Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.

Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.

Abstract: The description relates to devices and air cooling of devices. One example can include a heat generating component positioned in a housing and a temperature-based gas separation assembly configured to receive ambient air and to separate the ambient air into warmer air that is directed outside the housing and cooler air that is directed inside the housing to cool the heat generating component.

Abstract: The description relates to devices and air cooling of devices. One example can include a heat generating component positioned in a housing and a temperature-based gas separation assembly configured to receive ambient air and to separate the ambient air into warmer air that is directed outside the housing and cooler air that is directed inside the housing to cool the heat generating component.

Abstract: Examples of forming metal composites are described herein. In an example, a metal sheet is formed into a predetermined shape using superplastic thermal forming technique. Further, a carbon fiber-reinforced polymer sheet is shaped into the predetermined shape by thermal forming. The metal sheet and the carbon fiber-reinforced polymer sheet are coupled by applying an adhesive between the metal sheet and the carbon fiber-reinforced polymer sheet, to form a metal composite.

Abstract: Examples of forming metal composites are described herein. In an example, a metal sheet is formed into a predetermined shape using superplastic thermal forming technique. Further, a carbon fiber-reinforced polymer sheet is shaped into the predetermined shape by thermal forming. The metal sheet and the carbon fiber-reinforced polymer sheet are coupled by applying an adhesive between the metal sheet and the carbon fiber-reinforced polymer sheet, to form a metal composite.

Abstract: An assembled configuration of cooling fins and heat pipes facilitates filling of a thermal interface material between contact surfaces of the cooling fins and the heat pipes and enhances stability of the cooling fins. The configuration is characterized in that each of the juxtaposed cooling fins is formed at an end thereof contacting the heat pipes with a bent portion having at least two sections so as to define an accommodating space for the thermal interface material and an extending section, wherein the accommodating space can be sufficiently filled with the thermal interface material and the extending section can be nestingly overlapped by an adjacent cooling fin, so as to effectively prevent the thermal interface material from leaking out and enhance stability of the assembled cooling fins.

Abstract: A heatsink clamper includes a buckle piece and a main body. The buckle piece includes a latch member buckled to a side of a seat that mounts the heatsink and the hot element of an electronic device, and a press member one end pivoted on an end of the latch member and another end includes a latch end correspondent to the latch portion of the latch member. The latch member includes a latch portion and a raised end. The main body includes a buckle latched to another side of the seat, and a pressing arm linked together included a hole correspondent to the raised end for passing through the raised end and moving relatively. When pressing the press member to move the latch end into the latch portion, the pressing arm is also pressed and deformed to provide a pressure to the heatsink through a receptacle groove.