Patents by Inventor Chien-Wei Li
Chien-Wei Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250062139Abstract: Embodiments of the present disclosure provide a furnace for semiconductor processing that includes an inner tube defining a reaction chamber and including a sidewall defined along a longitudinal axis of the inner tube and including one or more slits defined through the sidewall in a radial direction with respect to the longitudinal axis. The one or more slits include at least one of a first slit with a width in a range between 10 mm and 100 mm, or a plurality of separate slits with a total number in a range between 2 and 15. The inner tube includes a closed end substantially enclosing the reaction chamber and an open end opposite the closed end with respect to the longitudinal axis. The reaction chamber is configured to be loaded with one or more semiconductor wafers via the open end.Type: ApplicationFiled: August 17, 2023Publication date: February 20, 2025Inventors: De-Wei YU, Chien-Chia CHENG, Ming-Hua YU, Hsueh-Chang SUNG, Chii-Horng LI
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Publication number: 20250054810Abstract: A semiconductor structure includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and including a conductive interconnect; and a cap layer disposed on the interconnect structure. The cap layer includes a cap portion disposed on the conductive interconnect. The cap portion includes a plurality of two-dimensional material sheets stacked on each other and has a lower surface proximate to the conductive interconnect. The lower surface of the cap portion is formed with a plurality of dangling bonds such that the cap portion is adhered to the conductive interconnect through the dangling bonds.Type: ApplicationFiled: August 10, 2023Publication date: February 13, 2025Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shu-Wei LI, Hans HSU, Chien-Hsin HO, Yu-Chen CHAN, Blanka MAGYARI-KOPE, Shin-Yi YANG, Ming-Han LEE
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Publication number: 20230195519Abstract: One embodiment provides an apparatus comprising a graphics processor device including a first compute engine and a second compute engine, wherein the second compute engine includes a subset of the functionality provided by the first compute engine and a lower power consumption relative to the first compute engine.Type: ApplicationFiled: December 22, 2021Publication date: June 22, 2023Applicant: Intel CorporationInventors: Vidhya Krishnan, Chien-Wei Li, Ben J. Ashbaugh, Durgaprasad Bilagi, Pattabhiraman K
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Publication number: 20110198756Abstract: Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC?, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C? comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C? further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.Type: ApplicationFiled: August 25, 2006Publication date: August 18, 2011Inventors: ü Thenappan, Chien-Wei Li, David Nalewajek, Martin Cheney, Jingyu Lao, Eric Eisenbraun, Min Li, Nathaniel Berliner, Mikko Ritala, Markku Leskela, kaupo Kukli, Linda Cheney
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Patent number: 7638178Abstract: A protective coating for a component comprising a ceramic based substrate, and methods for protecting the component, the protective coating adapted for withstanding repeated thermal cycling. The substrate may comprise silicon nitride or silicon carbide, and the protective coating may comprise at least one tantalate of scandium, yttrium, or a rare earth element. The protective coating may further comprise one or more metal oxides. The coating protects the substrate from combustion gases in the high temperature turbine engine environment. The coating may be multi-layered and exhibits strong bonding to Si-based substrate materials and composites.Type: GrantFiled: November 5, 2004Date of Patent: December 29, 2009Assignee: Honeywell International Inc.Inventors: Derek Raybould, Chien-Wei Li, Bjoern Schenk, Thomas E. Strangman
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Patent number: 7572313Abstract: A turbomachinery component includes a substrate having a surface, the surface consisting essentially of at least one composite of at least one metal and at least one compound having the chemical formula Mn+1AXn, wherein M is at least one early transition metal selected from groups IIIB, IVB, VB, and VIB, A is at least one element selected from groups IIIA, IVA, VA, VIA, and VIIA, X is one or both of carbon and nitrogen, and n is an integer between 1 and 3. The component is made by compressing a powdered material to form a substrate that consists essentially of the composite and sintering the substrate, or by coating a substrate with the composite.Type: GrantFiled: May 10, 2005Date of Patent: August 11, 2009Assignee: Drexel UniversityInventors: Thirumalai G. Palanisamy, Surojit Gupta, Michel Barsoum, Chien-Wei Li
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Patent number: 7553564Abstract: A turbomachinery component includes a substrate having a surface, the surface being a material consisting essentially of at least one compound having the chemical formula Mn+1AXn, wherein M is at least one early transition metal selected from groups IIIB, IVB, VB, and VIB, A is at least one element selected from groups IIIA, IVA, VA, VIA, and VIIA, X is one or both of carbon and nitrogen, and n is an integer between 1 and 3. The component is made by forming a compact and sintered substrate with the material, or by coating a substrate with the material.Type: GrantFiled: May 10, 2005Date of Patent: June 30, 2009Assignee: Honeywell International Inc.Inventors: Surojit Gupta, Thirumalai G. Palanisamy, Michel Barsoum, Chien-Wei Li
