has asperities having a tip-to-tip RA value of less than or equal to about 10 ?m, and the working surface may have a surface roughness RA value of less than or equal to about 50 ?m. A method for making such a tool and a method for polishing a work piece are also presented.

Abstract: A supporting device is described. The supporting device includes a shell, a release mechanism, a rotational mechanism, and a support frame. The shell includes a release chamber disposed at the central position of the shell and a rotational chamber through the shell and perpendicular to the release chamber. The release mechanism is disposed in the release chamber for operating the support frame. The rotational mechanism is disposed in the rotational chamber and protrudes to move correlatively with the release mechanism. The support frame is coupled to the rotational mechanism and is unfolded outwardly for supporting an apparatus. The support frame is closed into the equipment by operating the release mechanism.

Abstract: A surface treatment method for aluminum nitride includes the steps of: