Patents by Inventor Chien-Ping HUNG

Chien-Ping HUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20210376116
    Abstract: In a method of manufacturing a semiconductor device, a layout is prepared. The layout includes active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns and second fin cut patterns. At least one pattern selected from the group consisting of the first fin cut patterns and the second fin cut patterns has a non-rectangular shape. The layout is modified by adding one or more dummy active region patterns and by changing the at least one pattern to be a rectangular pattern. Base fin structures are formed according to a modified layout including the active region patterns and the dummy active region patterns. Part of the base fin structures is removed according to one of a modified layout of the first fin cut patterns and a modified layout of the second fin cut patterns.
    Type: Application
    Filed: August 16, 2021
    Publication date: December 2, 2021
    Inventors: Chi-Wen HSIEH, Chien-Ping HUNG, Chi-Kang CHANG, Shih-Chi FU, Kuei-Shun CHEN
  • Patent number: 11094802
    Abstract: In a method of manufacturing a semiconductor device, a layout is prepared. The layout includes active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns and second fin cut patterns. At least one pattern selected from the group consisting of the first fin cut patterns and the second fin cut patterns has a non-rectangular shape. The layout is modified by adding one or more dummy active region patterns and by changing the at least one pattern to be a rectangular pattern. Base fin structures are formed according to a modified layout including the active region patterns and the dummy active region patterns. Part of the base fin structures is removed according to one of a modified layout of the first fin cut patterns and a modified layout of the second fin cut patterns.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: August 17, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Wen Hsieh, Chien-Ping Hung, Chi-Kang Chang, Shih-Chi Fu, Kuei-Shun Chen
  • Publication number: 20200058762
    Abstract: In a method of manufacturing a semiconductor device, a layout is prepared. The layout includes active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns and second fin cut patterns. At least one pattern selected from the group consisting of the first fin cut patterns and the second fin cut patterns has a non-rectangular shape. The layout is modified by adding one or more dummy active region patterns and by changing the at least one pattern to be a rectangular pattern. Base fin structures are formed according to a modified layout including the active region patterns and the dummy active region patterns. Part of the base fin structures is removed according to one of a modified layout of the first fin cut patterns and a modified layout of the second fin cut patterns.
    Type: Application
    Filed: July 10, 2019
    Publication date: February 20, 2020
    Inventors: Chi-Wen HSIEH, Chien-Ping HUNG, Chi-Kang CHANG, Shih-Chi FU, Kuei-Shun CHEN
  • Publication number: 20110283068
    Abstract: A memory access apparatus is coupled to a memory unit and includes a header access circuit and a payload access circuit. The header access circuit includes a header fetching unit used to fetch a header descriptor in the memory unit, and the payload access circuit includes a payload fetching unit used to fetch a payload descriptor in the memory unit. The header access circuit and the payload access circuit perform fetching with respect to the memory unit in a non-sequenced manner.
    Type: Application
    Filed: May 13, 2011
    Publication date: November 17, 2011
    Applicant: REALTEK SEMICONDUCTOR CORP.
    Inventors: Chien-Ping HUNG, Fong-Ray GU, Chia-Hung LIN, Kuo-Nan YANG