Abstract: A pixel structure is provided. A scan line is disposed on a substrate and a gate insulating layer is disposed thereon. A semiconductor layer is disposed on the gate insulating layer and a data line, a source electrode and a drain electrode are disposed thereon. The source electrode and the drain electrode are located above the scan line. The source electrode is connected to the data line. A semiconductor layer exposed by the source electrode and the drain electrode is a channel region. The source electrode protrudes from the channel region along the length direction of the channel region. A passivation layer covers the substrate. A pixel electrode is disposed on the passivation layer and electrically connected to the drain electrode via a contact opening of the passivation layer.