Patents by Inventor Chien-Te Liu

Chien-Te Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153992
    Abstract: A device includes a first channel structure, a second channel structure, and a gate structure. The first channel structure connects a first source region and a first drain region, and includes alternating stacking first semiconductor layers and second semiconductor layers. The second semiconductor layers have a width smaller than a width of the first semiconductor layers. The second channel structure connects a second source region and a second drain region. The second channel structure includes alternating stacking third semiconductor layers and fourth semiconductor layers. The fourth semiconductor layers have a width smaller than a width of the third semiconductor layers. The gate structure wraps around the first and second channel structures.
    Type: Application
    Filed: January 11, 2024
    Publication date: May 9, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Hung-Yu YE, Yu-Shiang HUANG, Chien-Te TU, Chee-Wee LIU
  • Patent number: 11955384
    Abstract: A device includes a bottom transistor, a top transistor, and an epitaxial isolation structure. The bottom transistor includes a first channel layer, first source/drain epitaxial structures, and a first gate structure. The first source/drain epitaxial structures are on opposite sides of the first channel layer. The first gate structure is around the first channel layer. The top transistor is over the bottom transistor and includes a second channel layer, second source/drain epitaxial structures, and a second gate structure. The second source/drain epitaxial structures are on opposite sides of the second channel layer. The second gate structure is around the second channel layer. The epitaxial isolation structure is between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that the one of the first source/drain epitaxial structures is electrically isolated from the one of the second source/drain epitaxial structures.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: April 9, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chien-Te Tu, Hsin-Cheng Lin, Chee-Wee Liu
  • Publication number: 20240072054
    Abstract: A device comprises a first semiconductor layer, a dielectric layer, a second semiconductor layer, and a gate structure. The first semiconductor layer is over a substrate. The first semiconductor layer comprises a first channel region and first source/drain regions on opposite sides of the first channel region. The dielectric layer is over the first semiconductor layer. The second semiconductor layer is over the dielectric layer. The second semiconductor layer comprises a second channel region and second source/drain regions on opposite sides of the second channel region. The gate structure comprises a first portion extending in the dielectric layer, a second portion wrapping around the first channel region of the first semiconductor layer, and a third portion wrapping around the second channel region of the second semiconductor layer.
    Type: Application
    Filed: April 24, 2023
    Publication date: February 29, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chien-Te TU, Chee-Wee LIU
  • Patent number: 6831443
    Abstract: A power adapter assembly for use between a portable electrical device and a power source is disclosed. The power adapter assembly includes a power connecting device having a first joint at one end thereof for electrically connecting to the portable electrical device and a second joint at the other end thereof, a data storage unit electrically connected with the second joint of the power connecting device and storing the power supply data corresponding to the portable electrical device, and a power adapter having a socket for electrically connecting to the second joint of the power connecting device. The power adapter reads the power supply data stored in the data storage unit, converts the power from the power source into a required power form according to the power supply data, and transfers the required power to the portable electrical device through the power connecting device.
    Type: Grant
    Filed: July 5, 2002
    Date of Patent: December 14, 2004
    Assignee: Primax Electronics, Ltd.
    Inventor: Chien-Te Liu
  • Publication number: 20030080630
    Abstract: A power adapter assembly for use between a portable electrical device and a power source is disclosed. The power adapter assembly includes a power connecting device having a first joint at one end thereof for electrically connecting to the portable electrical device and a second joint at the other end thereof, a data storage unit electrically connected with the second joint of the power connecting device and storing the power supply data corresponding to the portable electrical device, and a power adapter having a socket for electrically connecting to the second joint of the power connecting device. The power adapter reads the power supply data stored in the data storage unit, converts the power from the power source into a required power form according to the power supply data, and transfers the required power to the portable electrical device through the power connecting device.
    Type: Application
    Filed: July 5, 2002
    Publication date: May 1, 2003
    Applicant: Primax Electronics Ltd.
    Inventor: Chien-Te Liu