Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first

Abstract: A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 ?m.

Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.