Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ stack; forming a first hard mask on the first SOT layer; and using a second hard mask to pattern the first hard mask, the first SOT layer, and the MTJ stack to form a MTJ.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, forming an etch stop layer on the MTJ stack, forming a first spin orbit torque (SOT) layer on the etch stop layer, and then patterning the first SOT layer, the etch stop layer, and the MTJ stack to form a MTJ.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A miniature cooling system includes a base metal sheet, a flow channel layer, a piezoelectrically actuated metal sheet, a piezoelectric boundary compression layer and two piezoelectric ceramic vibrators. The flow channel layer is located on the base metal sheet and includes a first chamber, a second chamber, an inlet channel, a linking channel and an outlet channel. The inlet channel links the outside environment to the first chamber. The linking channel links the first chamber and the second chamber. The outlet channel links the second chamber to the outside environment. The piezoelectrically actuated metal sheet is located on the flow channel layer. The piezoelectric boundary compression layer is located on the piezoelectrically actuated metal sheet. The piezoelectric boundary compression layer includes two containing areas, and the two containing areas are respectively located above the first chamber and the second chamber.

Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

Abstract: A miniature cooling system includes a base metal sheet, a flow channel layer, a piezoelectrically actuated metal sheet, a piezoelectric boundary compression layer and two piezoelectric ceramic vibrators. The flow channel layer is located on the base metal sheet and includes a first chamber, a second chamber, an inlet channel, a linking channel and an outlet channel. The inlet channel links the outside environment to the first chamber. The linking channel links the first chamber and the second chamber. The outlet channel links the second chamber to the outside environment. The piezoelectrically actuated metal sheet is located on the flow channel layer. The piezoelectric boundary compression layer is located on the piezoelectrically actuated metal sheet. The piezoelectric boundary compression layer includes two containing areas, and the two containing areas are respectively located above the first chamber and the second chamber.

Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.

Abstract: The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.

Abstract: An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.

Abstract: An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.

Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Abstract: A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.

Abstract: An inspection system is provided, which applies a forward or reverse voltage on a light-emitting device and measures a current thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a current difference before and after the temperature rise is larger than a failure current determination value. Alternatively, the inspection system adopts a current applying device to apply a forward and reverse current on a light-emitting device and measures a voltage difference thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a difference of the voltage differences before and after the temperature rise is larger than a failure voltage determination value. Alternatively, the inspection system adopts a predetermined inspecting step and a rapid inspecting step respectively to determine whether a light-emitting device fails.

Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.

Abstract: A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.

Abstract: The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.

Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Abstract: An inspection system is provided, which applies a forward or reverse voltage on a light-emitting device and measures a current thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a current difference before and after the temperature rise is larger than a failure current determination value. Alternatively, the inspection system adopts a current applying device to apply a forward and reverse current on a light-emitting device and measures a voltage difference thereof respectively before and after temperature rise, and determines whether the device fails according to the fact whether a difference of the voltage differences before and after the temperature rise is larger than a failure voltage determination value. Alternatively, the inspection system adopts a predetermined inspecting step and a rapid inspecting step respectively to determine whether a light-emitting device fails.

Abstract: An LED package interface inspection apparatus for an LED device comprises a current source, a voltage measuring unit, and a testing control unit. The testing control unit provides at least one control signal to command the current source to output at least one current for the LED device. The testing control unit also provides at least two signals to command the voltage measuring unit to measure a first forward voltage of the LED device at a first time and a second forward voltage of the LED device at a second time. The testing control unit calculates a voltage difference between the first forward voltage and the second forward voltage, and determines that the LED device is defective if the voltage difference is larger than a predetermined threshold value.