Abstract: A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 ?m.

Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.