Patents by Inventor Chien-Wen Hsiao
Chien-Wen Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948999Abstract: A device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The first semiconductor fin and the second semiconductor fin are over a substrate. The source/drain epitaxial structure is connected to the first semiconductor fin and the second semiconductor fin. The source/drain epitaxial structure includes a first protruding portion and a second protruding portion aligned with the first semiconductor fin and the second semiconductor fin, respectively. The semiconductive cap is on and in contact with the first protruding portion and the second protruding portion. A top surface of the semiconductive cap is lower than a top surface of the first protruding portion of the source/drain epitaxial structure. The contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.Type: GrantFiled: July 26, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Heng-Wen Ting, Jung-Chi Tai, Lilly Su, Yang-Tai Hsiao
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Publication number: 20240087896Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Chih-Min HSIAO, Chien-Wen LAI, Ru-Gun LIU, Chih-Ming LAI, Shih-Ming CHANG, Yung-Sung YEN, Yu-Chen CHANG
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Patent number: 11090696Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.Type: GrantFiled: November 25, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
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Publication number: 20200094298Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.Type: ApplicationFiled: November 25, 2019Publication date: March 26, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan CHANG, Shao-Yen KU, Wen-Chang TSAI, Shang-Yuan YU, Chien-Wen HSIAO, Fan-Yi HSU
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Patent number: 10510527Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4 to the SPM cleaning unit via a feedback conduit.Type: GrantFiled: February 1, 2013Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang
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Patent number: 10486204Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.Type: GrantFiled: November 6, 2014Date of Patent: November 26, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
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Patent number: 9349617Abstract: Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.Type: GrantFiled: November 22, 2013Date of Patent: May 24, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Yuan Yu, Shao-Yen Ku, Chien-Wen Hsiao, Hong-Jie Xu, Jui-Chuan Chang, Wen-Chang Tsai
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Publication number: 20160129484Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.Type: ApplicationFiled: November 6, 2014Publication date: May 12, 2016Inventors: Jui-Chuan CHANG, Shao-Yen KU, Wen-Chang TSAI, Shang-Yuan YU, Chien-Wen HSIAO, Fan-Yi HSU
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Publication number: 20150144159Abstract: Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.Type: ApplicationFiled: November 22, 2013Publication date: May 28, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Yuan YU, Shao-Yen KU, Chien-Wen HSIAO, Hong-Jie XU, Jui-Chuan CHANG, Wen-Chang TSAI
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Publication number: 20140216500Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4to the SPM cleaning unit via a feedback conduit.Type: ApplicationFiled: February 1, 2013Publication date: August 7, 2014Applicant: Taiwan Semicunductor Manufacturing Co., Ltd.Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang