Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: The invention provides a backlight control method for a display system. The display system has a backlight module, and a light-emitting surface of the backlight module is divided into a plurality of light-emitting areas, and each light-emitting area corresponds to at least one light-emitting unit. The backlight control method includes the following steps: receiving an input image data from the display module of the display system; performing a local dimming procedure on the backlight module according to the input image data, wherein the light-emitting unit corresponding to each light-emitting area has a local dimming value; obtaining area peak luminance of each light-emitting area; determining a compensation area peak luminance of each light-emitting area according to a brightness enhancement comparison table and the peak brightness values of the light-emitting areas; and applying each compensation area peak luminance to each corresponding light-emitting area of backlight module.

Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: An apparatus for semiconductor processing is provided. The apparatus includes a housing comprising a plurality of shelves configured to receive a plurality of substrates; a shelter plate disposed over an upper side of the housing and configured to reduce heat loss of an upper substrate of the plurality of substrates; and an airflow structure in the housing and configured to control an air circulation in the housing.

Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: A processing system and method for high-yield dynamic crystallization and processing of a battery material are provided. The processing system may include a feeder assembly, a reaction chamber, a heating assembly, a gas delivery assembly, a gas exhaust assembly, a collection assembly, and a lift mechanism being connected to a support platform and adapted to lift the support platform at an ? angle of more than 0° and no more than 10°. The reaction chamber includes an outer tube made of a stainless-steel material, an inner tube made of a ceramic material, and a chamber housing enclosed by the inner tube. One or more gear assemblies are connected to the outer tube and adapted to rotate the reaction chamber so that the inner tube and the outer tube of the reaction chamber are in a rotational movement around a center axis within the chamber housing of the reaction chamber.

Abstract: Systems and methods for discovering a unique identifier for an integrated development environment editor for receiving a single code base with a same functionality from a plug-in are disclosed herein. Exemplary implementations may include: accessing an integrated development environment's plug-in registry using publicly available tools and publicly available published information; identifying a unique identifier for the integrated development environment's editor using the plug-in registry; adding the unique identifier for the integrated development environment editor to a plug-in; and repeating the process for other integrated development environment editors, allowing functions developed for the integrated development environment editor to be available in the other integrated development environments.

Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: Systems and methods for discovering a unique identifier for an integrated development environment editor for receiving a single code base with a same functionality from a plug-in are disclosed herein. Exemplary implementations may include: accessing an integrated development environment's plug-in registry using publicly available tools and publicly available published information; identifying a unique identifier for the integrated development environment's editor using the plug-in registry; adding the unique identifier for the integrated development environment editor to a plug-in; and repeating the process for other integrated development environment editors, allowing functions developed for the integrated development environment editor to be available in the other integrated development environments.

Abstract: A scanning-type optical antenna is provided, which includes a housing, a fine-tune mirror, a light signal emitter, a light signal receiver, a scanning light receiver and a rotational mechanism. The housing includes a window. The scanning light receiver disposed on the housing receives an input sector scanning light from a target antenna to generate plural light speckles. The rotational mechanism mounts the housing and adjusts the deflection angle between the housing and the target antenna according to the light speckles. The fine-tune mirror is disposed outside the housing and corresponding to the window. The light signal emitter inside the housing transmits an output signal light to the target antenna after being reflected by the fine-tune mirror through the window. The input signal light of the target antenna is transmitted to the light signal receiver inside the housing after being reflected by the fine-tune mirror and passing through the window.

Abstract: A scanning-type optical antenna is provided, which includes a housing, a fine-tune mirror, a light signal emitter, a light signal receiver, a scanning light receiver and a rotational mechanism. The housing includes a window. The scanning light receiver disposed on the housing receives an input sector scanning light from a target antenna to generate plural light speckles. The rotational mechanism mounts the housing and adjusts the deflection angle between the housing and the target antenna according to the light speckles. The fine-tune mirror is disposed outside the housing and corresponding to the window. The light signal emitter inside the housing transmits an output signal light to the target antenna after being reflected by the fine-tune mirror through the window. The input signal light of the target antenna is transmitted to the light signal receiver inside the housing after being reflected by the fine-tune mirror and passing through the window.

Abstract: An optical wireless unit including an optical circulator, a collimator, and a lens is provided. The collimator is configured to receive an optical signal via a first port of the optical circulator. The collimator is coupled with a second port of the optical circulator and is configured to transmit the optical signal into air to form a first free space optical wireless signal. The lens is coupled with the collimator and a third port of the optical circulator and is configured to receive and focus a second free space optical wireless signal to the collimator. The first free space optical wireless signal has a wavelength ?0, the second free space optical wireless signal has a wavelength ?N, and N is a positive integer.

Abstract: An electronic apparatus and an overvoltage protection structure thereof are provided. The overvoltage protection structure includes a first signal transmission end and a second signal transmission end. The first signal transmission end has at least one first side, and couples to a protected component through a conductive wire. The second signal transmission end has at least one second side, wherein the at least one second side corresponds to the at least one first side and is adjacent to the at least one first side. Therein, there is at least one gap between the at least one second side and the at least one first side, and the gap is positively related to a threshold voltage of the overvoltage protection structure.

Abstract: Disclosed herein is novel double-stranded short interfering ribonucleic acid (siRNA) capable of suppressing the translation of Aurora-A mRNA. Also disclosed are use of the novel siRNA as disclosed herein for manufacturing a medicament suitable for treating a cancer, which is mediated through epidermal growth factor receptor (EGFR) signaling. Accordingly, a pharmaceutical composition comprising the disclosed novel siRNA molecules is provided; as well as a method of treating a subject suffering from EGFR-mediated cancer via administering to the subject the disclosed novel siRNA molecule.

Abstract: An electronic apparatus and an overvoltage protection structure thereof are provided. The overvoltage protection structure includes a first signal transmission end and a second signal transmission end. The first signal transmission end has at least one first side, and couples to a protected component through a conductive wire. The second signal transmission end has at least one second side, wherein the at least one second side corresponds to the at least one first side and is adjacent to the at least one first side. Therein, there is at least one gap between the at least one second side and the at least one first side, and the gap is positively related to a threshold voltage of the overvoltage protection structure.

Abstract: A planning method for learning is applied to a planning system for learning, and the planning system for learning includes a monitor, a storage and a processor.

Abstract: The present disclosure provides a planning method for learning applied to a planning system for learning, and the planning system for learning includes a storage, a monitor and a processor. The planning method for learning includes the following steps: recording learning information of a plurality of subjects and storing the learning information in the storage via the monitor; calculating weighting parameters of the subjects according to the learning information and calculating weighting scores of the subjects according to the weighting parameters via the processor; and performing a fuzzy process to the weighting scores via the processor to transform the weighting scores into score levels of the subjects, so as to establish a learning sequence of the subjects to establish a learning plan.

Abstract: Disclosed herein is novel double-stranded short interfering ribonucleic acid (siRNA) capable of suppressing the translation of Aurora-A mRNA. Also disclosed are use of the novel siRNA as disclosed herein for manufacturing a medicament suitable for treating a cancer, which is mediated through epidermal growth factor receptor (EGFR) signaling. Accordingly, a pharmaceutical composition comprising the disclosed novel siRNA molecules is provided; as well as a method of treating a subject suffering from EGFR-mediated cancer via administering to the subject the disclosed novel siRNA molecule.