Abstract: An integrated circuit includes a semiconductor substrate and a plurality of circuit elements in or on the substrate. The circuit elements are defined by standard layout cells selected from a cell library. The circuit elements including a plurality of flip-flops. Each flip-flop has a data input terminal, a data output terminal, a clock input terminal, and a clock output terminal. A first one of the flip-flops directly abuts a second flip-flop such that the clock output terminal of the first flip-flop electrically connects with the clock input terminal of the second flip-flop.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Abstract: Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Abstract: A method includes forming, over a substrate, an optical component and first, second and third thermal control mechanisms. The optical component includes first and second main paths, and first and second side paths each having opposite ends correspondingly coupled to the first and second main paths. The second side path is spaced from the first side path. Each of the first, second and third thermal control mechanisms includes a first thermoelectric member having a first conductivity type, a second thermoelectric member having a second conductivity type opposite to the first conductivity type, and a conductive structure that electrically connects the first thermoelectric member to the second thermoelectric member. The first side path is between the first and third thermal control mechanisms. The second side path is between the second and third thermal control mechanisms. The third thermal control mechanism is between the first and second side paths.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: An integrated circuit includes a semiconductor substrate and a plurality of circuit elements in or on the substrate. The circuit elements are defined by standard layout cells selected from a cell library. The circuit elements including a plurality of flip-flops. Each flip-flop has a data input terminal, a data output terminal, a clock input terminal, and a clock output terminal. A first one of the flip-flops directly abuts a second flip-flop such that the clock output terminal of the first flip-flop electrically connects with the clock input terminal of the second flip-flop.

Abstract: Provided herein are encoded microcarriers for analyte detection in multiplex assays. The microcarriers are encoded with an analog code for identification and comprise a capture agent for analyte detection and a substantially transparent magnetic polymer. The analog code is generated by a two-dimensional shape of a substantially non-transparent layer. Also provided are methods of making the encoded microcarriers disclosed herein. Further provided are methods and kits for conducting a multiplex assay using the microcarriers described herein.

Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.

Abstract: A method of making a semiconductor device includes defining an opening extending from a first side of a substrate to a second side of the substrate, wherein the first side of the substrate is opposite the second side of the substrate. The method further includes depositing a dielectric material into the opening, wherein the dielectric material has a first refractive index. The method further includes etching the dielectric material to define a core opening extending from the first side of the substrate to the second side of the substrate. The method further includes depositing a core material into the core opening, wherein the core material has a second refractive index different from the first refractive index, and the core material is optically transparent. The method further includes removing excess core material from a surface of the substrate.

Abstract: Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a waveguide on a first side of the substrate. The semiconductor device further includes a photodetector (PD) on a second side of the substrate, opposite the first side of the substrate. The semiconductor device further includes an optical through via (OTV) optically connecting the PD with the waveguide, wherein the OTV extends through the substrate from the first side of the substrate to the second side of the substrate.

Abstract: Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.