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Publication number: 20090098346Abstract: A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substrate and a bonding coat; and aluminum oxide (Al2O3) layer may be deposited on top of an yttria-stabilized zirconia layer and form a bonding coat by atomic layer deposition. The yttria-stabilized zirconia layer may have a plurality of micron sized gaps extending from the top surface of the ceramic coating towards the substrate and defining a plurality of columns of the yttria-stabilized zirconia layer. Also, atomic layer deposition may be used to lay an aluminum oxide (Al2O3) layer over a tantalum oxide (Ta2O5) layer on a silicon-based substrate.Type: ApplicationFiled: October 23, 2007Publication date: April 16, 2009Applicant: HONEYWELL INTERNATIONAL, INC.Inventor: Chien-Wei Li
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Publication number: 20080237702Abstract: An LDMOS transistor includes a substrate having first conductive type, a first well having second conductive type, an isolation structure disposed on the substrate, and a deep doped region having first conductive type disposed between the first well and the substrate. The deep doped region is heavily doped, a portion of the deep doped region is disposed in the bottom portion of the first well, and the other portion of the deep doped region is disposed in the substrate.Type: ApplicationFiled: March 26, 2007Publication date: October 2, 2008Inventors: Chih-Hua Lee, Chien-Wei Li
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Publication number: 20080119098Abstract: A method for depositing an encapsulation layer onto a surface of polymeric fibers and ballistic resistant fabrics. More particularly, the atomic layer deposition of materials onto non-semiconductive polymeric fibers and fabrics, and to fabrics having an conformal encapsulation layer that has been applied by atomic layer deposition.Type: ApplicationFiled: November 21, 2006Publication date: May 22, 2008Inventors: Igor Palley, Chien-Wei Li, Ashok Bhatnagar, David A. Hurst, Jingyu Lao
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Publication number: 20080038578Abstract: A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substrate and a bonding coat; and aluminum oxide (Al2O3) layer may be deposited on top of an yttria-stabilized zirconia layer and form a bonding coat by atomic layer deposition. The yttria-stabilized zirconia layer may have a plurality of micron sized gaps extending from the top surface of the ceramic coating towards the substrate and defining a plurality of columns of the yttria-stabilized zirconia layer. Also, atomic layer deposition may be used to lay an aluminum oxide (Al2O3) layer over a tantalum oxide (Ta2O5) layer on a silicon-based substrate.Type: ApplicationFiled: October 23, 2007Publication date: February 14, 2008Applicant: HONEYWELL INTERNATIONAL, INC.Inventor: Chien-Wei Li
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Patent number: 7323247Abstract: A protective barrier coating system including a diffusion barrier coating and an oxidation barrier coating and method for use in protecting silicon-based ceramic turbine engine components. A complete barrier coating system includes a thermal barrier coating of stabilized zirconia and an environmental barrier coating of an alloyed tantalum oxide. The oxidation barrier coating includes a layer of metallic silicates formed on a substrate of silicon nitride or silicon carbide to be protected. The oxidation barrier coating can include silicates of scandium, ytterbia or yttrium. The oxidation barrier coating may also include an inner layer of Si2ON2 between the diffusion barrier and the metallic silicate layer. The oxidation barrier coating can be applied to the substrate by spraying, slurry dipping and sintering, by a sol-gel process followed by sintering, by plasma spray, or by electron beam-physical vapor deposition.Type: GrantFiled: November 21, 2003Date of Patent: January 29, 2008Assignee: Honeywell International, Inc.Inventors: Derek Raybould, Chien-Wei Li, Bjoern Schenk, Thomas E. Strangman, Paul Chipko, Lee Poandl
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Publication number: 20080004170Abstract: Sintered silicon nitride products comprising predominantly ?-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500° C. Methods for preparing sintered silicon nitride products are also disclosed.Type: ApplicationFiled: August 30, 2005Publication date: January 3, 2008Inventors: James Guiheen, Bjoern Schenk, Chien-Wei Li, Eric Passman
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Patent number: 7300702Abstract: A component comprising a silicon-based substrate and a diffusion barrier coating disposed on the silicon-based substrate. The diffusion barrier coating comprises an isolation layer disposed directly on the silicon-based substrate and at least one oxygen barrier layer disposed on the isolation layer. The oxygen barrier layer prevents the diffusion of oxygen therethrough, and prevents excessive oxidation of the silicon-based substrate. The isolation layer(s) prevent contaminants and impurities from reacting with the oxygen barrier layer. An environmental barrier coating may be disposed on the diffusion barrier coating, and a thermal barrier coating may be disposed on the environmental barrier coating. Methods for making a component having a diffusion barrier coating are also disclosed.Type: GrantFiled: August 18, 2003Date of Patent: November 27, 2007Assignee: Honeywell International, Inc.Inventors: Chien-Wei Li, Derek Raybould, Thomas E. Strangman, Bjoern Schenk
