Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.

Abstract: Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.

Abstract: In some implementations, a semiconductor wafer includes a plurality of optical emitters, wherein an optical emitter, of the plurality of optical emitters, is associated with a receiver conducting medium for receiving wireless power transfer, wherein the receiver conducting medium is configured to couple to a wireless power transfer component for wireless power transfer at a common resonant frequency, and wherein the receiver conducting medium is configured to power the optical emitter to provide an optical output when the wireless power transfer is applied at the common resonant frequency.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

Abstract: A vertical cavity surface emitting laser (VCSEL) may include a top contact, wherein the top contact is associated with a particular shape, and wherein the particular shape is a toothed shape with a particular quantity of teeth. The VCSEL may include at least one implanted region. The VCSEL may include at least one top contact segment.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

Abstract: A vertical cavity surface emitting laser (VCSEL) may include a top contact, wherein the top contact is associated with a particular shape, and wherein the particular shape is a toothed shape with a particular quantity of teeth. The VCSEL may include at least one implanted region. The VCSEL may include at least one top contact segment.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.