Abstract: A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.

Abstract: A sample holder for annealing apparatus and electrically assisted annealing apparatus using the same are provided. The sample holder includes a heat conductive shell, high thermal conductive and electrical insulation blocks, first and second electrodes. The heat conductive shell includes a base frame and a top cover. The high thermal conductive and electrical insulation blocks are adjacent to the base frame and the top cover, respectively, and a sample pallet is sandwiched therebetween. Length and width of the sample pallet is smaller than that of the high thermal conductive and electrical insulation blocks. The first and the second electrodes are fixed to two sides of the sample pallet, and are connected to electrifying wire respectively. Thickness of the first and the second electrodes is smaller than that of the sample pallet, while the width of the first and the second electrodes is longer than that of the sample pallet.

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.

Abstract: A thermoelectric module including at least one PN junction device is provided. The PN junction device includes a PN junction structure, top electrodes and at least one bottom electrode. The PN junction structure includes an N-type thermoelectric element and a P-type thermoelectric element, wherein side surfaces of the N-type thermoelectric element and the P-type thermoelectric element facing each other are in contact. The top electrodes are separated from each other and respectively cover a portion of a top surface of the N-type thermoelectric element or a portion of a top surface of the P-type thermoelectric element. The bottom electrode covers a bottom surface of the N-type thermoelectric element and a bottom surface of the P-type thermoelectric element.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.

Abstract: A sample holder for annealing apparatus and electrically assisted annealing apparatus using the same are provided. The sample holder includes a heat conductive shell, high thermal conductive and electrical insulation blocks, first and second electrodes. The heat conductive shell includes a base frame and a top cover. The high thermal conductive and electrical insulation blocks are adjacent to the base frame and the top cover, respectively, and a sample pallet is sandwiched therebetween. Length and width of the sample pallet is smaller than that of the high thermal conductive and electrical insulation blocks. The first and the second electrodes are fixed to two sides of the sample pallet, and are connected to electrifying wire respectively. Thickness of the first and the second electrodes is smaller than that of the sample pallet, while the width of the first and the second electrodes is longer than that of the sample pallet.

Abstract: The present invention discloses a method for fabricating a copper nanowire with high density twins, which comprises steps: providing a template having a top surface, a bottom surface and a plurality of through-holes penetrating the top surface and the bottom surface and having a diameter of smaller than 55 nm; placing the template in a copper-containing electrolyte at a low temperature lower than ambient temperature and applying a pulse current to perform an electrodeposition process to form a copper nanowire with twin structures in each through-hole. The pulse current increases the probability of stacking faults in the deposited copper ions. The low temperature operation favors formation of nucleation sites of twins. Therefore, the copper nanowire has higher density of twins. Thereby is effectively inhibited electromigration of the copper nanowire.

Abstract: A highly efficient thermoelectric material with one end coated in silver adhesive and placed in a high temperature furnace to heat and diffuse the silver adhesive into the homogeneous thermoelectric material, thereby producing an non-uniform thermoelectric material one-side doped thermoelectric material. The non-uniform thermoelectric material one-side doped thermoelectric material is able to achieve a high thermoelectric figure of merit.

Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.

Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.

Abstract: A thermoelectric generation apparatus connected with a heat generation element includes a spreader and at least one thermoelectric generator. The spreader has two opposite surfaces with one surface attached to the thermoelectric generator and another surface attached to the heat generation element. The thermoelectric generator converts thermal energy into electric energy to be output. Through the spreader, thermal energy of the heat generation element can be conducted to be evenly distributed on the surface of the spreader to improve undesirable heat generation efficiency of the thermoelectric generator caused by uneven temperature distributed on the surface of the heat generation element.