Patents by Inventor Chien-Ping Wu

Chien-Ping Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515173
    Abstract: Interconnect devices, packaged semiconductor devices and methods are disclosed herein that are directed towards embedding a local silicon interconnect (LSI) device and through substrate vias (TSVs) into system on integrated substrate (SoIS) technology with a compact package structure. The LSI device may be embedded into SoIS technology with through substrate via integration to provide die-to-die FL connection arrangement for super large integrated Fan-Out (InFO) for SBT technology in a SoIS device. Furthermore, the TSV connection layer may be formed using lithographic or photoresist-defined vias to provide eLSI P/G out to a ball-grid-array (BGA) connection interface.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Hsun Chen, Yu-Min Liang, Yen-Ping Wang, Jiun Yi Wu, Chen-Hua Yu, Kai-Chiang Wu
  • Publication number: 20220336684
    Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Chen-Hao HUANG, Hau-Yan LU, Sui-Ying HSU, YuehYing LEE, Chien-Ying WU, Chia-Ping LAI
  • Publication number: 20220317408
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Application
    Filed: June 21, 2022
    Publication date: October 6, 2022
    Inventors: Chao-Chang HU, Chih-Wei WENG, Chia-Che WU, Chien-Yu KAO, Hsiao-Hsin HU, He-Ling CHANG, Chao-Hsi WANG, Chen-Hsien FAN, Che-Wei CHANG, Mao-Gen JIAN, Sung-Mao TSAI, Wei-Jhe SHEN, Yung-Ping YANG, Sin-Hong LIN, Tzu-Yu CHANG, Sin-Jhong SONG, Shang-Yu HSU, Meng-Ting LIN, Shih-Wei HUNG, Yu-Huai LIAO, Mao-Kuo HSU, Hsueh-Ju LU, Ching-Chieh HUANG, Chih-Wen CHIANG, Yu-Chiao LO, Ying-Jen WANG, Shu-Shan CHEN, Che-Hsiang CHIU
  • Patent number: 11442230
    Abstract: An optical structure may be provided by forming a silicon grating structure over a dielectric material layer, depositing at least one dielectric material layer over the silicon grating structure, and depositing at least one dielectric etch stop layer over the at least one dielectric material layer. The at least one dielectric etch stop layer includes at least one dielectric material selected from silicon nitride and silicon oxynitride. A passivation dielectric layer may be formed over the at least one dielectric etch stop layer, and a patterned etch mask layer may be formed over the passivation dielectric layer. An opening may be formed through an unmasked portion of the passivation dielectric layer by performing an anisotropic etch process that etches the dielectric material selective to a silicon nitride or silicon oxynitride using the patterned etch mask layer as a masking structure. The at least one etch mask layer minimizes overetching.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: September 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yueh Ying Lee, Chien-Ying Wu, Sui-Ying Hsu, Chen-Hao Huang, Chien-Chang Lee, Chia-Ping Lai
  • Patent number: 11438992
    Abstract: A non-common-ground bandpass filter circuit with electrostatic discharge (ESD) protection is disclosed. The non-common-ground bandpass filter circuit with ESD protection includes a non-common-ground plane, a dielectric substrate and a conductor. The conductor is disposed above the non-common-ground plane. The dielectric substrate is disposed between the conductor and the non-common-ground plane. The non-common-ground plane at least has a first ground region and a second ground region separated and insulated from each other. The first ground region corresponds to a first terminal of the conductor and the second ground region corresponds to a second terminal of the conductor. When an ESD event occurs on one of the first ground region and the second ground region, the other of the first ground region and the second ground region will not be damaged by the ESD event. The non-common-ground bandpass filter circuit also provides surge protection.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: September 6, 2022
    Assignee: iWave Technologies Co., Ltd.
    Inventors: Shau-Gang Mao, Chong-Yi Liou, Wei-Ting Tsai, Ting-Wei Wu, Yu-Yao Chen, Jin-Feng Neo, Zheng-An Peng, Tsu-Yu Lo, Je-Yao Chang, Chien-Bang Chen, Shih-Ping Huang
  • Publication number: 20220269003
    Abstract: A photonic device includes an optical coupler, a waveguide structure, a metal-dielectric stack, and a protection layer. The optical coupler is over a semiconductor substrate. The waveguide structure is over the semiconductor substrate and laterally connected to the optical coupler. A top of the waveguide structure is lower than a top of the optical coupler. The metal-dielectric stack is over the optical coupler and the waveguide structure. The metal-dielectric stack has a hole above the optical coupler. The protection layer lines the hole of the metal-dielectric stack.
    Type: Application
    Filed: May 9, 2022
    Publication date: August 25, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying HSU, Yueh-Ying LEE, Chien-Ying WU, Chen-Hao HUANG, Chien-Chang LEE, Chia-Ping LAI
  • Publication number: 20220238730
    Abstract: At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.
    Type: Application
    Filed: January 27, 2021
    Publication date: July 28, 2022
    Inventors: Chen-Hao HUANG, Hau-Yan LU, Sui-Ying HSU, Yueh Ying LEE, Chien-Ying WU, Chia-Ping LAI
  • Patent number: 11397302
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: July 26, 2022
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20220203361
    Abstract: This document relates to methods and materials for assessing and/or treating mammals (e.g., humans) having, or suspected of having, cancer. For example, methods and materials for identifying a mammal as having cancer are provided. For example, microfluidic devices that can be used to detect one or more target polypeptides (e.g., cancer-specific polypeptides) in a fluid sample obtained from a mammal (e.g., a mammal suspected of having cancer) are provided.
