Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.

Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: A multi-threshold voltage semiconductor device and a method for fabricating the device are disclosed, in which a first metal material layer is formed on exposed dielectric layer in a part of gate trenches, and an annealing process is then carried out to cause diffusion of metal ions from the first metal material layer into the corresponding portion(s) of the high-k dielectric layer. In this way, two different threshold voltages can be achieved simply with one photolithography process and one etching process. More different threshold voltages can be achieved by adding photolithography processes. As fewer photolithography and etching processes are involved, the multi-threshold voltage semiconductor device can be fabricated at lower cost and exhibits improved consistency.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: Ingot puller apparatus for producing a doped single crystal silicon ingot are disclosed. The ingot puller apparatus includes a dopant feeder having a first dopant receptacle for holding a first batch of dopant and a second dopant receptacle for holding a second batch of dopant. A rotation mechanism rotates the first dopant receptacle to release the first batch of dopant into the crucible and rotates the second dopant receptacle to release the second batch of dopant into the crucible.

Abstract: Ingot puller apparatus for producing a doped single crystal silicon ingot are disclosed. The ingot puller apparatus includes a dopant feeder having a first dopant receptacle for holding a first batch of dopant and a second dopant receptacle for holding a second batch of dopant. A rotation mechanism rotates the first dopant receptacle to release the first batch of dopant into the crucible and rotates the second dopant receptacle to release the second batch of dopant into the crucible.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: A probe card and a wafer testing assembly thereof are provided. The wafer testing assembly includes a printed circuit board, a space transformer, a plurality of copper pillars and a plurality of strengthening structure units. The printed circuit board includes a bottom surface and a plurality of first contacts arranged on the bottom surface. The space transformer includes a top surface and a plurality of second contacts. The second contacts are arranged on the top surface and corresponding to the first contacts. The copper pillars are respectively arranged between the first contacts and the second contacts. Two ends of each of the copper pillars are respectively electrically connected to the first contacts and the second contacts. The strengthening structure units are arranged on the bottom surface of the printed circuit board and respectively surrounding the copper pillars.

Abstract: A method of producing a single crystal silicon ingot from a silicon melt includes positioning a crucible in an interior of a susceptor assembly defined by a susceptor base and a sidewall, where each of the susceptor base and the sidewall are formed of a carbon-containing material and the susceptor assembly includes a removable sacrifice ring interposed between the susceptor base and the sidewall, adding polycrystalline silicon to the crucible, heating the polycrystalline silicon to cause a silicon melt to form in the crucible, pulling a single crystal silicon ingot from the melt, where silicon carbide (SiC) deposits accumulate on the sacrifice ring during the pulling the single crystal silicon ingot from the melt, and after the pulling the single crystal silicon ingot from the melt, removing the sacrifice ring having the accumulated SiC deposits from the susceptor base.

Abstract: Antibody drug conjugates (ADC's) comprising a drug conjugated to antibody or antigen binding fragments thereof that bind to Globo series antigen disclosed herein, as well as methods of use thereof. Methods of use include, without limitation, cancer therapies and diagnostics. The antibodies of the disclosure can bind to certain cancer cell surfaces. Exemplary targets of the antibodies disclosed herein can include carcinomas, such as sarcoma, skin cancer, leukemia, lymphoma, brain cancer, glioblastoma, lung cancer, breast cancer, oral cancer, head-and-neck cancer, nasopharyngeal cancer, esophagus cancer, stomach cancer, liver cancer, bile duct cancer, gallbladder cancer, bladder cancer, pancreatic cancer, intestinal cancer, colorectal cancer, kidney cancer, cervix cancer, endometrial cancer, ovarian cancer, testical cancer, buccal cancer, oropharyngeal cancer, laryngeal cancer and prostate cancer.

Abstract: The present disclosure discloses a common source transistor apparatus. The common source transistor unit includes a diffusion area, poly-silicon gates and a source/bulk ring. The diffusion area includes source/bulk areas and drain areas. Each of the poly-silicon gates traverses the diffusion areas between one of the source/bulk areas and one of the drain areas and includes a low-voltage gate part, a first high-voltage gate part and a second high-voltage gate part. The low-voltage gate part includes 2N low-voltage poly-silicon gates. Each of the first and the second high-voltage gate parts is disposed at a side of the low-voltage gate part having one of the source/bulk areas disposed therebetween and includes N+1 high-voltage poly-silicon gates. The source/bulk ring surrounds the diffusion and the poly-silicon gates and is coupled to the source/bulk area. An isolation ring surrounds the common source transistor unit. A substrate ring surrounds the isolation ring.

Abstract: Methods for producing single crystal silicon wafers for use in insulated gate bipolar transistors are disclosed. The methods may involve determining the radial profile of a ratio between (i) a growth velocity, v, and (ii) an axial temperature gradient, G for an ingot with relatively low oxygen. Based on the radial v/G profile, a nitrogen concentration which widens the v/G window to produce Perfect Silicon free of COP and gate oxide failures may be selected.

Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Abstract: A transfer-printing method of UV-digital stacked-thickness printing, which comprising following steps of: ink jetting a UV-ink on a carrier with low-adhesive-strength to the carrier to output a color-ink-layer with a mirrored-pattern and fully curing the color-ink-layer through UV-light-irradiation; ink jetting on the color-ink-layer to output a transparent-ink-layer with the same mirrored-pattern processed with gray-scale or binary-conversion, the transparent-ink-layer is divided into a plurality of regions, an inkjet-head ink jets back and forth within one region for multiple times and after ink jets the last time, cures the region through UV-light-irradiation with a low-irradiation-intensity, then the inkjet head moves forward to next region and ink jets back and forth within that region for multiple times; and pressing and transferring the transparent-ink-layer on the carrier onto a workpiece.

Abstract: A defog lens for vehicles includes a lens barrel, a lens, and a hydrophilic layer. The lens barrel has an opening toward an object side. The lens is disposed in the lens barrel and is located at the opening. The hydrophilic layer covers a surface of the lens and includes silicone compounds. Water droplets condensed on the lens could form a sheet film sticking to the surface of the lens and hard to form spherical water droplets, thereby improving the problem that the field of view of the conventional lens is blocked by spherical water droplets, effectively improving the clarity of the image captured by the defog lens, and therefore the defog lens could be applied to various environments.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.