Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: The present invention provides an inverter circuit with a power factor corrector. A power source provides a power signal of alternating current. An electromagnetic interference filtering unit and a rectifier unit receive the power signal of alternating current, filter and rectify the power signals, and then output a full-wave/half-wave power signal of direct current. A voltage adjusting unit provides a voltage adjusting value. A first power factor corrector receives the full-wave/half-wave power signal of direct current, connected to the voltage adjusting unit, converting the voltage of the full-wave/half-wave power signal of direct current in accordance with the voltage adjusting value, and then outputting a power signal. An inverter steps up the voltage and outputting a power signal with high voltage to a load which is subsequently connected to the inverter, such that the power signal with high voltage has a preferred corrected power factor.