Patents by Inventor Chien-Tang Peng

Chien-Tang Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11951091
    Abstract: Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: April 9, 2024
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C
    Inventors: Chien-Chung Hsia, Chung-Hsin Yeh, Cheng-Liang Peng, Chun-Tang Chen
  • Patent number: 10879161
    Abstract: Conductive structures, semiconductor packages and methods of forming the same are disclosed. A semiconductor package includes at least one die and a redistribution layer. The redistribution layer is disposed over and electrically to the at least one die and includes a seed layer structure and a metal feature over the seed layer structure. In some embodiments, an edge of the seed layer structure is protruded from an edge of the metal feature and has a surface roughness Rz greater than 10 nm.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Jui Kuo, Hui-Jung Tsai, Jyun-Siang Peng, Chien-Tang Peng
  • Publication number: 20200075470
    Abstract: Conductive structures, semiconductor packages and methods of forming the same are disclosed. A semiconductor package includes at least one die and a redistribution layer. The redistribution layer is disposed over and electrically to the at least one die and includes a seed layer structure and a metal feature over the seed layer structure. In some embodiments, an edge of the seed layer structure is protruded from an edge of the metal feature and has a surface roughness Rz greater than 10 nm.
    Type: Application
    Filed: June 5, 2019
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Jui Kuo, Hui-Jung Tsai, Jyun-Siang Peng, Chien-Tang Peng