Abstract: A communications system switching method and a terminal device establish, by the terminal device, a connection to a first communications system, run a first application, obtain a QoS value of a second communications system, determine based on a preset policy and a QoS requirement of the first application, whether the QoS value of the second communications system meets the QOS requirement of the first application. When the QoS value of the second communications system meets the QOS requirement of the first application, the terminal device disconnects from the first communications system and establishes a connection to the second communications system.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A power conversion system with ripple injection includes an AC-DC conversion unit, a voltage regulation unit, at least one DC-DC conversion unit, at least one load, and a first control unit. The voltage regulation unit provides a DC link and receives one portion of an input power as an energy storage power. Each DC-DC conversion unit receives the other portion of the input power as an output power. The at least one load correspondingly receives the output power for being supplied power. The first control unit is coupled to the DC link, the at least one DC-DC conversion unit, and the at least one load. The first control unit controls the at least one DC-DC conversion unit to adjust a magnitude of a ripple of the output power to perform a ripple injection operation according to a magnitude of a ripple of the input power.

Abstract: A method is provided for supporting environmental control in a semiconductor wafer processing space, the method includes: flowing a first gas under pressure in a first direction through a first diffuser tube, thereby generating a first lateral flow of gas through a sidewall of the first diffuser tube; flowing a second gas under pressure in a second direction through a second diffuser tube, thereby generating a second lateral flow of gas through a sidewall of the second diffuser tube, the second direction being opposite the first direction; combining the first and second lateral flows of gas within a housing; and outputting the combined lateral flows of gas from the housing to produce a laminar gas flow covering an opening to the semiconductor wafer processing space.

Abstract: Capacitor cells are provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate directly connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate directly connected to the first node. A second PMOS transistor is coupled between the second node and the power supply, and has a gate directly connected to the second node. A second NMOS transistor is coupled between the first node and the ground, and has a gate directly connected to the first node. Sources of the first and second NMOS transistors share an N+ doped region in the P-type well region. The first NMOS transistor is disposed between the second NMOS transistor and the first and second PMOS transistors. Source of the first PMOS transistor is directly connected to the power supply.

Abstract: A method of forming a semiconductor device includes providing a precursor. The precursor includes a substrate; a gate stack over the substrate; a first dielectric layer over the gate stack; a gate spacer on sidewalls of the gate stack and on sidewalls of the first dielectric layer; and source and drain (S/D) contacts on opposing sides of the gate stack. The method further includes recessing the gate spacer to at least partially expose the sidewalls of the first dielectric layer but not to expose the sidewalls of the gate stack. The method further includes forming a spacer protection layer over the gate spacer, the first dielectric layer, and the S/D contacts.

Abstract: A method for image alignment is provided. The method for image alignment includes the following stages. A first image with a first property from a first sensor is received. A second image with a second property from a second sensor is received. The first property is similar to the second property. The first feature correspondence between the first image and the second image is calculated. A third image with a third property from the first sensor and a fourth image with a fourth property from the second image sensor are received. The third property is different from the fourth property. Image alignment is performed on the third image and the fourth image based on the first feature correspondence between the first image and the second image.

Abstract: A memory device is provided, including at least one inverter, a transistor coupled between the at least one inverter and a bit line, and an assist circuit coupled to the bit line, configured to provide a negative voltage to the bit line, and configured to pull down a power supply voltage provided to the at least one inverter.

Abstract: Semiconductor devices and methods of manufacturing are provided. In some embodiments the method includes depositing an etch stop layer over a first hard mask material, the first hard mask material over a gate stack, depositing an interlayer dielectric over the etch stop layer, forming a first opening through the interlayer dielectric, the etch stop layer, and the first hard mask material, the first opening exposing a conductive portion of the gate stack, and treating sidewalls of the first opening with a first dopant to form a first treated region within the interlayer dielectric, a second treated region within the etch stop layer, a third treated region within the first hard mask material, and a fourth treated region within the conductive portion, wherein after the treating the fourth treated region has a higher concentration of the first dopant than the first treated region.

