Abstract: An optical communication system includes an optical module and a host. The optical module has a fiber connector and a laser condition pin, wherein the fiber connector is configured to connect to a laser output of an external laser source. The optical module is configured to set an output of the laser condition pin to have a first value when detecting a laser beam through the fiber connector. The host is connected to the laser condition pin and has a control connector, wherein the control connector is configured to connect to the external laser source. The host is configured to output a release signal through the control connector when detecting the first value on the laser condition pin, wherein the release signal changes the laser output from outputting a laser beam having a first power to outputting a laser beam having a second power higher than the first power.

Abstract: An optical communication system includes an optical module and a host. The optical module has a fiber connector and a laser condition pin, wherein the fiber connector is configured to connect to a laser output of an external laser source. The optical module is configured to set an output of the laser condition pin to have a first value when detecting a laser beam through the fiber connector. The host is connected to the laser condition pin and has a control connector, wherein the control connector is configured to connect to the external laser source. The host is configured to output a release signal through the control connector when detecting the first value on the laser condition pin, wherein the release signal changes the laser output from outputting a laser beam having a first power to outputting a laser beam having a second power higher than the first power.

Abstract: A physical analysis method, a sample for physical analysis and a preparing method thereof are provided. The preparing method of the sample for physical analysis includes: providing a sample to be inspected; and forming a contrast enhancement layer on a surface of the sample to be inspected. The contrast enhancement layer includes a plurality of first material layers and a plurality of second material layers stacked upon one another. The first material layer and the second material layer are made of different materials. Each one of the first and second material layers has a thickness that does not exceed 0.1 nm. In an image captured by an electron microscope, a difference between an average grayscale value of a surface layer image of the sample to be inspected and an average grayscale value of an image of the contrast enhancement layer is at least 50.

Abstract: A magnetic valve and a fluid supply system using the same are provided. The fluid supply system includes a flow channel and the magnetic valve. The magnetic valve penetrates through a pipe wall of the flow channel, and includes a driving unit, a first magnet and a second magnet, a cover plate, a first and second spools. A first leaning portion of the first spool is disposed at one end of a first sheath portion. The first sheath portion has a first outlet opening. The second magnet is disposed on a surface of the first leaning portion facing to the cover plate. The second spool sleeves the first spool and has a second outlet opening. The first spool rotates relative to the second spool through a magnetic force to control an overlapping area of the first and second outlet openings, so as to control a flow rate.

Abstract: A method is provided for bridging an input signal from a human interface device between a computer and a mobile device. The computer has a bridging device pluggably coupled thereto. The method includes: executing a bridging application program to configure the computer to serve as a wireless human interface device for the mobile device; in response to generation of an input signal as a result of operation of the human interface device of the computer, transmitting the input signal to the bridging device; in response to receipt of the input signal, transmitting the input signal to the mobile device; and receiving the input signal to serve as an input to an input-requiring application executed by the mobile device.

Abstract: A locating device is for locating a pointing device. The pointing device is configured to capture a plurality of images, to measure an angular rate of the pointing device, and to generate and output current coordinate data associated with an orientation of the pointing device when at least one of the images contains infrared light from a light source module. The locating device is configured to receive the current coordinate data and the angular rate from the pointing device, to generate a cursor signal based on one of the current coordinate data and the angular rate, and to transmit the cursor signal to a computing device, which is configured to move a cursor on a display unit, according to the cursor signal.

Abstract: A locating device is for locating a pointing device. The pointing device is configured to capture a plurality of images, to measure an angular rate of the pointing device, and to generate and output current coordinate data associated with an orientation of the pointing device when at least one of the images contains infrared light from a light source module. The locating device is configured to receive the current coordinate data and the angular rate from the pointing device, to generate a cursor signal based on one of the current coordinate data and the angular rate, and to transmit the cursor signal to a computing device, which is configured to move a cursor on a display unit, according to the cursor signal.

Abstract: A magnetic valve and a fluid supply system using the same are provided. The fluid supply system includes a flow channel and the magnetic valve. The magnetic valve penetrates through a pipe wall of the flow channel, and includes a driving unit, a first magnet and a second magnet, a cover plate, a first and second spools. A first leaning portion of the first spool is disposed at one end of a first sheath portion. The first sheath portion has a first outlet opening. The second magnet is disposed on a surface of the first leaning portion facing to the cover plate. The second spool sleeves the first spool and has a second outlet opening. The first spool rotates relative to the second spool through a magnetic force to control an overlapping area of the first and second outlet openings, so as to control a flow rate.

Abstract: A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: A method of fabricating of a metal line by a wet process is provided. A catalytic adhesive layer is formed on an insulating substrate. A fist metal layer is formed by an electoless plating process, and then, a second metal layer is formed by an electoless plating process or an electoplating process. The first and the second metal layers are patterned to form a metal line.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.