Abstract: There is provided a wearable device including at least one light source, a light sensor and a processor. The processor generates a peak interval plot according to one of at least two light detection signals detected by the light sensor when the at least one light source emits light, and generates an oxygen saturation plot according to two of the one of at least two light detection signals detected by the light sensor when the at least one emits light. The processor further determines an Apnea Hypopnea Index (AHI) score according to the peak interval plot, determines an Oxygen Desaturation Index (ODI) score according to the oxygen saturation plot and fits an obstructive sleep apnea level index corresponding to the AHI score and the ODI score.

Abstract: A sprayer includes: a container; a passage including a transparent window, a first opening, a second opening and a resonator, wherein when liquid in the container is passed through the resonator via the first opening, the liquid is emitted as a gas via the second opening; and a removable detection unit disposed outside of the passage. The removable detection unit includes: a light source for illuminating the gas in the passage; an optical sensor disposed to detect a parameter of light reflected by the gas; and a processor coupled to the optical sensor for stopping the resonator from generating the gas when the parameter is below a threshold. The passage further includes a cavity disposed on a bottom surface of the passage in front of the optical sensor, wherein when the gas in the passage contacts the bottom surface, resultant water vapour will enter the cavity.

Abstract: An electronic device including a die and a connection structure electrically connected to the die is disclosed. The connection structure includes a first insulating layer including an opening, a second insulating layer, a first metal element disposed between the first insulating layer and the second insulating layer, a second metal element disposed in the opening and electrically connected to the first metal element, and a conductive element. The second metal element is electrically connected between the conductive element and the first metal element. A first surface and a second surface of the first insulating layer are contacted with the first metal element and the conductive element respectively. The first insulating layer includes first filling elements, the second insulating layer includes second filling elements, and in a cross-sectional view, a second maximum size of the second filling elements is greater than a first maximum size of the first filling elements.

Abstract: A laser slicing apparatus, in which a laser module provides a laser beam, and a light splitting element of a focusing lens set splits the laser beam into a plurality of focused laser beams to form a plurality of induce lines having first laser modified cracks in a modified layer at a predetermined depth inside a substrate. A rotating module rotates the light splitting element with an angle, and the light splitting element converts the focused laser beams according to this angle to form a plurality of modified groups between the induce lines. Each modified group includes a plurality of modified lines having second laser modified cracks, and the first laser modified cracks and the second laser modified cracks are connected to each other to form a continuous laser modified crack in the modified layer at the predetermined depth inside the substrate, thereby speeding up the laser slicing production.

Abstract: The present application provides an optical device and a method of fabricating the same. The optical device include a semiconductor stack structure, an anti-reflective film and a highly-reflective film. The semiconductor stack structure is configured to generate a laser beam and emit the laser beam from its front facet while receiving an electric current. The anti-reflective film is disposed on the front facet of the semiconductor stack structure and configured to increase the transmittance (reduce a reflectivity) of the front facet to the laser beam. The highly-reflective film is disposed on a rear facet of the semiconductor stack structure and is configured to reduce a loss (increase a reflectivity) of the laser beam transmitted to the rear facet. The anti-reflective film and the highly-reflective film respectively have refractive indices greater than 2, and the highly-reflective film has a thickness greater than that of the anti-reflective film.

Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Abstract: A soft-switching auxiliary circuit is provided, which may be applicable to a converter including a first main switch and a second main switch. The soft-switching auxiliary circuit may include a first auxiliary switch, a second auxiliary switch, a first energy adjustment module and a second energy adjustment module. By means of the first auxiliary switch and a second auxiliary switch, the first energy adjustment module and the second energy adjustment may properly store and adjust the energy of the converter; therefore, both the first main switch and the second main switch of the converter can achieve soft-switching.

Abstract: A soft-switching auxiliary circuit is provided, which may be applicable to a converter including a first main switch and a second main switch. The soft-switching auxiliary circuit may include a first auxiliary switch, a second auxiliary switch, a first energy adjustment module and a second energy adjustment module. By means of the first auxiliary switch and a second auxiliary switch, the first energy adjustment module and the second energy adjustment may properly store and adjust the energy of the converter; therefore, both the first main switch and the second main switch of the converter can achieve soft-switching.

Abstract: A pontoon-type floating structure comprising an upper deck that is to be maintained above water level and that is to receive and support a load by the load resting thereon; and a horizontal array of chambers disposed underneath the upper deck, with the chambers providing a first set of chambers that provide the structure with buoyancy, and a second set of chambers with water having access thereto so that the second set of chambers, under steady state conditions, do not provide buoyancy.

Abstract: A pontoon-type floating structure comprising an upper deck that is to be maintained above water level and that is to receive and support a load by the load resting thereon; and a horizontal array of chambers disposed underneath the upper deck, with the chambers providing a first set of chambers that provide the structure with buoyancy, and a second set of chambers with water having access thereto so that the second set of chambers, under steady state conditions, do not provide buoyancy.

Abstract: A method of dividing a semiconductor integrated circuit pattern. The pattern has a plurality of cells with the same shape and a polygonal planar positioned between each cell, the polygonal planar has two parallel horizontal edges and a plurality of vertexes. The method includes depicting a division line to divide the polygonal planar positioned between each cell into a plurality of unit figures. The division line begins along a horizontal edge of the polygonal planar, and when meeting with a vertex, the division line extends a vertical line segment from the horizontal edge to another horizontal edge.

Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.

Abstract: The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.

Abstract: A method of modifying a photo mask pattern by using computer aided design (CAD) is described. The photo mask pattern is used to manufacture a photo mask for transferal to a photoresist layer formed on a surface of a semiconductor wafer so as to form a predetermined original pattern. A first modification is first performed according to an optic proximity effect, and then a second modification is performed according to a line end shortening effect. The present invention prevents the line end shortening effect from occurring in a subsequent trim down etching process of the original pattern performed for reducing its critical dimension.

Abstract: The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.

Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.

Abstract: A lithography process for producing gates and connections thereof, which can reduce the pitch of gate end connections is provided. The process comprises the steps of forming a photoresist layer on the substrate; exposing the photoresist layer by using a phase shifter mask to form a gates pattern in the photoresist layer in the device region; exposing the photoresist layer by using a trimming mask to form a conductive lines pattern connected to the gates pattern in the photoresist layer in the isolation region; and developing the photoresist layer.

Abstract: The invention provides a lithography process for forming openings. The method comprises forming a negative photoresist layer. A first mask is used to transfer a first strip pattern to the negative photoresist layer, so that a plurality of first strips, parallel to each other, are formed. A second mask is used to transfer a second strip pattern to the negative photoresist layer, forming a plurality of second strips, parallel to each other. Because the second strip pattern is perpendicular to the first strip pattern, the combined exposure of these two patterns forms a plurality of opening patterns. A trim mask is used to transfer a pattern to the negative photoresist layer for shielding the opening patterns in specific regions and exposing the opening patterns outside the specific regions to light. The negative photoresist layer is then developed.