Abstract: A method includes forming, over a substrate, an optical component and first, second and third thermal control mechanisms. The optical component includes first and second main paths, and first and second side paths each having opposite ends correspondingly coupled to the first and second main paths. The second side path is spaced from the first side path. Each of the first, second and third thermal control mechanisms includes a first thermoelectric member having a first conductivity type, a second thermoelectric member having a second conductivity type opposite to the first conductivity type, and a conductive structure that electrically connects the first thermoelectric member to the second thermoelectric member. The first side path is between the first and third thermal control mechanisms. The second side path is between the second and third thermal control mechanisms. The third thermal control mechanism is between the first and second side paths.

Abstract: A power device includes: a semiconductor layer, a well region, a body region, a gate, a sub-gate, a source, a drain, and an electric field adjustment region. The sub-gate is formed above a top surface of the semiconductor layer, wherein a portion of the well region is located vertically beneath the sub-gate. The sub-gate is not directly connected to the gate. The electric field adjustment region has a conductivity type which is opposite to that of the well region. The electric field adjustment region is formed beneath and not in contact with the top surface of the semiconductor layer. The electric field adjustment region is located in the well region of the semiconductor layer, and at least a portion of the electric field adjustment region is located vertically beneath the sub-gate.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

Abstract: A substrate of an electronic device includes a first set of contact pads and a first set of contact pillars having a height greater than the first set of contact pads. Components are coupled to the first set of contact pads and the first set of contact pillars in traversing directions. The components coupled to the contact pillars are positioned above the components coupled to the first set of contact pads such that at least a first portion of a first side of the component coupled to the contact traces faces a first side of the components coupled to the contact pillars. Stacking passive components in this manner can allow for increased component density without increasing package size.

Abstract: A fan-out semiconductor device includes stacked semiconductor dies having die bond pads arranged in columns exposed at a sidewall of the stacked semiconductor dies. The stacked dies are encapsulated in a photo imageable dielectric (PID) material, which is developed to form through-hole cavities that expose the columns of bond pads of each die at the sidewall. The through-hole cavities are plated or filled with an electrical conductor to form conductive through-holes coupling die bond pads within the columns to each other.

Abstract: Devices and methods are described for reducing etching due to Galvanic Effect within a printed circuit board (PCB) that may be used in an electronic device. Specifically, a contact trace is coupled to a contact finger that has a substantially larger surface area than the contact trace. The contact finger is configured to couple the electronic device to a host device. The contact trace is electrically isolated from the rest of the PCB circuitry during a fabrication process by a separation distance between an exposed portion of the contact trace and an impedance trace. The contact finger and the exposed portion of the contact trace are plated with a common material to reduce galvanic etching of the contact trace during fabrication. The contact trace is then connected to the impedance trace using a solder joint.

Abstract: In one example, the present application describes a Printed Circuit Board (PCB) that mitigates galvanic corrosion during an Organic Solderability Preservative (OSP) process used during fabrication of the PCB. The PCB includes a first metal pattern and a second metal pattern electrically coupled to each other, where the first and second metal patterns are different metals. The first metal pattern has a first area that is exposed by a solder mask layer, and the second metal pattern has a second area that is exposed by the solder mask area. A ratio of the first area to the second area is less than a threshold ratio to mitigate the galvanic corrosion of the second metal pattern exposed on the PCB during the OSP process.

Abstract: Devices and methods are described for reducing etching due to Galvanic Effect within a printed circuit board (PCB) that may be used in an electronic device. Specifically, a contact trace is coupled to a contact finger that has a substantially larger surface area than the contact trace. The contact finger is configured to couple the electronic device to a host device. The contact trace is electrically isolated from the rest of the PCB circuitry during a fabrication process by a separation distance between an exposed portion of the contact trace and an impedance trace. The contact finger and the exposed portion of the contact trace are plated with a common material to reduce galvanic etching of the contact trace during fabrication. The contact trace is then connected to the impedance trace using a solder joint.

Abstract: A bumped solder pad and methods for adding bumps to a solder pad are provided. A substrate is provided having metal layer formed thereon and a solder pad formed from a portion of the metal layer. A surface treatment is applied to the solder pad. The surface treatment is patterned. The surface treatment is etched to produce at least one bump on the solder pad.

Abstract: A substrate of an electronic device includes a first set of contact pads and a first set of contact pillars having a height greater than the first set of contact pads. Components are coupled to the first set of contact pads and the first set of contact pillars in traversing directions. The components coupled to the contact pillars are positioned above the components coupled to the first set of contact pads such that at least a first portion of a first side of the component coupled to the contact traces faces a first side of the components coupled to the contact pillars. Stacking passive components in this manner can allow for increased component density without increasing package size.

Abstract: A bumped solder pad and methods for adding bumps to a solder pad are provided. A substrate is provided having metal layer formed thereon and a solder pad formed from a portion of the metal layer. A surface treatment is applied to the solder pad. The surface treatment is patterned. The surface treatment is etched to produce at least one bump on the solder pad.

Abstract: A land grid array semiconductor device is disclosed which is configured for removable insertion to and from a host device. The land grid array semiconductor device may include a first set of one or more contact fingers on the first surface of the land grid array semiconductor device, and a second set of one or more contact fingers on the second surface of the land grid array semiconductor device. In order to electrically couple the second set of one or more contact fingers, one or more electrical connectors may be provided physically extending between the second set of one or more contact fingers and at least one of the substrate and the at least one semiconductor die.

Abstract: A land grid array semiconductor device is disclosed which is configured for removable insertion to and from a host device. The land grid array semiconductor device may include a first set of one or more contact fingers on the first surface of the land grid array semiconductor device, and a second set of one or more contact fingers on the second surface of the land grid array semiconductor device. In order to electrically couple the second set of one or more contact fingers, one or more electrical connectors may be provided physically extending between the second set of one or more contact fingers and at least one of the substrate and the at least one semiconductor die.

Abstract: Methods for the formation of single-cap VIPs in a substrate are described herein. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.

Abstract: Novel methods are provided that results in the formation of single-cap VIPs in a substrate are described herein. As a result, fine pitch trace patterns may be formed on the substrate. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.

Abstract: A circuit board structure and a method for fabricating the same are disclosed, including providing a core board having conductive traces and solder pads respectively formed thereon, wherein width of the solder pads corresponds to that of the conductive traces, and pitch between adjacent solder pads is made wide enough to allow multiple conductive traces to pass through; forming on the core board an insulating layer with openings for exposing the solder pads therefrom; forming on the insulating layer a plurality of extending pads electrically connected to the solder pads respectively, wherein the projection area of the extending pads is larger than that of the corresponding solder pads and covers conductive traces adjacent to the corresponding solder pads. Thus, more conductive traces are allowed to pass between adjacent solder pads and meanwhile, the extending pads provide an effective solder ball wetting area for achieving good solder joints and sufficient height after collapse.