    Type: Application
    Filed: April 24, 2020
    Publication date: June 30, 2022
    Inventors: Chih-Ping Mao, Shih-Chin Wang, Jie Xiao, Tzyy Choou Wu, Chien-Fu Hung
  • Publication number: 20110295885
    Abstract: A remote-interaction apparatus comprises a portable electronic device installing a specific software and an interaction unit having an interaction-mode database. The interaction unit can detect a sensory information inputted by a user and find out an interaction information corresponding to the sensory information from the interaction-mode database for transmitting the first interaction information to the portable electronic device by a first communication protocol. And the specific software employs the portable electronic device to transmit the interaction information to another remote-interaction apparatus by a second communication protocol.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: RawLaro Studio Co., LTD.
    Inventors: Shyh-Yi JAN, Shih-Ting SIAO, Tun-Hao YOU, Chen-Yu WANG, Chien-Ping WU
  • Publication number: 20100297393
    Abstract: Provided is a method for surface frosting of glass product, wherein a glass product is first immersed in a pre-treatment solution having a composition including water (H2O) 60-80 wt %, hydrofluoric acid (HF) 10-20 wt %, and nitric acid (HNO3) 10-20 wt % for approximately 5 seconds to remove grease/oil and/or contamination from a surface of the glass product, then immersed in a frosting solution having a composition including nitric acid (HNO3) 15-40 wt %, ammonium hydrofluoride (NH4HF2) 30-60 wt %, hydrofluoric acid (HF) 0-10 wt %, water (H2O) 0-45 wt %, and hydrochloric acid (HCl) 0-1 wt % for approximately 1-5 minutes, and finally rinsed with water. As such, the surface of the glass product so treated forms a surface texture that provides smooth tactility of hand touch and shows an outer appearance of a scale like pattern formed on the surface of the glass product.
    Type: Application
    Filed: April 14, 2010
    Publication date: November 25, 2010
    Inventor: Chien-Ping WU
  • Patent number: 5952878
    Abstract: A second-order differential highpass filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.3, R.sub.4, R.sub.5 and R.sub.6, wherein R.sub.4 /R.sub.3 =R.sub.6 /R.sub.5. An input voltage V.sub.1 is fed to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.5. Another input voltage V.sub.2 is fed to the noninverting terminal (+) of the operational amplifier OP.sub.1 via the resistor R.sub.3. The output of the operational amplifier OP.sub.1 is fed back to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.6. The feedback processing circuit includes an operational amplifier OP.sub.2, two resistors R.sub.1 and R.sub.2, and two serial capacitors C.sub.2 and C.sub.1. The output of the operational amplifier OP.sub.
    Type: Grant
    Filed: January 20, 1998
    Date of Patent: September 14, 1999
    Assignee: National Science Council
    Inventors: Chien-Ping Wu, Chang-Da Tsai, Shiao-Long Zhan
  • Patent number: 5952885
    Abstract: A current-to-voltage converter with highpass filter function constructed according to the present invention contains two operational amplifiers OP1 and OP2, two resistors R.sub.1 and R.sub.2, and a capacitor C.sub.1. The noninverting (+) terminal of the operational amplifier OP1 is grounded. The inverting (-) terminal of the operational amplifier OP1 is used to receive the output of the current-type sensing device and connected to the output terminal of the operational amplifier OP2 via the resistor R.sub.2. The output terminal of the operational amplifier OP1 is connected to the noninverting terminal of the operational amplifier OP2. The output of the operational amplifier OP2 is fed back to the inverting terminal of the operational amplifier OP2 via the capacitor C.sub.1, and the inverting terminal of the operational amplifier OP2 is connected to one terminal of the resistor R.sub.1 of which another terminal is grounded.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: September 14, 1999
    Assignee: National Science Council
    Inventors: Chien-Ping Wu, Chang-Da Tsai, Jiann-Jong Chen
  • Patent number: 5701100
    Abstract: A second-order highpass difference filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.1, R.sub.2, R.sub.3 and R.sub.4. The feedback processing circuit is composed of two operational amplifiers OP.sub.2 and OP.sub.3, resistors R.sub.5 and R.sub.6, and two serial capacitors C.sub.1 and C.sub.2. The inverting and noninverting terminals of the operational amplifier OP.sub.3 are connected to the output of the difference amplifier and of the operational amplifier OP.sub.2, respectively. The output of the operational amplifier OP.sub.2 is also fed back to the inverting terminal of the operational amplifier OP.sub.2 via the resistor R.sub.5, and the noninverting terminal of the operational amplifier OP.sub.2 is grounded. The output terminal of the operational amplifier OP.sub.3 is connected to the inverting terminal of the operational amplifier OP.sub.
    Type: Grant
    Filed: September 10, 1996
    Date of Patent: December 23, 1997
    Assignee: National Science Council
    Inventors: Chien-Ping Wu, Chang-Da Tsai