Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a

Abstract: A package structure includes a first die and a second die embedded in a first molding material, a first redistribution structure over the first die and the second die, a second molding material over portions of the first die and the second die, wherein the second molding material is disposed between a first portion of the first redistribution structure and a second portion of the first redistribution structure, a first via extending through the second molding material, wherein the first via is electrically connected to the first die, a second via extending through the second molding material, wherein the second via is electrically connected to the second die and a silicon bridge electrically coupled to the first via and the second via.

Abstract: A method includes bonding a first package component over a second package component. The second package component includes a plurality of dielectric layers, and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes dispensing a stress absorber on the second package component, curing the stress absorber, and forming an encapsulant on the second package component and the stress absorber.

Abstract: An electronic package of which the manufacturing method is to dispose an electronic element on a circuit portion, encapsulate the electronic element with an Ajinomoto build-up film (ABF) used as an encapsulating layer, form a wiring layer on the encapsulating layer, and form a conductive via in the encapsulating layer. Therefore, the wiring layer can be well bonded onto the encapsulating layer as the ABF material is used as the encapsulating layer.

Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.

Abstract: A buck converter includes a first transistor, a second transistor, a filter circuit, a capacitor and a switch. The first transistor has a drain for receiving a first DC voltage, a gate for receiving a first control signal, and a source coupled to a node. The second transistor has a drain coupled to the node, a gate for receiving a second control signal, and a source coupled to a constant voltage. The filter circuit is electrically coupled to the node for outputting a second DC voltage. The switch has a first terminal electrically coupled to the gate of the second transistor via the capacitor, a second terminal electrically coupled to the source of the second transistor, and a control terminal for receiving the first control signal. The switch has a faster switching speed than the first transistor.

Abstract: A buck converter includes a first transistor, a second transistor, a filter circuit, a capacitor and a switch. The first transistor has a drain for receiving a first DC voltage, a gate for receiving a first control signal, and a source coupled to a node. The second transistor has a drain coupled to the node, a gate for receiving a second control signal, and a source coupled to a constant voltage. The filter circuit is electrically coupled to the node for outputting a second DC voltage. The switch has a first terminal electrically coupled to the gate of the second transistor via the capacitor, a second terminal electrically coupled to the source of the second transistor, and a control terminal for receiving the first control signal. The switch has a faster switching speed than the first transistor.