Abstract: A friction stir welding method with automatic adjustment of feed rate involves using a friction stir welding tool assembly to perform a friction stir welding process on two workpieces and the friction stir welding process includes using the friction stir welding tool assembly to perform friction stirring on the two workpieces along a welding path. The friction stir welding method is characterized in that during the friction stir welding process, the real-time feed rate of the friction stir welding tool assembly is determined by the following equation: FR p = FR o × ( 1 + ( D L × ? ) ) .

Abstract: A two-piece tool includes a female tool member, a stirring tool member and a bolt. The female tool member has a friction-generating shoulder for generating friction with two workpieces, an axial through hole and a radial threaded hole. The axial through hole is extended through a center of the friction-generating shoulder along a central axis of the female tool member. The radial threaded hole is extended in a radial direction of the female tool member and is in communication with the axial through hole. The stirring tool member has a fixed section and a stirring section. The fixed section is inserted in the axial through hole. The stirring section is extended from the friction-generating shoulder in a direction pointing away from the axial through hole. The bolt is threaded in the radial threaded hole to abut against the fixed section.

Abstract: A friction stir welding tool assembly includes a female tool member, a stirring tool member, a temperature-sensing probe and a bolt. The female tool member has a friction-generating shoulder for generating friction with two workpieces, an axial through hole and a radial threaded hole. The stirring tool member has a fixed section and a stirring section. The fixed section is inserted in the axial through hole. The stirring section is extended from the friction-generating shoulder in a direction pointing away from the axial through hole. The stirring section is adapted to be driven into a gap between the two workpieces for stirring. The temperature-sensing probe is adapted to contact and sense a working temperature of the stirring tool member. The bolt is threaded in the radial threaded hole to abut against the fixed section.

Abstract: A multi-axis servo control system includes a plurality of motors and a plurality of drive control apparatuses. The drive control apparatuses are connected to each other through an external field bus. Each drive control apparatus includes a control unit and a plurality of drive units. The drive units are connected to the control unit in series by a plurality of local buses to form a series-connected communication loop of sequentially transmitting data. Each drive unit controls at least one of the motors. The control unit receives multi-axis position commands through the external field bus, and the drive units correspondingly receive multi-axis commands through the local buses so as to control the motors in a decentralization manner.

Abstract: An androgen receptor (AR) binding molecule has the structure of Formula (I) shown in the following: wherein E is CH2, G is CH, is OH, NH2, OTf or C?C, X is CF3 or trifluoromethylphenyl, is a single bond, and Y and Z are CH2; or is absent, X is CF3, is a double bond, and Y and Z are CH.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A device structure includes a voltage regulator circuit, which includes: a first semiconductor die including a pulse width modulation (PWM) circuit and connected to a PWM voltage output node at which a pulsed voltage output is generated; and a series connection of an inductor and a parallel connection circuit, the parallel connection circuit including a parallel connection of capacitor-switch assemblies. A first end node of the series connection is connected to the PWM voltage output node; a second end node of the series connection is connected to electrical ground; each of the capacitor-switch assemblies includes a respective series connection of a respective capacitor and a respective switch; and each switch within the capacitor-switch assemblies is located within the first semiconductor die.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.

Abstract: An electronic device, including a metal back cover, a ground radiator, a third radiator, and a metal frame including a first cutting opening, a second cutting opening, a first radiator located between the first cutting opening and the second cutting opening, and a second radiator located beside the second cutting opening and separated from the first radiator by the second cutting opening, is provided. An end of a first slot formed between the metal back cover and a first part of the first radiator is communicated with the first cutting opening, and a second slot formed between the metal back cover and a second part of the first radiator and between the metal back cover and the second radiator is communicated with the second cutting opening. The ground radiator connects the metal back cover and the first radiator and separates the first slot from the second slot.

Abstract: An electronic device including an active region and a peripheral region, and includes a substrate including a first edge; a first electrode layer disposed on the substrate; a first conductive glue disposed on the substrate and in the peripheral region; a second conductive glue disposed on the substrate and in the peripheral region; an insulating glue disposed in the peripheral region and overlapped with the first conductive glue and the second conductive glue; and a first metal element fixed on the first electrode layer through the first conductive glue and the insulating glue; wherein in a top view, the insulating glue extends along an extension direction parallel to the first edge, and along the extension direction, a sum of lengths of the first conductive glue and the second conductive glue is less than a length of the insulating glue.