Abstract: EUV masks and methods of fabrication thereof are described herein. An exemplary method includes receiving an EUV mask having a multilayer structure, a capping layer disposed over the multilayer structure, a patterned absorber layer disposed over the capping layer, and a patterned hard mask disposed over the patterned absorber layer. The method further includes removing the patterned hard mask by performing a first etching process to partially remove the patterned hard mask and performing a second etching process to remove a remainder of the patterned hard mask. The first etching process uses a first etchant, and the second etching process uses a second etchant. The second etchant is different than the first etchant. In some embodiments, the first etchant is a halogen-based plasma (e.g., a Cl2 plasma), and the second etchant is a halogen-and-oxygen-based plasma (e.g., a Cl2+O2 plasma).

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: High-efficiency control technology for non-volatile memory. A non-volatile memory has single level cells (SLCs) and multiple level cells (e.g., MLCs or TLCs) and is controlled by a controller. According to the controller at the device end, a host allocates a system memory to provide a host memory buffer (HMB). The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to the frequent use of the single-level cells.

Abstract: A communication device includes a nonconductive housing, a cable, an antenna structure, and a signal source. The nonconductive housing has a hollow structure. The cable is coupled to the signal source. The cable includes a signaling conductor and a grounding conductor. The antenna structure includes an antenna body and an enclosed radiation element. The antenna body is coupled to the signaling conductor. The antenna body is disposed outside the nonconductive housing. The enclosed radiation element is coupled to the grounding conductor. The enclosed radiation element is disposed inside the nonconductive housing.

Abstract: A communication device includes a nonconductive housing, a cable, an antenna structure, and a signal source. The nonconductive housing has a hollow structure. The cable is coupled to the signal source. The cable includes a signaling conductor and a grounding conductor. The antenna structure includes an antenna body and an enclosed radiation element. The antenna body is coupled to the signaling conductor. The antenna body is disposed outside the nonconductive housing. The enclosed radiation element is coupled to the grounding conductor. The enclosed radiation element is disposed inside the nonconductive housing.

Abstract: An antenna structure includes a ground plane, a dielectric substrate, a first radiation element, a second radiation element, a third radiation element, and a fourth radiation element. The first radiation element is coupled to a signal source. Both the third radiation element and the fourth radiation element are coupled between the first radiation element and the second radiation element. The third radiation element has a first notch and a second notch. The fourth radiation element has a third notch and a fourth notch. A loop structure is formed by the first radiation element, the second radiation element, the third radiation element, and the fourth radiation element. A fifth notch is formed between the first radiation element and the third radiation element. A sixth notch is formed between the first radiation element and the fourth radiation element.

Abstract: High-efficiency control technology for non-volatile memory. A non-volatile memory has single level cells (SLCs) and multiple level cells (e.g., MLCs or TLCs) and is controlled by a controller. According to the controller at the device end, a host allocates a system memory to provide a host memory buffer (HMB). The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to the frequent use of the single-level cells.

Abstract: An antenna structure includes a ground plane, a dielectric substrate, a first radiation element, a second radiation element, a third radiation element, and a fourth radiation element. The first radiation element is coupled to a signal source. Both the third radiation element and the fourth radiation element are coupled between the first radiation element and the second radiation element. The third radiation element has a first notch and a second notch. The fourth radiation element has a third notch and a fourth notch. A loop structure is formed by the first radiation element, the second radiation element, the third radiation element, and the fourth radiation element. A fifth notch is formed between the first radiation element and the third radiation element. A sixth notch is formed between the first radiation element and the fourth radiation element.

Abstract: A broadband antenna includes a substrate; a grounding unit; a first radiating element, including a first segment and a second segment substantially perpendicular to each other, wherein the first segment is electrically connected to the grounding unit and the second segment extends toward a direction; a second radiating element, coupled to the first radiating element; a third radiating element having a terminal coupled to or electrically connected to the second radiating element and another terminal electrically connected to the grounding unit; and a signal feed-in element electrically connected to the third radiating element for transmitting or receiving a radio signal; where the first, the second and the third radiating elements are disposed on the substrate along the direction defined by an order of the first segment of the first radiating element, the second radiating element and the third radiating element.

Abstract: The invention provides a data read method. In one embodiment, a flash memory comprises a plurality of pages, and predetermined information is written into each of the pages of the flash memory. First, a target address of the flash memory is read according to a source read voltage to obtain source data and a source error correction code. When error bits of the source data cannot be corrected according to the source error correction code, the predetermined information corresponding to the source data is read from the flash memory according to the source read voltage to obtain correction information. The source data and the source error correction code are then amended according to the difference between the predetermined information and the correction information to obtain an amended data and an amended error correction code. Error bits of the amended data are then corrected according to the amended error correction code.

Abstract: A broadband antenna for a wireless communication device includes a grounding unit for grounding; a first radiating element; a second radiating element electrically connected to the grounding unit; a signal feed-in element for transmitting a radio signal to the first radiating element in order to emit the radio signal via the first radiating element; and a passive component comprising an inductor, where the passive component is electrically connected between the first and the second radiating elements to work in conjunction with the first radiating element, the second radiating element and the grounding unit to form a loop antenna effect.

Abstract: A broadband antenna includes a substrate; a grounding unit; a first radiating element, including a first segment and a second segment substantially perpendicular to each other, wherein the first segment is electrically connected to the grounding unit and the second segment extends toward a direction; a second radiating element, coupled to the first radiating element; a third radiating element having a terminal coupled to or electrically connected to the second radiating element and another terminal electrically connected to the grounding unit; and a signal feed-in element electrically connected to the third radiating element for transmitting or receiving a radio signal; where the first, the second and the third radiating elements are disposed on the substrate along the direction defined by an order of the first segment of the first radiating element, the second radiating element and the third radiating element.

Abstract: A broadband antenna for a wireless communication device includes a grounding unit for grounding; a first radiating element; a second radiating element electrically connected to the grounding unit; a signal feed-in element for transmitting a radio signal to the first radiating element in order to emit the radio signal via the first radiating element; and a passive component comprising an inductor, where the passive component is electrically connected between the first and the second radiating elements to work in conjunction with the first radiating element, the second radiating element and the grounding unit to form a loop antenna effect.

Abstract: A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.

Abstract: A flash memory device with a wear-leveling mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.

Abstract: The invention provides a data read method. In one embodiment, a flash memory comprises a plurality of pages, and predetermined information is written into each of the pages of the flash memory. First, a target address of the flash memory is read according to a source read voltage to obtain source data and a source error correction code. When error bits of the source data cannot be corrected according to the source error correction code, the predetermined information corresponding to the source data is read from the flash memory according to the source read voltage to obtain correction information. The source data and the source error correction code are then amended according to the difference between the predetermined information and the correction information to obtain an amended data and an amended error correction code. Error bits of the amended data are then corrected according to the amended error correction code.

Abstract: A flash memory device with a wear-levelining mechanism includes at least one flash memory, a hot list, a bitmap, a source pointer, and a controller. The controller obtains a physical memory block with high erase count through the hot list, an erase count of the physical memory block, and an overall average erase count of the flash memory device. The controller further finds out a physical memory block which stores static data through managing the bitmap and the source pointer. The controller moves the static data to the physical memory block with high erase count, and releases the physical memory block which stores the static data to avoid the physical memory block with high erase count being worn down increasingly more seriously.

Abstract: A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.