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Patent number: 7285312Abstract: A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substrate and a bonding coat; and aluminum oxide (Al2O3) layer may be deposited on top of an yttria-stabilized zirconia layer and form a bonding coat by atomic layer deposition. The yttria-stabilized zirconia layer may have a plurality of micron sized gaps extending from the top surface of the ceramic coating towards the substrate and defining a plurality of columns of the yttria-stabilized zirconia layer. Also, atomic layer deposition may be used to lay an aluminum oxide (Al2O3) layer over a tantalum oxide (Ta2O5) layer on a silicon-based substrate.Type: GrantFiled: January 16, 2004Date of Patent: October 23, 2007Assignee: Honeywell International, Inc.Inventor: Chien-Wei Li
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Patent number: 7115319Abstract: A component comprising a silicon-based substrate and a braze-based protective coating disposed on the silicon-based substrate. The braze-based coating comprises a brazed layer, wherein the brazed layer comprises at least one intermetallic compound. A scale layer may be formed on the brazed layer. An environmental barrier coating may be disposed directly on the brazed layer or directly on the scale layer. A thermal barrier coating may be disposed on the environmental barrier coating. Methods for making a Si-based component having a braze-based protective coating are also disclosed.Type: GrantFiled: October 8, 2003Date of Patent: October 3, 2006Assignee: Honeywell International, Inc.Inventors: Derek Raybould, Chien-Wei Li, Thomas E. Strangman, Bjoern Schenk
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Patent number: 7100022Abstract: In one embodiment, move buses utilized in presently known VLIW processors are eliminated and replaced with a busing scheme which results in transfer of operands from each register file bank to any data path block while also reducing the total bus width and total power consumption associated with transport of operands from register file banks to data path blocks. According to this busing scheme, the speed of VLIW processor is also improved since the need for one clock cycle to move operands from one register file bank to another is overcome. In another embodiment, a scheduling restriction is used to eliminate the need for the presently required write back buses used by various data path blocks. In yet another embodiment, a scheduling restriction is imposed which results in a reduction of the number of ports, a reduction in the width of buses, and a reduction of power consumption.Type: GrantFiled: February 28, 2002Date of Patent: August 29, 2006Assignee: Mindspeed Technologies, Inc.Inventors: Moataz Mohamed, John Spence, Kevin R. Bowles, Chien-Wei Li
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Publication number: 20060099358Abstract: A protective coating for a component comprising a ceramic based substrate, and methods for protecting the component, the protective coating adapted for withstanding repeated thermal cycling. The substrate may comprise silicon nitride or silicon carbide, and the protective coating may comprise at least one tantalate of scandium, yttrium, or a rare earth element. The protective coating may further comprise one or more metal oxides. The coating protects the substrate from combustion gases in the high temperature turbine engine environment. The coating may be multi-layered and exhibits strong bonding to Si-based substrate materials and composites.Type: ApplicationFiled: November 5, 2004Publication date: May 11, 2006Applicant: Honeywell International Inc.Inventors: Derek Raybould, Chien-Wei Li, Bjoern Schenk, Thomas Strangman
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Publication number: 20060088435Abstract: A turbomachinery component includes a substrate having a surface, the surface being a material consisting essentially of at least one compound having the chemical formula Mn+1AXn, wherein M is at least one early transition metal selected from groups IIIB, IVB, VB, and VIB, A is at least one element selected from groups IIIA, IVA, VA, VIA, and VIIA, X is one or both of carbon and nitrogen, and n is an integer between 1 and 3. The component is made by forming a compact and sintered substrate with the material, or by coating a substrate with the material.Type: ApplicationFiled: May 10, 2005Publication date: April 27, 2006Inventors: Surojit Gupta, Thirumalai Palanisamy, Michel Barsoum, Chien-Wei Li
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Patent number: 6977233Abstract: Sintered silicon nitride products comprising predominantly ?-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500° C. Methods for preparing sintered silicon nitride products are also disclosed.Type: GrantFiled: July 15, 2003Date of Patent: December 20, 2005Assignee: Honeywell International, Inc.Inventors: Chien-Wei Li, Bjoern Schenk, James V. Guiheen