Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A data retransmission method includes configuring the quantity of code block groups in a transport block and configuring a plurality of physical resource groups; configuring the quantity of physical resources included in each of the physical resource groups according to the different quantities of code block groups; selecting the physical resources included in the physical resource group that corresponds to the initial transmission to send the transport block; determining the quantity of code block groups that were erroneously sent in the transport block according to the response; selecting one of the physical resources in one of the physical resource groups that corresponds to the retransmission to send at least one code block group that was erroneously sent according to the quantity of code block groups that were erroneously sent; and completing the retransmission only after all of the code block groups in the transport block have been successfully sent.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Abstract: A method of manufacturing MOS transistor includes providing a substrate having a gate formed thereon; forming a hard mask layer on the substrate, performing an acid treatment to a surface of the hard mask layer, forming a photoresist layer on the hard mask layer after performing the acid treatment, performing a photolithography process to pattern the photoresist layer and the hard mask layer, performing an etching process to form recesses in the substrate, and performing a SEG method to form epitaxial layers respectively in the recesses.

Abstract: A supporting structure for use in a keyswitch and the keyswitch are provided. The keyswitch comprises a keycap, a base and the supporting structure. The supporting structure comprises two supporting arms and two latch sets, wherein the two supporting arms intersect based on a virtual axis and are disposed between the keycap and the base. Each of the latch sets is correspondingly disposed on two opposite ends of each of the supporting arms. The two supporting arms are adapted to be detachably connected with each latch set and perform an arc motion with respect to the virtual axis, therefore, moving the keycap upwards and downwards above the base.